S21ANG Search Results

Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7

S465A

Abstract: FLM1314-18F ED-4701
Contextual Info: FLM1314-18F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・Broad Band: 13.75~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

transistor marking code 1325

Abstract: R04003 ims pcb filtronic Solid State
Contextual Info: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

ED-4701

Abstract: FLM1314-18F RM-1101
Contextual Info: FLM1314-18F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: add=27%(Typ.) ・Broad Band: 13.75~14.5GHz ・Impedance Matched Zin/Zout = 50 ・Hermetically Sealed Package DESCRIPTION

transistor SMD P2F

Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State
Contextual Info: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

XC2500A-03

Abstract: TGA2601-SM
Contextual Info: TGA2601-SM 800 - 3000 MHz High IP3 Dual pHEMT Key Features and Performance • • • 800 - 3000 MHz Frequency Range <0.7 dB Noise Figure Gain 24 dB @ 900 MHz, 19 dB @ 1950 MHz, 19 dB @ 2600 MHz Bias Conditions: 4 V/100 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm

WJA1020

Contextual Info: WJA1020 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 4000 MHz 17 dB Gain @ 1.9GHz +17 dBm P1dB @ 1.9GHz +34 dBm OIP3 @ 1.9GHz Operates from +5V @70mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package

EV-SP-000044-001

Abstract: FPD200 CB100 FPD20 FPD2000AS RO4003 cw 7687 A114 es IPC 9701 W2020
Contextual Info: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features „ „ „ „ „ Optimum Technology Matching Applied „ GaAs HBT „ GaAs MESFET DE InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT

WJA1020

Contextual Info: WJA1020 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 4000 MHz 17 dB Gain @ 1.9GHz +17 dBm P1dB @ 1.9GHz +34 dBm OIP3 @ 1.9GHz Operates from +5V @70mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package

resistor 10ohm

Abstract: 486 motherboard schematic TGA2602-SM 2.2Kohm resistor 225S12
Contextual Info: Advance Product Information April 11, 2006 800 - 3000MHz High IP3 Dual LNA TGA2602-SM Key Features and Performance • • • • • 800 - 3000 MHz Frequency Range <0.6 dB Noise Figure 22dB Gain Bias Conditions: 4V/100mA Package Dimensions: 2.0 x 2.0 x 0.9 mm

APH131C

Contextual Info: APH131C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 35 to 40 GHz • Linear gain: 16 dB • PldB: 23 dBm • Built-in output power detector with reference port • Unconditionally stable • DC power: 4 Vdc at 600 mA Description and Applications

ims pcb

Contextual Info: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

RESISTOR 10OHM

Abstract: 22kohm resistor 22pf capacitor
Contextual Info: Advance Product Information September 09, 2008 DC - 3000MHz High IP3 Dual pHEMT TGA2602-SM Key Features and Performance • • • • • 800 - 3000 MHz Frequency Range <0.6 dB Noise Figure 22dB Gain Bias Conditions: 4V/100mA Package Dimensions: 2.0 x 2.0 x 0.9 mm

SMD-B 053

Abstract: FPD4000AF BTS 308 atc600 ATC600S1R0
Contextual Info: FPD4000AF Datasheet v2.1 4W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: High power AF package 36.5 dBm Output Power P1dB 10.5 dB Power Gain (G1dB) 49 dBm Output IP3 10V Operation 45% Power-Added Efficiency Usable Gain to 4GHz GENERAL DESCRIPTION:

P 9806 AD

Contextual Info: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power

UM 9515

Abstract: Filtronic
Contextual Info: FMA219 Datasheet v2.3 X-BAND LNA MMIC FEATURES: • • • • • • LAYOUT: 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports GENERAL DESCRIPTION:

RESISTOR 10OHM

Abstract: 22pf capacitor
Contextual Info: Advance Product Information May 24, 2006 DC - 3000MHz High IP3 Dual pHEMT TGA2602-SM Key Features and Performance • • • • • 800 - 3000 MHz Frequency Range <0.6 dB Noise Figure 22dB Gain Bias Conditions: 4V/100mA Package Dimensions: 2.0 x 2.0 x 0.9 mm

CAPACITOR 33PF

Abstract: 8653 p FPD1000AS T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
Contextual Info: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features „ „ „ „ Optimum Technology Matching Applied „ „ GaAs HBT „ DE GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS W SiGe HBT

transistor marking code 1325

Abstract: vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a FPD2000AS ipc 9701 filtronic Solid State
Contextual Info: FPD2000AS Datasheet v2.4 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz

transistor Bc 542

Abstract: transistor bc 567
Contextual Info: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power

70GHz HEMT Amplifier

Abstract: smd code z16 transistor z14 smd FPD1000AS T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf
Contextual Info: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized

IM324

Contextual Info: FPD4000AS Datasheet v2.1 2.5W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE: Low parasitics AS package 34.5 dBm Output Power P1dB @1.8GHz 12 dB Power Gain (G1dB) @1.8GHz 45 dBm Output IP3 8V Operation 50% Power-Added Efficiency Evaluation Boards Available

UM 9515

Abstract: x-band mmic lna FMA219 LNA 9GHz Z 8607
Contextual Info: FMA219 Datasheet v3.0 X-BAND LNA MMIC FEATURES: • • • • • • LAYOUT: 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports GENERAL DESCRIPTION:

transistor marking code 1325

Abstract: FPD2000AS filtronic Solid State
Contextual Info: FPD2000AS Datasheet v3.0 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz