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    1N3838 Search Results

    1N3838 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N3838 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3838 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3838 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3838 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N3838 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF

    1N3838 Datasheets Context Search

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    shockley diode

    Abstract: No abstract text available
    Text: 1N3838 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) V(R) Max. (V)60 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m


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    PDF 1N3838 Current15m StyleDO-204AA NumberTY00200003 shockley diode

    1N5411

    Abstract: 1N5760 DIODE GE 103717 1N5758 1N5761 germanium motorola 2n491 1N5759 Hitron
    Text: PART NUMBER INDEX Part Number Manufacturer 1N3299 AmerMicroSC Mcrwv Diode 1N3300 AmerMicroSC Mcrwv Diode 1N3300A AmerMicroSC 1N3301 Mcrwv Diode 1N3301 A 1N3302 Mcrwv Diode 1N3302A 1N3303 CrimsonSemi 1N3303A Mcrwv Diode 1N3304 AmerMicroSC Mcrwv Diode 1N3304A


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    PDF 1N3299 1N3300 1N3300A 1N3301 1N3302 1N3302A 1N3303 1N3303A 1N3304 1N5411 1N5760 DIODE GE 103717 1N5758 1N5761 germanium motorola 2n491 1N5759 Hitron

    shockley diode application

    Abstract: shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite
    Text: CATALOG OF SHOCKLEY 4-LAYER DIODES L L E V IT E SHOCKLEY 10O1 RAGE M IL L TRANSISTOR ROAD ā€¢ PA LO A L T O . C A L IF . General Information and Introduction to the Shockley 4 -L a y e r Diode The Shockley 4-layer diode is a two terminal, silicon semiconductor switch. It has


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    PDF 8000/nominal shockley diode application shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *ā€”4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z Xā€” < Pā€œ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17