S1230 Search Results

9114 static ram

Abstract: dallas ds1280 a17b 68-PIN DS1280 DS1280Q-68 TD1220
Contextual Info: » A L L A S SEMICONDUCTOR CORP 31E D B HblMlBO 0003*133 0 ES DAL O S 1280 • W toàia^ M M éa^ M ni iii ii ì r -iiiJL.V^-r ¿ « .,- Mt. -«h. . '.riti , , tM . \* ^ * 5 0~7 E i£ a « a 081280 DALLAS 3-Wire to Bytewide Converter Chip semiconductor

Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

Contextual Info: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC

Contextual Info: SUM55P06-19L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)d 0.019 at VGS = - 10 V - 55 0.025 at VGS = - 4.5 V - 48 Qg (Typ.) 76 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see

A8483

Contextual Info: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 e RDS(on) () (Max.) ID (A) 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 Qg (Typ.) 21 nC S • Load Switch for Smart Phones, Tablet PCs, and Mobile

BUF601

Contextual Info: B U R R - B R O W N <i [ MPC104 ] Wide-Bandwidth 2 X 1 VIDEO MULTIPLEXER FEATURES The M PC104 consists of two identical monolithic, integrated, open-loop buffer amplifiers, which are connected internally at the output. The bipolar comple­ mentary buffers form a unidirectional transmission

PJ068

Abstract: PJ-068 Switchcraft 228 MT344B Switchcraft 12b 2P1509 P15823 MT342B Y235 S1230
Contextual Info: Switchcraft Previous Page | Return to Index | Next Page 1/4" FLAT PLUG PHONE PLUGS 1. Series 220 2. Series 230 3. Series S230 4. No. 238 click here to download a schematic drawing you will need to have Adobe Acrobat installed on your system to do this http://www.switchcraft.com/products/jack-137.html (1 of 4) [2/9/2005 4:24:29 PM]

Contextual Info: S1230Y/AB DALLAS S1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or

HC12

Abstract: M68HC12 M68HC812A4 MC68HC912B32 MC68HC912D60 M68HC912D60 MCS912DP256
Contextual Info: Reference Guide For D–Bug12 Version 3.x.x A Debug Monitor For The MC68HC912D60 Microcontroller Written By Gordon Doughman Software Specialist 1.0 Introduction D–Bug12 has undergone considerable revision since the introduction of version 1.0.x for the M68HC812A4 EVB and version 2.x.x for the MC68HC912B32 EVB. Version 3.x.x of D–Bug12

allpro 88

Abstract: ALLPRO-88 BP-1200 checksum motorola 020000020000FC 62AB DL201 MPA1064KE Intel 4004 MPA17128
Contextual Info: ANxxxx Application Note Programming Large Configuration Files into Smaller Serial PROMs Prepared by Douglas M. Shade Motorola Applications Engineer Programming Large Configuration Files into Smaller Serial PROMs Introduction This application note describes methods for programming large configuration files into lower

VT8372

Abstract: schematic diagram lcd monitor chimei AMD AM2 motherboard schematic diagram intel g31 motherboard repair gigabyte g31 MOTHERBOARD SERVICE MANUAL ck 66 ul94v-0 lcd MHT2040T kingmax micro SD Card Mitsumi D353FUE g31 motherboard repair
Contextual Info: SERVICE MANUAL FOR 8381 BY: Valley.Hu Repair Technology Research Department /EDVD Jul.2003 8381 N/B Maintenance Contents 1. Hardware Engineering Specification - 3 1.1 Introduction - 3

intel chipset g31 motherboard repair

Abstract: l7251 mitac 8666 diode 25PH 800 PN800 intel g31 motherboard repair g31 motherboard repair CGR18650C PC709 VIA vt8237
Contextual Info: SERVICE MANUAL FOR 8666 BY: Star Meng Repair Technology Research Department /EDVD Apr.2005 / R01 8666 N/B Maintenance Contents 1. Hardware Engineering Specification ……………………………………………………………………… 4 1.1 Introduction ………………………………………………………………………………………………………………. 4

DS1230Y-200 DALLAS

Abstract: EEPROM 28256 DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85
Contextual Info: S1230Y/AB 256k Nonvolatile SRAM ww w.dalsem i.com PIN ASSIGNMENT FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

SI7615A

Abstract: SI7615ADN
Contextual Info: SPICE Device Model Si7615ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7478DP www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

73336

Contextual Info: SPICE Device Model Si7818DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7658ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

S-1010A

Abstract: S1200A S1010 S-12 A146 S-2111AW 10029A
Contextual Info: １０ mmでDIPピンコンパチブル。半透明平ノブ付きも登場！ DIP型ロータリコードスイッチ ROTARY CODED SWITCHES S-1000A/2000A 内部構造図 RoHS 指令対応 RoHS compliant INTERNAL STRUCTURE S-1000A / 2000A series ス イ

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

s12308

Contextual Info: SiHU7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

NPN Transistor PT7

Abstract: transistor pcr 606 j PHILIps computer monitor schematic b528 capacitor 47uF through hole PCR 606 J round shell connector XTAL 5V DIP8 HC12 M68EVB912BC32
Contextual Info: M68EVB912BC32/D1 October 1997 M68EVB912BC32 EVALUATION BOARD USER'S MANUAL MOTOROLA Ltd., 1997; All Rights Reserved Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 100494 FEATURES: DESCRIPTION: • 16,384-w ords x 4 -b it o rg a n iza tio n • A ddress a ccess tim e : 8 /1 0 /1 5n s (max.) • Low p o w e r d issip a tio n : 500m W (typ.) T h e ID T100494 is a 65,536-bit h ig h -sp ee d BiC E M O S ECL

S-1010A

Abstract: S-1030A S-1031A S-1011A s1000a copal S-1000A S-2010AW S-1110AW 1210a S-1011AW
Contextual Info: COPAL ELECTRONICS ROTARY CODED SWITCHES S-1000A/2000A INTERNAL STRUCTURE S-1000A / 2000A series RoHS compliant 7 1 5 6 4 2 3 • FEATURES ● Lead-free soldering ● Protection against dust and whole cleaning after soldering is possible ● Pin compatible with conventional DIP switches

1230Y

Contextual Info: D S 1230Y/A B DALLAS S1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile