SC 107 TRANSISTOR Search Results

SC 107 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

SC 107 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MRF949 Abstract: MRF949T1 Text: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz	Original	PDF	MRF949T1/D MRF949T1 MRF949 MRF949T1
Untitled Abstract: No abstract text available Text: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz	Original	PDF	MRF949T1/D MRF949T1 MRF949 MRF949T1/D
microlab fc 730 Abstract: ic 1 ne 555 RF NPN POWER TRANSISTOR C 10-12 GHZ 02059 BF 245 A spice IC NE 555 datasheet part marking leb RF NPN POWER TRANSISTOR 2.5 GHZ MRF949 MRF949T1 Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF949T1/D NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well	Original	PDF	MRF949T1/D MRF949 25SEP01 90/SC 26MAR02 microlab fc 730 ic 1 ne 555 RF NPN POWER TRANSISTOR C 10-12 GHZ 02059 BF 245 A spice IC NE 555 datasheet part marking leb RF NPN POWER TRANSISTOR 2.5 GHZ MRF949T1
transistor motorola 351 Abstract: MRF949T1 MRF949 sc 2878 Text: Order this document by MRF949T1/D NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz	Original	PDF	MRF949T1/D MRF949 25SEP01 90/SC 26MAR02 transistor motorola 351 MRF949T1 sc 2878
2N6284 inverter schematic diagram Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital	Original	PDF	SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
2N3820 Abstract: No abstract text available Text: riOTOROLA SC -CDIODES/OPT0 } Type Number Page Number Page Number D-S D-S S-G Power 2N3743 3-105 3-107 3-107 3-100 3-109 3-109 3-111 3-111 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2-6 2-7 2-7 THYRISTORS 2-7 3-105 2N4199 through 2N4206 2-5 3-120 TRANSISTORS	OCR Scan	PDF	2N3743 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2N3715 2N3716 2N3820
BC107 characteristic Abstract: BC109 MOTOROLA BC108 motorola BC107 BC109 characteristic BC107 MOTOROLA h22e bc107a BC109 BC108 characteristic Text: MOTOROLA SC XSTRS/R F 12E 0 I b3b?SSM G0ä b4S S 1 BC107, A, B* C thru BC109, A, B, C M A X IM U M RATINGS R a tin g Sym bol BC BC BC 107 108 109 U nit Collector-Emitter Voltage VCEO 45 25 25 Vdc Collector-Base Voltage VcBO 50 30 30 Vdc Em itter-Base Voltage	OCR Scan	PDF	BC107, BC109f O-206AA) BC107 characteristic BC109 MOTOROLA BC108 motorola BC107 BC109 characteristic BC107 MOTOROLA h22e bc107a BC109 BC108 characteristic
mrf941 Abstract: MRF9411L s2l sot23 Text: MOTOROLA SC X S T R S / R MOTOROLA 4bE D • b3b?25M _ F m SEMICONDUCTOR ■ 0014141 4 ■ *T^3 I - TECHNICAL DATA MRF941 MMBR941L MRF9411L The RF Lino NPN S ilico n Low N bise, High-Frequency Transistors lc 3 50 mA LOW NOISE HIGH FREQUENCY	OCR Scan	PDF	MRF941 MMBR941L MRF9411L MRF941 MRF9411L s2l sot23
MRF586 Abstract: MRF506 Motorola AR 164 MRF587 MRF587 equivalent Text: MOTOROL A SC XSTRS/R F *4hE D b3b?254 DDTMTTM 1 •ROTfe » E 3 5 -O S MOTOROLA ■ SEMICONDUCTOR I MRF586 MRF587 TECHNICAL DATA D esign er's D ata Sheet The RF Line NPN SIU C O N HIGH FREQUENCY TRANSISTORS . . . designed for use in high-gain. low-noise ultra-linear, tuned and	OCR Scan	PDF	MRF586 MRF587 5-10pF 15kHz MRF506 Motorola AR 164 MRF587 MRF587 equivalent
transistor vergleichsliste Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G	OCR Scan	PDF
KT 819 transistor Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18 Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e	OCR Scan	PDF
npn, transistor, sc 107 b Abstract: motorola automotive transistor sc 107 transistor mj10012 motorola mj10012 Text: MOTOROLA Order this document by MJ10012/D SEMICONDUCTOR TECHNICAL DATA M J10012 M JH 10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.	OCR Scan	PDF	MJ10012/D MJ10012 MJH10012 J10012 340D-01 O-218 npn, transistor, sc 107 b motorola automotive transistor sc 107 transistor mj10012 motorola
bc 303 transistor Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109 Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in	OCR Scan	PDF
TRANSISTOR BC 137 Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107 Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.	OCR Scan	PDF	023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107

MRF9331 Abstract: MRF9331L BF432L BF432 MRF933 Text: MOTOROLA SC CXSTRS/R F ifbE H • b3b?25M 0015073 3 ■MOTb MOTOROLA ■ SEMICONDUCTOR wm TECHNICAL DATA MRF9331L BF432L* The RF Line N P N Silicon High-Frequency Transistor 'European Part Number . designed primarily for use in low power amplifiers to 1 GHz. Ideal for pagers and	OCR Scan	PDF	OT-143 MRF9331 MRF9331L BF432L BF432 MRF933
bf433 Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68 Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.	OCR Scan	PDF	MRF681 bf433 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
Untitled Abstract: No abstract text available Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	PDF
BUS36 Abstract: BUS37 BUS37 MOTOROLA transistor 3-440 MARK B3L Text: M O T O R O L A SC -CXSTRS/R F} I" ' 6367254 MOTÖ RO LA D^\|t,3b7ESM SC' X S T R S / R F 96D -80706 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 12 A M PER ES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS The BU S36 and BUS37 transistors are designed for low voltage,	OCR Scan	PDF	BUS37 BUS36 BUS37 MOTOROLA transistor 3-440 MARK B3L
wf vqe 24 d Abstract: WF VQE 13 2N6050 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052 2N6057 2N6058 Text: PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current G ainhpE = 3500 Typ @ lc - 5.0 Adc	OCR Scan	PDF	2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6057 2N6051, 2N6058 wf vqe 24 d WF VQE 13 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052
2SC736 Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C	OCR Scan	PDF	NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2SC736 BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726
transistor k 425 Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A Text: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 \| BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED	OCR Scan	PDF	r-33-73 BU522 BU522A BU522B BU522) BU522A) BU522B) BU522A, transistor k 425 sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
sc 107 transistor Abstract: SOT143 thermal impedance curve Text: GENERAL Page Quality 82 Pro Electron type numbering system 82 Rating systems 83 Letter symbols 84 S-parameter definitions 87 Equivalent package designators 88 Transistor ratings 88 Thermal considerations 91 Power derating curves for SMDs Power derating curve for SOT23	OCR Scan	PDF	OT143 SC-59 SC-70 SC-88 SC-75 OT223 sc 107 transistor SOT143 thermal impedance curve
Motorola transistor 388 TO-204AA Abstract: No abstract text available Text: MOTOROLA SC X S T R S / R F bBF T> b3b?2SM □ □ ' l a m a I MOTb 3?o MOTOROLA • I SEM ICO NDUCTO R TECHNICAL DATA IRF350 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number Voss IRF350 400 V This TMOS Power FET is designed for high voltage, high speed	OCR Scan	PDF	IRF350 O-204AA) 97A-01 97A-03 O-204AE) Motorola transistor 388 TO-204AA
Transistor BFX 90 Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor Text: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general	OCR Scan	PDF	23ShQS Q62702-F296 Transistor BFX 90 transistor bfx 73 BFX 514 BFX89 b 514 transistor

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SC 107 TRANSISTOR Search Results

SC 107 TRANSISTOR Result Highlights (5)

SC 107 TRANSISTOR Datasheets Context Search

MRF949

Untitled

microlab fc 730

transistor motorola 351

2N6284 inverter schematic diagram

2N3820

BC107 characteristic

mrf941

MRF586

transistor vergleichsliste

KT 819 transistor

npn, transistor, sc 107 b

bc 303 transistor

TRANSISTOR BC 137

MRF9331

bf433

Untitled

BUS36

wf vqe 24 d

2SC736

transistor k 425

sc 107 transistor

Motorola transistor 388 TO-204AA

Transistor BFX 90