HS-6564RH
Abstract: No abstract text available
Text: HS-6564RH S I GN D ES W NE at F O R or D E H nter c D e R N 7 C /ts ME 564 or t COM ee HS-6 al Supp rsil.com E R S ic .inte NOT chn r Te or w w w u o 8K SI L tact con -INTER 8 1-88 September 1997 Features Radiation Hardened x 8, 16K x 4 CMOS RAM Module
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Original
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HS-6564RH
308mW/MHz
250ns
-55oC
125oC
HS5-6504RH
HS-6564RH
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PDF
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Untitled
Abstract: No abstract text available
Text: September 1997 HS-6564RH S IGN S E M I C O N D U C T O R ES WD NE OR F D E RH END -65647 M M O HS REC See NOT Radiation Hardened 8K x 8, 16K x 4 CMOS RAM Module Features Pinout • Radiation Hardened EPI CMOS - Total Dose 1 x 105 RAD Si - Transient Upset > 1 x 108 RAD (Si)/s
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Original
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HS-6564RH
HS5-6564RH
308mW/MHz
HS5-6504RH
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PDF
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HS-6564RH
Abstract: 108RAD
Text: Semiconductor HS-6564RH S IGN ES WD September 1997 NE OR F D E RH END -65647 M M O HS REC See NOT Radiation Hardened 8K x 8, 16K x 4 CMOS RAM Module Features Pinout • Radiation Hardened EPI CMOS - Total Dose 1 x 105 RAD Si - Transient Upset > 1 x 108 RAD (Si)/s
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Original
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HS-6564RH
308mW/MHz
250ns
-55oC
125oC
HS5-6564RH
HS5-6504RH
HS-6564RH
108RAD
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PDF
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HS-6564RH
Abstract: No abstract text available
Text: HS-6564RH S E M I C O N D U C T O R Radiation Hardened 8K x 8, 16K x 4 CMOS RAM Module November 1994 Features Pinout • Radiation Hardened EPI CMOS - Total Dose 1 x 105 RAD Si - Transient Upset > 1 x 108 RAD (Si)/s - Latch-Up Free to > 1 x 1012 RAD (Si)/s
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Original
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HS-6564RH
308mW/MHz
250ns
-55oC
125oC
HS5-6564RH
HS5-6504RH
HS-6564RH
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PDF
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U CCTTO0 RR ^fcxN September 1 9 9 7 Î * v i o i p tc ° ots. WS S-6564RH Radiation Hardened 8K x 8 , 16K x 4 CMOS RAM Module See Pinout Features • Radiation Hardened EPI CMOS - Total Dose 1 x 1 0 5 RAD Si - Transient Upset >1 x 108 RAD (Si)/s
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OCR Scan
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S-6564RH
HS5-6564RH
308mW/MHz
250ns
HS-6504RH
HS-6564RH
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PDF
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Untitled
Abstract: No abstract text available
Text: S-6564RH HARRIS S E M I C O N D U C T O R Radiation Hardened 8K x 8 , 16K x 4 CMOS RAM Module September 1997' Features Pinout • Radiation Hardened EPI CMOS - Total Dose 1 x 105 RAD Si - Transient Upset >1 x 108 RAD (Si)/s - Latch-Up Free to > 1 x 1012 RAD (Si)/s
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OCR Scan
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S-6564RH
HS5-6564RH
308mW/MHz
250ns
HS5-6504RH
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PDF
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Untitled
Abstract: No abstract text available
Text: f i l H A R R HS-6564RH IS SEMICONDUCTOR Radiation Hardened 8K x 8 ,16K x 4 CMOS RAM Module December 1992 Features Pinout • Radiation Hardened EPI CMOS - Total Dose 1 x 10s RAD SI - Transient Upset >1 x 10 RAD (Siys - Latch-Up Free to > 1 x 1012 RAD (Siys
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OCR Scan
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HS-6564RH
HS5-6564RH
308mW/MHz
250ns
HS56564RH
HS5-6504RH
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PDF
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Untitled
Abstract: No abstract text available
Text: Œ\ HARRIS S E M I C O N D U C T O R December 1992 HS-6564RH Radiation Hardened 8K x 8 ,16K x 4 CMOS RAM Module Features • Radiation Hardened EPI CMOS - Total Dose 1 x 10s RAD Si - Transient Upset > 1 x 108 RAD (Si)/s - Latch-Up Free to > 1 x 1012 RAD (Si)/s
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OCR Scan
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HS-6564RH
308mW/MHz
250ns
HS-6564RH
HS5-6504RH
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PDF
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