21DBM Search Results

UPG2214TK

Abstract: UPG2179TB UPG2301TQ LDMOS NEC amplifer UPD5702TU CC156
Contextual Info: Class 1 Power Amplifiers for Bluetooth NEW! UPG2214TK or UPG2179TB GaAs Switch IC I NEC Class One Silicon LDMOS or GaAs HBT Power Amplifier RFIC Baseband Q VCC NEW! Low Cost Silicon LDMOS UPD5702TU MMIC Power Amplifier • Output Power = 21dBm • Two Stage Device

ML2730

Contextual Info: ML2730 ML2730 2.4GHZ VARIABLE DATA RATE FSK TRANSCEIVER WITH INTEGRATED PA Package: 40 QFN, 6mmx6mm RX Subsystem IF Subsystem DATASEL F To V RXIN, RXIP 2.4GHz Input         gn es i TXO 2.4GHz +21dBm Output RXON XCEN DATA CLK EN TX Subsystem

SSOP14 pcb

Abstract: 2.2nh GRM39 HK1608 NJG1301V NJU7660 SSOP14
Contextual Info: NJG1301V 中電力増幅器 GaAs MMIC •概要 NJG1301V はPHS の出力段パワー増幅用に開発 された GaAs MMIC です。 入出力整合回路を内蔵し、低電圧及び高効率動作を 特徴とし、容易に 21dBm 出力を低歪みで得ることが

ISL1557AIRZ-T7

Abstract: ISL1557A ISL1557AIUEZ intersil PART MARKING ISL1557AIRZ ISL1557AIUEZ-T7 BBBGA ADSL2
Contextual Info: ISL1557A Data Sheet February 26, 2008 12V xDSL Differential Line Driver with Enhanced Output Protection FN6568.0 Features • 21dBm output power capability The ISL1557A is a dual operational amplifier designed for VDSL2 and ADSL line driving in DMT based solutions. This

in-822

Abstract: LAVI-10VH PL-012
Contextual Info: Surface Mount Frequency Mixer Level 21 LO Power +21dBm 300 to 1000 MHz Maximum Ratings Operating Temperature Storage Temperature Features • • • • RoHS compliant very high IP3, 33 dBm typ. wideband, 300 to 1000 MHz excellent L-R isolation, 50 dB typ.

LT5503

Contextual Info: LT5517 40MHz to 900MHz Quadrature Demodulator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO RF Input Frequency Range: 40MHz to 900MHz High IIP3: 21dBm at 800MHz High IIP2: 58dBm at 800MHz I/Q Gain Mismatch: 0.3dB Max I/Q Phase Mismatch: 0.7°

Contextual Info: RF5375 RF5375 2.4GHz to 2.5GHz, 802.11b/g/n WiFi Front End Module 2.4GHz TO 2.5GHz, 802.11b/g/n WiFi FRONT END MODULE VCC PDet 12 11 10 TX_IN 1  Single Supply Voltage 3.0V to 4.8V  Output Power: 11b=21dBm Meeting Spectral Mask 11n=18dBm at <2.5% EVM

Contextual Info: RF5112 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features  Single Power Supply 3.0V to 5.0V  +23dBm, <4%EVM, 250mA at VCC =5.0V  +21dBm, <4.0%EVM, 185mA atVCC =3.3V  28dB Typical Small Signal Gain  50 Input and Interstage Matching

RF5375TR7

Abstract: schematic wifi board wifi RECEIVER CIRCUIT DIAGRAM wifi amplifier circuit diagram 11N-50
Contextual Info: RF5375 RF53753.3V, 2.4GHz 802.11b/g/n WiFi Front End Module 3.3V, 2.4GHZ 802.11b/g/n WiFi FRONT END MODULE Features VCC PDet TX_IN 1 Integrated 2.5GHz b/g/n Amplifier, SP3T Switch, and Power Detector Coupler Vreg Single Supply Voltage 3.0V to 4.8V Output Power: 11b=21dBm

Contextual Info: RFFM8204 2.4GHz TO 2.5GHz 802.11b/g/n WiFi FRONT END MODULE Package Style: QFN, 16-pin, 2.5mmx2.5mmx0.45mm ANT NC C_RX C_BT 16 15 14 13 12 NC PDET 1 Features      POUT = 19dBm 11g OFDM 2.5% EVM POUT = 21dBm Meeting 11b Spec Mask Input and Output Matched to

FMC2223PI-02

Abstract: 12X15 FMC2223P1-02
Contextual Info: n ¡ftU. FMC2223PI-02 rU JIlbU Ku, K-Band Power GaAs Modules FEATURES • ♦ ♦ • * ♦ High Output Power: P ^ g = 21dBm Typ. High Gain: G 1dB = 12dB(Typ.) Low In/Out VSWR Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)

RFFM8202

Abstract: QFN-16 2.5mm x 2.5mm DS1203 Tablets DIAGRAM WiFi block diagram
Contextual Info: RFFM8202 Proposed 2.4GHz TO 2.5GHz WiFi FRONT END MODULE Package Style: QFN, 16-pin, 2.5mmx2.5mmx0.45mm         POUT = 19dBm 11g OFDM 2.5% EVM POUT = 21dBm Meeting 11b Spec Mask Small Size High Performance FEM Excellent Linearity Input and Output Matched to

Contextual Info: y2 k n ew ! HMC141 HMC142 MICROWAVE CORPORATION GaAs MMIC DOUBLE-BALANCED MIXER 6 - 18 GHz FEBRUARY 2000 Features General Description INPUT IP3: +21dBm The HMC141 chip is a miniature doublebalanced mixer which can be used as an upconverter or downconverter. The chip

HJK-20VH

Contextual Info: Frequency Mixer HJK-20VH+ Typical Performance Curves Conversion Loss @ IF=85MHz 11.0 LO = +19dBm 10.5 LO = +20dBm 9.5 LO = +21dBm Conversion Loss dB 10.0 9.0 8.5 8.0 7.5 7.0 6.5 6.0 400 620 840 1060 1280 1500 1720 1940 2160 2380 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1520MHz

4558 pin function

Contextual Info: Surface Mount Frequency Mixer Level 21 LO Power +21dBm 470 to 1730 MHz Maximum Ratings Operating Temperature Storage Temperature Features -45°C to 85°C • • • • RoHS compliant very high IP3, 32 dBm typ. wideband, 470 to 1730 MHz excellent L-R isolation, 52 dB typ.

Contextual Info: AP1045 2.4~2.5 GHz 1 Watt Power Amplifier 2003.07.10 • 22 dBm linear output power with AP1045 is a linear, two-stages power amplifier MMIC with high output power in 2.4GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers 21dBm out put

LAVI-10VH

Contextual Info: Frequency Mixer LAVI-10VH+ Typical Performance Curves Conversion Loss @ IF=175MHz 12.0 LO = +18dBm Conversion Loss dB 11.3 LO = +21dBm 10.6 LO = +24dBm 9.9 9.2 8.5 7.8 7.1 6.4 5.7 5.0 260 520 780 1040 1300 1560 1820 2080 2340 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=650MHz

GRM39

Abstract: HK1608 NJG1301V NJU7660 SSOP14
Contextual Info: NJG1301V 中電力増幅器 GaAs MMIC •概要 NJG1301V はPHS の出力段パワー増幅用に開発 された GaAs MMIC です。 入出力整合回路を内蔵し、低電圧及び高効率動作を 特徴とし、容易に 21dBm 出力を低歪みで得ることが

LAVI-362VH

Contextual Info: Frequency Mixer LAVI-362VH+ Typical Performance Curves Conversion Loss @ IF=540MHz 12.0 LO = +21dBm Conversion Loss dB 11.4 LO = +22dBm 10.8 LO = +23dBm 10.2 9.6 9.0 8.4 7.8 7.2 6.6 6.0 385 770 1155 1540 1925 2310 2695 3080 3465 3850 RF Frequency (MHz) Conversion Loss vs. IF @ RF=2200.1001MHz

HJK-20VH

Contextual Info: Frequency Mixer HJK-20VH+ Typical Performance Curves Conversion Loss @ IF=85MHz 11.0 LO = +19dBm Conversion Loss dB 10.5 LO = +20dBm 10.0 LO = +21dBm 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 400 620 840 1060 1280 1500 1720 1940 2160 2380 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1520MHz

FMC1819P1-01

Contextual Info: FMC1819P1-01 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 21dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC2122P1-02

Contextual Info: FMC2122P1-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 21dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features   +21dBm, <4.0%EVM, 185mA atVCC =3.3V NC VC1 NC 13 1st     2nd 12 RFOUT/ VC2 11 RF OUT 10 RF OUT 9 NC Input Match 28dB Typical Small Signal Gain 50 Input and Interstage Matching

Contextual Info: Surface Mount Frequency Mixer Level 21 LO Power +21dBm 300 to 1000 MHz Maximum Ratings Operating Temperature Storage Temperature Features • • • • RoHS compliant very high IP3, 33 dBm typ. wideband, 300 to 1000 MHz excellent L-R isolation, 50 dB typ.