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Toshiba America Electronic Components TRS12N65FB,S1Q DIODE ARRAY SIC 650V 6A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TRS12N65FB,S1Q	Tube	53		1	1 $6.71 10 $6.71 100 $3.708 1000 $2.82625 10000 $2.82625	Buy Now
Avnet Americas	TRS12N65FB,S1Q	Tube		24 Weeks	30	1 - 10 - 100 $2.64537 1000 $2.50971 10000 $2.50971	Buy Now
Mouser Electronics	TRS12N65FB,S1Q		131			1 $6.6 10 $6.43 100 $3.5 1000 $2.82 10000 $2.82	Buy Now
Rochester Electronics LLC HGT1S12N60C3 IGBT 600V 24A TO-262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGT1S12N60C3	Bulk			207	1 - 10 - 100 - 1000 $1.46 10000 $1.46	Buy Now
Rochester Electronics LLC HGT1S12N60B3 IGBT 600V 27A TO-262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGT1S12N60B3	Bulk			181	1 - 10 - 100 - 1000 $1.66 10000 $1.66	Buy Now
Toshiba America Electronic Components TRS12N65D,S1F DIODE ARRAY SCHOT 650V 6A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TRS12N65D,S1F	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC HGT1S12N60C3D IGBT 600V 24A TO-262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGT1S12N60C3D	Bulk			185	1 - 10 - 100 - 1000 $1.62 10000 $1.62	Buy Now

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S12N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
12n60c Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB Contextual Info: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS HGTG12N60C3DR, HGTP12N60C3DR, S12N60C3DRS CT ODU ODUCT	Original	G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB	PDF
Contextual Info: [ /Title HGTP 12N60 C3R, HGT1 S12N6 0C3RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBTs ) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch HGTP12N60C3R, S12N60C3RS T UCT ROD RODUC P E P T E E OL UT	Original	GTP12 HGTP12N60C3R, HGT1S12N60C3RS 12N60 S12N6	PDF
p12n60c3 Abstract: 4040 FAIRCHILD P12N60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 RHRP1560 S12N60C3 TA49123 Contextual Info: HGTP12N60C3, S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 4040 FAIRCHILD P12N60 HGT1S12N60C3S9A LD26 RHRP1560 S12N60C3 TA49123	PDF
P12N60C3 Abstract: HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 RHRP1560 S12N60C3 TA49123 p12n60 Contextual Info: HGTP12N60C3, S12N60C3, S12N60C3S Semiconductor 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description • 24A, 600V at TC = 25oC The HGTP12N60C3, S12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the	Original	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 150oC. 230ns 150oC P12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 RHRP1560 S12N60C3 TA49123 p12n60	PDF
Contextual Info: S12N65D SiC Schottky Barrier Diode S12N65D 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features 1 Forward DC current(Per Leg/Both Legs) IF(DC) = 6/12 A (2) Repetitive peak reverse voltage VRRM = 650 V	Original	TRS12N65D O-247	PDF
Contextual Info: HGTP12N60C3, S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC.	PDF
p12n60c3 Abstract: S12N60C3 RHRP1560 HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 TA49123 p12n60 P12N60C Contextual Info: HGTP12N60C3, S12N60C3, S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description • 24A, 600V at TC = 25oC The HGTP12N60C3, S12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the	Original	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 150oC. 230ns 150oC p12n60c3 S12N60C3 RHRP1560 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 TA49123 p12n60 P12N60C	PDF
p12n60c3 Abstract: TA49123 transistor equivalents for p12n60c3 p12n60 S12N60C3 HGTP12N60C3 RHRP1560 HGT1S12N60C3S HGT1S12N60C3S9A Contextual Info: HGTP12N60C3, S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have	Original	HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 TA49123 transistor equivalents for p12n60c3 p12n60 S12N60C3 RHRP1560 HGT1S12N60C3S9A	PDF
p12n60c3 Abstract: p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C Contextual Info: HARRIS HGTP12N60C3, S12N60C3, S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 F ea tu res Description • 24A, 600V at Tc = 25 °C The HGTP12N60C3, H G S12N60C3 and HG S12N60C3S are MOS gated high voltage switching devices combining the	OCR Scan	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S T1S12N60C3 T1S12N60C3S p12n60c3 p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C	PDF
Contextual Info: HGTP12N60C3, S12N60C3, S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT August 1995 Features Packages JEDEC TO-220AB EMITTER COLLECTOR GATE • 24A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 230ns at TJ = +150oC	Original	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S O-220AB 230ns 150oC O-262AA HGT1S12N60C3	PDF
Contextual Info: S12N65D SiC Schottky Barrier Diode S12N65D 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features 1 Forward DC current(Per Leg/Both Legs) IF(DC) = 6/12 A (2) Repetitive peak reverse voltage VRRM = 650 V	Original	TRS12N65D O-247	PDF
p12n60c3 Abstract: p12n60 HGTP12N60C3 S12N60C3 TA49123 HGT1S12N60C3S HGT1S12N60C3S9A LD26 RHRP1560 Contextual Info: HGTP12N60C3, S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 p12n60 S12N60C3 TA49123 HGT1S12N60C3S9A LD26 RHRP1560	PDF
p12n60c3 Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123 Contextual Info: i n t e HGTP12N60C3, S12N60C3S r r i i J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have	OCR Scan	HGTP12N60C3 HGT1S12N60C3S TA49123. HGTP12N60rporation p12n60c3 p12n60 HGT1S12N60C3S9A LD26 S12N60C3 TA49123	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF

p12n60c3 Abstract: S12N60C3 Contextual Info: HARRIS HGTP12N60C3, S12N60C3, S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1 9 9 7 Features Description • 24A, 600V at T c = 25°C The HGTP12N60C3, S12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the	OCR Scan	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 230ns p12n60c3 S12N60C3	PDF