SBE ENCAPSULATED SERIES Search Results

SBE Encapsulated Series

Abstract: encapsulated E77014 voltage transformer 3.3 volt E1000WB Transformer 500 volt to 60 volt E050 E500JN SBE 461 E100J
Contextual Info: 5 Industrial Control Transformers The SBE - Encapsulated Series The SBE Encapsulated industrial control transformers are epoxy encapsulated to seal the transformer windings against moisture, dirt and industrial contaminants. Extra deep, molded terminal barriers reduce the chance

E100JN

Abstract: E500EWB E050W E1000WB
Contextual Info: 5 Industrial Control Transformers The SBE - Encapsulated Series The SBE Encapsulated industrial control transformers are epoxy encapsulated to seal the transformer windings against moisture, dirt and industrial contaminants. Extra deep, molded terminal barriers reduce the chance of

E050EWB

Abstract: E1000WB E500JN E075 E500WB
Contextual Info: 4 Industrial Control Transformers The SBE - Encapsulated, Copper Wound Series The SBE Encapsulated industrial control transformers are epoxy encapsulated to seal the transformer windings against moisture, dirt and industrial contaminants. Extra deep, molded terminal barriers reduce the chance of

E050E

Abstract: E150TF 277 volt glass fuse 380 volt
Contextual Info: 1020-2012:QuarkCatalogTempNew 8/28/12 2:02 PM Page 1020 11 TEST & MEASUREMENT 120 x 240 Volt Primary, 24 Volt Secondary TRANSFORMERS ENCLOSURES Encapsulated Industrial Control Transformers — SBE Series INTERCONNECT Industrial Control Transformers C ᭤

Contextual Info: SbE D • ^70570 D DD 7D 3ti Eb2 « Z E T B BPW SERIES ZETEX SEMICONDUCTORS SILIC O N PIN PHOTO D IO D ES " F 4 l~ A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection

diode zs104

Abstract: zs102 diode ZS120
Contextual Info: SbE D • 'HTOSTfl G007027 540 ■ Z E T B AXIAL DIODES ZETEX SEMICONDUCTORS I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to

H2612-12

Abstract: h261 H2612-10 H2612-8
Contextual Info: MICROSEMI CORP/ MICRO SbE T> • tllS'lD? G O D I M I 70S m n Q L / T-D t-Ô °l MICRO QUALITY / High Voltage Power Rectifier* SEMICONDUCTOR, INC H2612 s e r ie s High Power Avalanche Grade Silicon Epoxy Encapsulated High Purity Epoxy MAXIMUM RATINGS At TA = 2 5 X unless otherwise noted

ZS150

Abstract: CECC 50001-057 BS9300 ZS100 ZS102 ZS151 ZS104 ZS122 ZS101 ZS106
Contextual Info: SbE D • 'HTOSTfl G 0 0 7 02 7 540 ■ Z E T B AXIAL DIODES ZETEX S E M I C O N D U C T O R S I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to

PH 21 DIODE

Abstract: DD40 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A PLVA468A
Contextual Info: SbE D • T l l Q Ô S b D04 D Û7 1 TET ■ PHIN nmitps Semiconductors Product specification T ~ 0 7 ~ i I Low voltage avalanche diode P H I L I PS I N T E R N A T I O N A L PLVA400A SbE D KN FEATURES DESCRIPTION • Very low dynamic impedance at low currents: approximately 1/6o

E180N

Abstract: E060CK E180N SBE HS19F500B HS5F7.5AS HS20F500B HS5F5AS Sola/transformer 3000 kVA C1047 E180CK
Contextual Info: Sola/Hevi-Duty General Purpose and Buck Boost Transformers General Purpose Electrical Transformers c Free Shielding c Fast, Easy Installation Single Phase, 10 KVA Ñ 240 ´ 480 Volt Primary, 120/240 Secondary, 60 Hz c UL-3R Enclosures c Highly Versatile Hevi-Duty General Purpose Transformers are the industryÕs workhorses.

plji

Abstract: transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777
Contextual Info: Philips Semiconductors_ Product specification HF/VHF power MOS transistor SbE J> m pLJILIPS INTERNATIONAL FEATURES • • • • • BLF241 711DflSb 00437bfc. 453 • PHIN PIN CONFIGURATION 7 “ 3 ^ " " 0 High power gain Easy power control

ZNP102

Abstract: BPX25
Contextual Info: SbE D • ^70576 D D D 7 D 3 7 MTT ■ Z E T B SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF ZETEX PHO TO TRANSISTORS ’T " *4 ^ ^ i Alarm System s, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc.

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

222203028109

Abstract: IR802 transistor PH7n vogt 44t transistor 2222 kn a ceramic trimmer capacitor International Power Sources ph7n tl 4013
Contextual Info: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS BLF547 INTERNATIONAL FEATURES SbE 7110fl2b 00414012 flJ3 BIPHIN T> PIN CONFIGURATION 7 - 3 * ? - ¡ S ' • • • • High power gain Easy power control Good thermal stability

uA740

Abstract: PHILIPS OQ 2222 SOT123 Package UA740 8 pin capacitor polyester philips 2222 311 capacitor philips International Power Sources philips Trimmer 60 pf sot123 437S
Contextual Info: Product specification Philips Semiconductors BLF225 VHF power MOS transistor PHILIPS INTERNATIONAL 711005b GG437S7 44G M P H I N 5bE » PIN CONFIGURATION FEATURES • Easy power control • Good thermal stability • Withstands full load mismatch. D ESCRIPTIO N

Contextual Info: R C D COriPONENTS INC SbE D 74flb34h DOOQHSt, 313 ACTIVE DIGITAL DELAY LINES SERIES A0805 5-TAP 8-PIN DIP .SERIES SA0805 5-TAP 8-PIN SIP ’SERIES A1405 5-TAP 14-PIN DIP SERIES A1410 10-TAP 14-PIN DIP Wide selection of sizes! • ■ ■ ■ ■ ■ Economical cost, prompt delivery!

MPA92

Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
Contextual Info: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability

znp100

Abstract: ZNP102
Contextual Info: 5bE ]> • ^70570 M S SERIES D G D 7 D 3 4 7flD « Z E T B ZETE X s e m i c o n d u c t o r s SILICON M E S A PHOTOCELLS A range of silicon photovoltaic cells of mesa construction available in sizes from micro-miniature to large active area for general purpose use.

Contextual Info: Philips Semiconductors Preliminary »pacification T HF/VHF power MOS transistor PHILIPS INT ER NATIONAL FEATURES - 3 V - 0 5 BLF221B 5bE P • 7110fl5b □ D M 3 7 4 el 37M H P H I N PIN CONFIGURATION • High power gain • Easy power control • Gold metallization

pw 2222 a

Abstract: PHILIPS 4312 amplifier 55.224 BLF346 VCB223
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor PHILIPS BLF346 INTERNATIONAL FEATURES SbE ]> • 7HGfl2b 0Cm3flqLf ETT PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

2222 kn a

Abstract: 175B BLF277 c17f
Contextual Info: Philips Semiconductors Product specification T -3 1 -tS VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES SbE D • BLF277 711002t. GÜHBÖbb 334 ■ PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability

38478

Abstract: 2222 372 Philips 2222 344 capacitors International Power Sources Philips 2222 372 capacitor BLF546 2322 151 12x3 727 Transistor power values GP 24A
Contextual Info: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS INTERN A T I O N A L FEATURES 3 SbE m D 711005 b Ü M 4 0 Q3 BLF546 fi'ìD B I P H I N PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability

MEAB29

Abstract: BLF245C philips power CAPACITOR 111 philips power CAPACITOR 157 2322 156 philips
Contextual Info: Philips Semiconductora Product «pacification VHF push-pull power MOS transistor T“3 * H 3 PHILIPS INTERNATIONAL FEATURES SbE J> 711GÛ2L, D D M 3 â n BLF245C 51fl « P H I N PIN CO NFIGURATION • High power gain • Easy power control • Good thermal stability

2SC2570

Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­