2SK1258
Abstract: SC-65
Text: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDb on : RDS (on) l = 0 . 0 2 i l (typ.) • High sw itching ra te : t( = 350ns (typ.) • No secondary breakdow n Unit: mm 25.5max.
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2SK1258
350ns
2SK1258
SC-65
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CAT28LV65
Abstract: No abstract text available
Text: P relim inary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation:
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CAT28LV65
64K-Bit
250/300/350ns
11b2b15
24-40-LEAD
CAT28LV65
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PDF
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CAT28LV64
Abstract: No abstract text available
Text: P relim inary CAT28LV64 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6 V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation:
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CAT28LV64
64K-Bit
250/300/350ns
CAT28LV
11b2b15
24-40-LEAD
CAT28LV64
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PDF
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CAT28LV65
Abstract: No abstract text available
Text: Preliminary CAT28LV65 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation: - Active: 8 mA Max.
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CAT28LV65
64K-Bit
250/300/350ns
CAT28LV65
28LV65
28LV65I
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Untitled
Abstract: No abstract text available
Text: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs
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PYA28C256
350ns
28-Pin
32-Pin
450x550
PYA28C256
32Kx8
64-byte
EEPROM104
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PDF
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nec 2716 eprom
Abstract: 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764
Text: NEC NMUS juPD2364 NEC Electronic U.S.A. Inc. Electronic A rrays Division READ ONLY MEMORY 8192 WORDS, 8 BITS/WORD FEATURES: GENERAL DESCRIPTION: • Three Fast Access Times -450nsec -350nsec -300nsec • All Inputs and Outputs TTL Compatible • Single +5V ± 10% Power Supply
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uPD2364
iPD2364
-450ns35PC
2364-30PC
450nsec
350nsec
300nsec
nec 2716 eprom
2364 eprom
NEC 2732
pin diagram of ic 2764
pin diagram of ic 2732
2732 rom
2732 eprom
Electronic Arrays
2732 memory chip
ROM 2764
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PDF
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XL2804A-250
Abstract: XL2804A-300 XL2804A-350 XL2804A-450 XL2804A 16L06
Text: EXEL - XL2804A MICROELECTRONICS, INC. . 512 X 8 Electrically Erasable P R O M PIN CONFIGURATION FEATURES • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns 24 Pin PDIP Type "P" Package J ■ 5 Volt-only Operation
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250ns,
300ns,
350ns,
450ns
100pF)
100pF
XL2804A
XL2804A-250
XL2804A-300
XL2804A-350
XL2804A-450
XL2804A
16L06
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PDF
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CAT28LV65
Abstract: PARALLEL E2PROM
Text: Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: ■ Automatic Page Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer – 250/300/350ns ■ Low Power CMOS Dissipation:
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CAT28LV65
64K-Bit
250/300/350ns
CAT28L
28LV65
8mmx13
500/Reel
250ns
300ns
350ns
CAT28LV65
PARALLEL E2PROM
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PDF
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1A31A
Abstract: C804B V/HC-804
Text: BURR-BROliJN CORP HE D I B U R R -B R O W N * 173]i3bS [1014547 5 I SHC803BM, CM SHC804BM, CM [ Ultra-High Speed SAM PLE/H O LD AMPLIFIER FEATU RES D E S C R IP T IO N • 350nsec max ACQUISITION TIM E The SHC803 and SHC804 are high speed sample/ hold amplifiers designed for use in fast 12-bit data
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SHC803BM,
SHC804BM,
350nsec
150nsec
SHC803)
24-PIN
SHC803
SHC804
12-bit
1A31A
C804B
V/HC-804
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PDF
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m2716a
Abstract: No abstract text available
Text: £ ÿ j SGS-THOMSON D»i LI(gï[si(ô RiD(gl M2716 N M O S 16K (2K x 8) UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns - SINGLE 5V SUPPLY VOLTAGE - STATIC-NO CLOCKS REQUIRED
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
m2716a
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PDF
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CAT28LV64
Abstract: 28LV64 28LV64-25
Text: Preliminary CAT28LV64 Preliminary CAT28LV64 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6 V Supply ■ Commercial and Industrial Temperature Ranges ■ Read Access Times: ■ CMOS and TTL Compatible I/O – 250/300/350ns ■ Automatic Page Write Operation:
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CAT28LV64
64K-Bit
250/300/350ns
CAT28LV64
300-T
28LV64
28LV64-25
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PDF
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2364
Abstract: A12CE SMM2364C pf051 SMM2364
Text: PF051-05 SMM2364C CMOS 64K-BIT MASK ROM •L o w Supply Current •A ccess Time 350ns/450ns #8,192 Words X 8 Bits Asynchronous • DESCRIPTION The SMM2364C is an 8,192 words X 8 bits asynchronous, static, mask programmable ROM on a monolithic CMOS chip and is characterized by fast access time and very low power dissipation. The nature "static”
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PF051-05
SMM2364C
64K-BIT
350ns/450ns
2364C
24-pin
2364
A12CE
pf051
SMM2364
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PDF
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B2716
Abstract: m2716 FDIP24W M271616
Text: M2716 16 Kbit 2Kb x 8 NMOS UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE
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Original
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
AI00784B
B2716
FDIP24W
M271616
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PDF
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ADC1130
Abstract: ADC1131 HI508A HTS-0010 SHA1144 analog devices "902-2"
Text: Very High Speed ADSHM-5 2nd Source-Replaces All SHM-5 Series Fast 350ns Acquisition Time to ±0.01% Aperture Uncertainty 250ps ADSHM-5K Ultra Fast 250ns Acquisition Time to ±0.01% 100ns Acquisition Time to ±0.1% Wide 12MHz Bandwidth 300V|is Slew Rate Super Low 2nA Input Bias Current
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350ns
250ps
250ns
100ns
12MHz
HTS-0010
14-Bit
SHA1144
SHAU44
SHA1144.
ADC1130
ADC1131
HI508A
HTS-0010
SHA1144
analog devices "902-2"
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PYA28C16
Abstract: eeprom
Text: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional)
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PYA28C16
350ns
24-Pin
32-Pin
450x550
PYA28C16
EEPROM108
eeprom
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PDF
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PYA28C64
Abstract: eeprom
Text: PYA28C64 X 8K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time CMOS & TTL Compatible Inputs and Outputs
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PYA28C64
350ns
PYA28C64X
28-Pin
32-Pin
450x550
eeprom
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PDF
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Untitled
Abstract: No abstract text available
Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input
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2500Vrms
BM6103FV-C
BM6103FV-C
2500Vrms,
350ns,
180ns,
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12KV
Abstract: 2PF140 motorola 350NS
Text: RECTIFIER, 12kV, 225mA, 350ns January 7, 1998 1997 SEMTECH CORP. 2PF140 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, 12kV, 225mA, 350ns 2PF140 January 7, 1998 © 1997 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320
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Original
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225mA,
350ns
2PF140
12KV
2PF140
motorola 350NS
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PDF
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Untitled
Abstract: No abstract text available
Text: XL2865A 8K X 8 Electrically Erasable PROM PIN CONFIGURATION FEATURES 28 Pin PDIP Type "P" Package • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns , ■ 5 Volt-only Operation ■ Industrial Temperature Range Available XLE2865A ■ Fast Nonvolatile Write Cycle
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XL2865A
250ns,
300ns,
350ns,
450ns
XLE2865A)
200ns
XL2865A
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PDF
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2864A
Abstract: No abstract text available
Text: eXe L MICROELECTRONICS noC A A XLZO O H A M k n l.f' 8K X 8 Electrically Erasable PROM FE A TU R ES • Fast Read A ccess Tim es — 250ns, 300ns, 350ns, 450ns ■ 5 V o lt-o nly O peratio n Including W rite ■ ■ ■ Industrial T em p e ra tu re R ange A vailab le
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250ns,
300ns,
350ns,
450ns
200ns
XL2864A
XL2864A
2864A
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PDF
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1N914
Abstract: FDIP24W M2716
Text: M2716 NMOS 16K 2K x 8 UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM
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Original
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
1N914
FDIP24W
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PDF
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SM2716
Abstract: No abstract text available
Text: Æ T S C S -T H O M S O N M2716 M W & i( O T K !]D ( g S NMOS 16K (2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
SM2716
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PDF
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PYA28C256
Abstract: No abstract text available
Text: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs
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Original
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PYA28C256
350ns
28-Pin
32-Pin
450x550
PYA28C256
32Kx8
64-byte
EEPROM104
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PDF
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B2716
Abstract: FDIP24W M2716 m2716 dip M2716* eprom
Text: M2716 NMOS 16K 2K x 8 UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM
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Original
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
B2716
FDIP24W
m2716 dip
M2716* eprom
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PDF
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