S20NS Search Results

Contextual Info: FUJITSU MIC RO ELEC TR ON IC S FUJITSU 23E D • 374ì?bH 000=1222 2 ■ CMQSir,Q48,576 Bl UV ERASABLBREA ONLY. MEMORYf EPROM MBM27C1001-15 MBM27C1001-20 MBM27C1001-25 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY (EPROM The Fujitsu MBM27C1001 EPROM Is a high speed read-only static memory that

Contextual Info: DG444, DG445 33 Monolithic Quad SPST CMOS Analog Switches February 1995 Features • Description ON-Resistance 85ft Max • Low Power Consumption PD <35^W • Fast Switching Action - tON<250ns - t0FF <120ns (DG444) • Low Charge Injection • Upgrade from DG211/DG212

Contextual Info: ROHM CO LT D 4oe d m T a e a 'm ooom a? I C / M e m o r y ICs s b irh h BR2865A 'T-4L-/3-2~ 7 8K X 8 fcf-y K 5V EEPROM 8K X 8 Bit 5V EEPROM •W fi^ ife E l/D im e n s io n s U n it: mm BR2865A ( i, 8192 X 8 M "j (EEPROM) T 'f « U, Betti y ? RAM tmmzti k?

SPM27C256H20

Abstract: VPP-10 SPM27C256H25
Contextual Info: PF209-02 SPM27C256H 2 0 /2 5 CMOS 256K-BIT UV EPROM •A ccess Time 200ns/250ns • 3 2 ,7 6 8 Words X 8 Bits •L o w Supply Current •DESCRIPTION The CMOS EPROM SPM27C256H20/25 is a 32,768 words x 8 bits erasable and electrically programmable ROM. The peripheral CMOS circuit realizes High-speed and Low supply current. The SPM27C256H20/25 is

tc5517

Abstract: TC5517CF-15 5w cfl
Contextual Info: TOSHIBA MOS MEMORY PRODUCT TC5517CP-15/CPL-15/CP-20/CPL-20 JC5517CF -15/CFL -15/C F-20/C FL-20 2 ,0 4 8 W 0 R D X 8 BIT C M O S STATIC RAM D ESCRIPTIO N The TC 55 1 7 C P /C F is a 1 6 3 8 4 - b i t h ig h speed and lo w p o w e r fully static r a n d o m access m e m o r y o r g a ­

MBM27C64-25

Abstract: MBM27C64-25X tpH07 MBM2764 27C64-25 equivalent MBM27C64-30-W
Contextual Info: F U JIT S U MOS Memories • MBM27C64-25, MBM27C64-30 C M O S 65,536-Bit UV Erasable and Electrically Program m able Read Only Mem ory ¿n -Z / ^ L C c L D e s c rip tio n The Fujitsu MBM27C64 is a high speed 65,536-bit s ta tic Comple­ m entary MOS erasable and electrica lly reprogram m able read only

DG441

Abstract: DJ118
Contextual Info: £8 H A R R 'S DG441, DG442 Monolithic, Quad SPST, CMOS Analog Switches August 1997 Features Description • O N-Resistance M a x . 8511 The DG441 and DG442 monolithic CMOS analog switches are drop-in replace­ ments for the popular DG201A and DG202 series devices. They include four

KM718B90

Abstract: 52-PLCC-SQ
Contextual Info: KM718B90 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • The KM718B90 is a 1,179,648 bit Synchronous Static Random Access Memory designed to support 66MHz of Intel secondary caches. It is organized as 65,536 words

27c32

Abstract: 27C2S6 EPROM 27C32 MM2758 eprom 27C128 27c12 eprom 27C16 MM2758A 27C16 27C64
Contextual Info: MM2758 523 National ÉÆ Semiconductor MM2758 8,192-Bit 1024 x 8 UV Erasable PROM General Description Features The MM2758 is a high speed 8k UV erasable and e lectri­ c a lly reprogram m able EPROM, ideally suited fo r ap plica­ tio n s w here fa s t turnaround and pattern experim entation

Contextual Info: 3 WS« DG441, DG442 Monolithic Quad SPST CMOS Analog Switches November 1994 Features Description • ON-Resistance 85Î2 Max • Low Power Consumption PD <1.6mW) The DG441 and DG442 monolithic CMOS analog switches are drop-in replacements for the popular DG201A and DG202 series devices. They include four independent

Contextual Info: KM718B90 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On- Chip Address and Control Registers. • Single 5V±5% Power Supply.

Contextual Info: KM718V787 CMOS SRAM ELECTRONICS 128K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION. • Synchronous Operation. • On-Chip Address Counter. • Write Self-Timed Cycle. • On- Chip Address and Control Registers. • Single 3.3V±5% Power Supply.

IMX178

Contextual Info: DG411/883, DG412/883 fil h a r r i s ü 3/ÔÔ3 S E M I C O N D U C T O R Monolithic Quad SPST CMOS Analog Switches August 1994 Features • Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.

tc5517

Abstract: TC5517CP-15 JC551 TC351
Contextual Info: TOSHIBA MOS MEMORY PRODUCT TC5517CP-15/CPL-15/CP-20/CPL-20 T C 5 5 1 7 Q F - 1 5/CFL -1 5/CF -20/CFL -20 2 .0 4 8 W O R D x 8 B IT C M O S S T A T IC R A M D E S C R IP T IO N a c n e v e d . Thu s th e T C 5 5 1 7 C P / C F is m o s t suitable fo r use in lo w p o w e r a p p lic a t io n s w h e re battery

IC-551

Abstract: toshiba tc55 TC5518 8CR1 TC5518CP-20 2716 JL CPL-20 ic 5518 tc5518cp-15 TC5518CF-15
Contextual Info: TOSHIBA MOS MEMORY PRODUCT j s t a t ic ÌC 5 5 1 S C M 5 /C F L 1 5 /C F ram 2 0 /C F L 2 0 D E S C R IP T IO N The T C 5 5 1 8C P/C F is a 1 6 3 8 4 - bit high speed and lo w pow er sully static rando m access m e m o ry o rg a ­ nized as 2 0 4 8 w o rd s by a 8 bits using C M O S te c h ­

Contextual Info: FUJITSU LTD / S3E T> • - V & - / 3 374^7Sb 000330^ T2b Ü Ü f c A J c O November 1990 Edition 1.0 - FUJITSU DATA SHEET ■ MBM27C4001-12/-15/-20 CMOS 4M-BIT UV EPROM CMOS 4,194,304-BIT UV ERASABLE READ ONLY MEMORY

motorola MC

Abstract: Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Serial Input PLL Frequency Synthesizer The MC12210 is a 2.5GHz Bipolar monolithic serial input phase locked loop PLL synthesizer with pulse-swallow function. It is designed to provide the high frequency local oscillator signal of an RF transceiver in

SPM27C256

Abstract: SPM27C256H20 SPM27C256H25
Contextual Info: PF209-52 ▼ S SYSTEMS L i r 4 fc . A • ^ ^ * 256K BIT CMOS UV EPROM SPM27C256H20 • SPM27C256H25 SPM27C256 •DESCRIPTION The CMOS EPROM SPM 27C 256H 2o/25 is a 32,768 words x 8 bits erasable and electrically programmable ROM. The peripheral CMOS circuit realizes High-speed and Low supply current. The SPM 27C 256H 2o/25 is

AM2716DC

Abstract: AM2716-1DC AM2716-6DC AM2716 AM4716DC AM4716 Am2716-1 am9218 am2716d AM4716-6DC
Contextual Info: A m 2 7 1 6 /A m 4 7 1 6 2048 x 8-Bit UV Erasable PROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • • • • Direct replacement for Intel 2716 Interchangeable with Am9218 - 16K ROM Single +5V power supply Fast access time - 450ns standard with 350ns and 390ns

HA 1361 AUDIO AMP

Abstract: DG444DY dg444
Contextual Info: S OG444, DG445 Monolithic, Quad SPST, CMOS Analog Switches August 1997 Features Description • ON-Reslstance Max . 850 • Low Power Consumption (Pq) . <35|iW) • Fast Switching Action - tQN . <250ns

Contextual Info: f i l H A R R HS-6564RH IS SEMICONDUCTOR Radiation Hardened 8K x 8 ,16K x 4 CMOS RAM Module December 1992 Features Pinout • Radiation Hardened EPI CMOS - Total Dose 1 x 10s RAD SI - Transient Upset >1 x 10 RAD (Siys - Latch-Up Free to > 1 x 1012 RAD (Siys

21112 kONTRON

Abstract: EA-8332 elektronik DDR Am8251 AM9511 AM8251DC AM2716DC am9511a MM1402 MM5055
Contextual Info: a a a a a a a a a a a a a a a a a a a ;< t f n a ;i i i aaaaaaaa aaaaaaaaaa^ an azi n a a a a a a a n a a a a a n a n a ¿ i ;i ¿ t a a ;i a a a a a a a a a a a a a a a a a a r t a r ir ir iii aaaaaaaaaaaaaaaaaa^ aanaa a a a a a a a a a a a a a a a a r i^ a a a a in

MM2758

Abstract: MM2758A 27C1S ti 27c32 MM2758Q-A mm2758q 2716 8k eprom
Contextual Info: MM2758 8,192-Bit 1024 x 8 UV Erasable PROM General Description Features The MM2758 is a high speed 8k UV erasable and electri­ cally reprogrammable EPROM, ideally suited for applica­ tions where fast turnaround and pattern experimentation are important requirements.

Contextual Info: H a rris D G 411, D G 412 C l4 1 3 S E M I C O N D U C T O R Monolithic Quad SPST CMOS Analog Switches August 1993 Features Description ON-Resistance < 35i2 Max • Low Power Consumption PD < 35^W • Fast Switching Action • toN <175ns • tgpp<145ns