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    S11108 Search Results

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    S11108 Price and Stock

    Samtec Inc ZSS-111-08-T-D-1117

    CONN HDR .100" 22POS
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    DigiKey ZSS-111-08-T-D-1117 Bulk 1
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    Mouser Electronics ZSS-111-08-T-D-1117
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    Newark ZSS-111-08-T-D-1117 Bulk 1
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    JRH Electronics ZSS-111-08-T-D-1117

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    JRH Electronics ZSS-111-08-L-D-1180

    CONN HEADER VERT 22POS 2.54MM
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    Samtec Inc ZSS-111-08-L-D-1180

    CONN HEADER VERT 22POS 2.54MM
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    DigiKey ZSS-111-08-L-D-1180 Bulk 1
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    Mouser Electronics ZSS-111-08-L-D-1180 36
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    Newark ZSS-111-08-L-D-1180 Bulk 1
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    Sager ZSS-111-08-L-D-1180 104 1
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    Samtec Inc ZSS-111-08-L-D-1157

    Conn Elevated Shrouded Header HDR 22 POS 2.54mm Solder ST Thru-Hole - Bulk (Alt: ZSS-111-08-L-D-115)
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    S11108 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S11108

    Abstract: high frequency linear cmos IMAGE SENSOR KMPDC0312EC high frequency line scan 2048 pixels array
    Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14


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    PDF S11108 S11108 SE-171 KMPD1112E06 high frequency linear cmos IMAGE SENSOR KMPDC0312EC high frequency line scan 2048 pixels array

    S11108

    Abstract: high frequency line scan 2048 pixels array KMPDC0366EB 74HC541 high frequency linear cmos IMAGE SENSOR high frequency line scan 2048 pixels sensor KMPDC0387EA KMPDC0312EC
    Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long active area effective active area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14 x 14 m.


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    PDF S11108 S11108 SE-171 KMPD1112E05 high frequency line scan 2048 pixels array KMPDC0366EB 74HC541 high frequency linear cmos IMAGE SENSOR high frequency line scan 2048 pixels sensor KMPDC0387EA KMPDC0312EC

    S11108

    Abstract: KMPDC0366EB 74HC541
    Text: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14


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    PDF S11108 S11108CMOS m2048 V1536 74HC541 LT1818 S11108 KMPDC0366EB 74HC541

    CH 89 A15A

    Abstract: No abstract text available
    Text: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14


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    PDF S11108 S11108ã KMPD1112J11 CH 89 A15A

    S11108

    Abstract: image 360 KMPDC0312EC KMPDC0319ED 1116S
    Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14


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    PDF S11108 S11108 SE-171 KMPD1112E07 image 360 KMPDC0312EC KMPDC0319ED 1116S

    Untitled

    Abstract: No abstract text available
    Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14


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    PDF S11108 S11108 KMPD1112E09

    Image sensors

    Abstract: ccd sensors
    Text: Image sensors 1 CCD image sensors 1-1 1-2 1-3 1-4 Structure and operating principle Characteristics How to use New approaches CHAPTER 05 6 Photodiode arrays with amplifiers 6-1 6-2 6-3 6-4 6-5 Features Structure Operating principle Characteristics How to use


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    PDF 14-Bit Image sensors ccd sensors

    C10500

    Abstract: No abstract text available
    Text: セレクションガイド 2013.11 イメージセンサ 幅 広 い 波 長 範 囲 に 対 応した 計 測 用 イメ ー ジ セ ン サ IMAGE SENSOR イメージセンサ 幅広い波長範囲に対応した 計測用イメージセンサ 浜 松ホトニクスは赤 外から可 視・紫 外・真 空 紫 外・


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    S11830-3344MF

    Abstract: No abstract text available
    Text: NEWS 01 2011 Solid state PRODUCTS PAGE 11 Thumb-sized “ultra-compact spectrometer” with VIS-NIR response SOLID STATE PRODUCTS PAGE 16 New developments for the MPPC ELECTRON TUBE PRODUCTS PAGE 21 H2D2 light sources L11788 series, L11789 series SYSTEMS PRODUCTS


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    PDF L11788 L11789 C11367 DE128228814 S11830-3344MF

    S11074

    Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
    Text: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground


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    PDF S11000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S11074 S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065

    SQR50N06-07L

    Abstract: No abstract text available
    Text: SQR50N06-07L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested


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    PDF SQR50N06-07L O-252 AEC-Q101 2002/95/EC SQR50N06-07L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. SQR50N06-07L

    S11108

    Abstract: C11208-01 C8841 H10570 Hamamatsu Photonics S11108 External Quantum Efficiency solar
    Text: NEWS 02 2009 LASER PRODUCTS PAGE 08 Gas detection: New Quantum Cascade Infrared Lasers SOLID STATE PRODUCTS PAGE 18 Infrared LED L10822, L10822-01, L10823, L10823-01 ELECTRON TUBE PRODUCTS PAGE 37 Flat panel PMT assemblies H10966A-100/H10966B-100 SYSTEMS PRODUCTS


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    PDF L10822, L10822-01, L10823, L10823-01 H10966A-100/H10966B-100 C11079-01 S11108 C11208-01 C8841 H10570 Hamamatsu Photonics S11108 External Quantum Efficiency solar

    Untitled

    Abstract: No abstract text available
    Text: SQR50N06-07L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested


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    PDF SQR50N06-07L O-252 AEC-Q101 2002/95/EC O-252 SQR50N06-07L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SQR50N06-07L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested


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    PDF SQR50N06-07L O-252 AEC-Q101 2002/95/EC O-252 SQR50N06-07L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQR50N06-07L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested


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    PDF SQR50N06-07L O-252 AEC-Q101 2002/95/EC SQR50N06-07L-GE3 11-Mar-11

    lcd 2004A

    Abstract: No abstract text available
    Text: 浜松ホトニクスの HOT な情報マガジン[ハマホット] 2009 夏 vol.4 発行元 〒430-8587 静岡県浜松市中区砂山町325-6 日本生命浜松駅前ビル TEL:053-452-2141 FAX:053-456-7889 http://jp.hamamatsu.com/ キリトリ線


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    Untitled

    Abstract: No abstract text available
    Text: 発行元 〒430-8587 静岡県浜松市中区砂山町325-6 日本生命浜松駅前ビル TEL:053-452-2141 FAX:053-456-7889 jp.hamamatsu.com キリトリ線 国内営業体制変更のご案内 POST CARD 料金受取人払郵便 浜北支店承認


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    C10500

    Abstract: linear CCD 512 TDI cmos image sensor
    Text: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide


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    PDF KAPD0002E12 C10500 linear CCD 512 TDI cmos image sensor

    Untitled

    Abstract: No abstract text available
    Text: イメージセンサ 1 CCDイメージセンサ 1-1 1-2 1-3 1-4 構造動作原理 特性 使い方 新たな取り組み 2 NMOSリニアイメージセンサ 6-1 6-2 6-3 6-4 6-5 特長 構造 動作原理 特性 使い方 7 InGaAsリニアイメージセンサ


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    PDF IS1-17,

    Untitled

    Abstract: No abstract text available
    Text: SQR40N10-25 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.029 ID (A) • TrenchFET Power MOSFET


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    PDF SQR40N10-25 O-252 AEC-Q101 2002/95/EC SQR40N10-25-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.