Untitled
Abstract: No abstract text available
Text: CMOSリニアイメージセンサ S11639 高感度縦長画素の受光部を採用 縦長画素 14 x 200 m の受光部を採用した高感度CMOSリニアイメージセンサです。紫外域においても、高感度・高耐性 を実現しています。5 V単一電源で動作するため、安価な分光器に適しています。
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S11639
KMPD1136J05
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Untitled
Abstract: No abstract text available
Text: CMOS linear image sensor S11639 High sensitivity, photosensitive area with vertically long pixels The S11639 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels 14 x 200 m . Other features include high sensitivity and high resistance in the UV region. The S11639 operates from a single 5 V
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S11639
S11639
KMPD1136E04
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S11108
Abstract: high frequency linear cmos IMAGE SENSOR KMPDC0312EC high frequency line scan 2048 pixels array
Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14
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S11108
S11108
SE-171
KMPD1112E06
high frequency linear cmos IMAGE SENSOR
KMPDC0312EC
high frequency line scan 2048 pixels array
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S11108
Abstract: high frequency line scan 2048 pixels array KMPDC0366EB 74HC541 high frequency linear cmos IMAGE SENSOR high frequency line scan 2048 pixels sensor KMPDC0387EA KMPDC0312EC
Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long active area effective active area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14 x 14 m.
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S11108
S11108
SE-171
KMPD1112E05
high frequency line scan 2048 pixels array
KMPDC0366EB
74HC541
high frequency linear cmos IMAGE SENSOR
high frequency line scan 2048 pixels sensor
KMPDC0387EA
KMPDC0312EC
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S11108
Abstract: KMPDC0366EB 74HC541
Text: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14
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S11108
S11108CMOS
m2048
V1536
74HC541
LT1818
S11108
KMPDC0366EB
74HC541
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Untitled
Abstract: No abstract text available
Text: CMOS linear image sensor S11638 Achieves high sensitivity by adding an amplifier to each pixel The S11638 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14
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S11638
S11638
KMPD1130E04
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Untitled
Abstract: No abstract text available
Text: CMOS linear image sensor S11639 High sensitivity, photosensitive area with vertically long pixels The S11639 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels 14 x 200 m . Other features include high sensitivity and high resistance in the UV region. The S11639 operates from a single 5 V
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S11639
S11639
KMPD1136E03
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CH 89 A15A
Abstract: No abstract text available
Text: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14
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S11108
S11108ã
KMPD1112J11
CH 89 A15A
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Untitled
Abstract: No abstract text available
Text: CMOSリニアイメージセンサ S11638 画素ごとにアンプを内蔵することで高感度を実現 S11638は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 42
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S11638
S11638ã
KMPD1130J04
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S11108
Abstract: image 360 KMPDC0312EC KMPDC0319ED 1116S
Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14
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S11108
S11108
SE-171
KMPD1112E07
image 360
KMPDC0312EC
KMPDC0319ED
1116S
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Untitled
Abstract: No abstract text available
Text: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14
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S11108
S11108
KMPD1112E09
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S11638
Abstract: linear uv photodiode array
Text: CMOS linear image sensor S11638 Achieves high sensitivity by adding an amplifier to each pixel The S11638 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14
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S11638
S11638
KMPD1130E02
linear uv photodiode array
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