BLF221B Search Results

Contextual Info: bbSBRBl D O E n Q l 101 • APX Philips Sem iconductors Prelim inary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b^E » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

transistor tt 2222

Abstract: TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03
Contextual Info: Preliminary »pacification Philips Semiconductors HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF221B SbE D • 7110fl5b 0DM37Mel 37M HIPHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

Contextual Info: Philips Semiconductors Preliminary »pacification T HF/VHF power MOS transistor PHILIPS INT ER NATIONAL FEATURES - 3 V - 0 5 BLF221B 5bE P • 7110fl5b □ D M 3 7 4 el 37M H P H I N PIN CONFIGURATION • High power gain • Easy power control • Gold metallization

Contextual Info: BLF221B Transistors N-Channel UHF/Microwave MOSFET V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)1.0 P(D) Max. (W)7.4# Maximum Operating Temp (øC)200õ I(DSS) Min. (A) I(DSS) Max. (A)10u @V(DS) (V) (Test Condition)12.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.80m

2322151

Abstract: M8807 philips 2222 115 13102 BLF221B URA310 philips resistor 2322 BLF221
Contextual Info: tjbS3R31 Philips Sem iconductors OQE^Ql 101 MAPX Preliminary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b=JE » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

Contextual Info: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121