KMPDC0366EB Search Results

Contextual Info: CMOSリニアイメージセンサ S11639 高感度縦長画素の受光部を採用 縦長画素 14 x 200 m の受光部を採用した高感度CMOSリニアイメージセンサです。紫外域においても、高感度・高耐性 を実現しています。5 V単一電源で動作するため、安価な分光器に適しています。

Contextual Info: CMOS linear image sensor S11639 High sensitivity, photosensitive area with vertically long pixels The S11639 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels 14 x 200 m . Other features include high sensitivity and high resistance in the UV region. The S11639 operates from a single 5 V

S11108

Abstract: high frequency linear cmos IMAGE SENSOR KMPDC0312EC high frequency line scan 2048 pixels array
Contextual Info: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14

S11108

Abstract: high frequency line scan 2048 pixels array KMPDC0366EB 74HC541 high frequency linear cmos IMAGE SENSOR high frequency line scan 2048 pixels sensor KMPDC0387EA KMPDC0312EC
Contextual Info: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long active area effective active area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14 x 14 m.

S11108

Abstract: KMPDC0366EB 74HC541
Contextual Info: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14

Contextual Info: CMOS linear image sensor S11638 Achieves high sensitivity by adding an amplifier to each pixel The S11638 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14

Contextual Info: CMOS linear image sensor S11639 High sensitivity, photosensitive area with vertically long pixels The S11639 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels 14 x 200 m . Other features include high sensitivity and high resistance in the UV region. The S11639 operates from a single 5 V

CH 89 A15A

Contextual Info: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14

Contextual Info: CMOSリニアイメージセンサ S11638 画素ごとにアンプを内蔵することで高感度を実現 S11638は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 42

S11108

Abstract: image 360 KMPDC0312EC KMPDC0319ED 1116S
Contextual Info: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14

Contextual Info: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14

S11638

Abstract: linear uv photodiode array
Contextual Info: CMOS linear image sensor S11638 Achieves high sensitivity by adding an amplifier to each pixel The S11638 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14