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    S11065 Price and Stock

    Bivar Inc SRS-1-1.065

    ROUND SPACER #4 PVC 27.05MM
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    DigiKey SRS-1-1.065 Bag 1,000
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    Newark SRS-1-1.065 Bulk 1,000
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    RS SRS-1-1.065 Bulk 1,000
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    ODU Steckverbindungssysteme Gmbh & Co Kg S11M07-0F1S110-6570

    ODU MEDI-SNAP PLUG, STY 1, SZ 1,
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    Mouser Electronics S11M07-0F1S110-6570
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    ODU Steckverbindungssysteme Gmbh & Co Kg S11M07-0F1S110-6520

    ODU MEDI-SNAP PLUG, STY 1, SZ 1,
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    Mouser Electronics S11M07-0F1S110-6520
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    ODU Steckverbindungssysteme Gmbh & Co Kg S11M07-0F1S110-6560

    ODU MEDI-SNAP PLUG, STY 1, SZ 1,
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    Mouser Electronics S11M07-0F1S110-6560
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    ODU Steckverbindungssysteme Gmbh & Co Kg S11M07-0F1S110-6580

    ODU MEDI-SNAP PLUG, STY 1, SZ 1,
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    DigiKey S11M07-0F1S110-6580 Bulk 1
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    Mouser Electronics S11M07-0F1S110-6580
    • 1 $9.89
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    S11065 Datasheets Context Search

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    Si4134DY-T1-E3

    Abstract: si4134 c065
    Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4134 c065 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4228DY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI4176DY

    Abstract: No abstract text available
    Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4176DY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4176DY PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4228DY-T1-E3 2002/95/EC 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 11-Mar-11 PDF

    si4176

    Abstract: SI4176DY
    Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4176DY-T1-E3 2002/95/EC 11-Mar-11 si4176 SI4176DY PDF

    4AB20

    Abstract: No abstract text available
    Text: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS


    Original     		Si4936CDY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 4AB20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4178DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4178DY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si1424

    Abstract: No abstract text available
    Text: New Product Si1424EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.033 at VGS = 4.5 V 4 0.038 at VGS = 2.5 V 4 0.045 at VGS = 1.8 V 4 0.070 at VGS = 1.5 V 3 VDS (V) 20 Qg (Typ.) 6 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si1424EDH 2002/95/EC OT-363 SC-70 Si1424EDH-T1-GE3 11-Mar-11 si1424 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: DG2725 Vishay Siliconix Low Voltage, 1.2 , Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2725 is a CMOS Dual SPDT Dual Single Pole Double Throw analog switch. It features low on-resistance of 0.7  at 3 V power supply, fast switching speed, and low


    Original     		DG2725 DG2725 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4


    Original     		Si4276DY-T1-E3 2002/95/EC 150hay 11-Mar-11 SI4276DY PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4804CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.022 at VGS = 10 V 8 0.027 at VGS = 4.5 V 7.9 • • • • Qg (Typ.) 7 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested


    Original     		Si4804CDY-T1-E3 2002/95/EC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: DG2725 Vishay Siliconix Low Voltage, 1.2 , Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2725 is a CMOS Dual SPDT Dual Single Pole Double Throw analog switch. It features low on-resistance of 0.7  at 3 V power supply, fast switching speed, and low


    Original     		DG2725 DG2725 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4


    Original     		Si4276DY-T1-E3 2002/95/EC 25electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4804CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.022 at VGS = 10 V 8 0.027 at VGS = 4.5 V 7.9 • • • • Qg (Typ.) 7 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested


    Original     		Si4804CDY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4532CDY Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.047 at VGS = 10 V 6.0 0.065 at VGS = 4.5 V 5.2 VDS (V) N-Channel 30 P-Channel - 30 0.089 at VGS = - 10 V - 4.3 0.140 at VGS = - 4.5 V - 3.4 Qg (Typ.)


    Original     		Si4532CDY 2002/95/EC Si4532CDY-T1-Gelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si4532cdy-t1-ge3

    Abstract: No abstract text available
    Text: Si4532CDY Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.047 at VGS = 10 V 6.0 0.065 at VGS = 4.5 V 5.2 VDS (V) N-Channel 30 P-Channel - 30 0.089 at VGS = - 10 V - 4.3 0.140 at VGS = - 4.5 V - 3.4 Qg (Typ.)


    Original     		Si4532CDY 2002/95/EC Si4532CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1424EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 20 0.033 at VGS = 4.5 V 4 0.038 at VGS = 2.5 V 4 0.045 at VGS = 1.8 V 4 0.070 at VGS = 1.5 V 3 Qg (Typ.) 6 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si1424EDH 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4532CDY Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.047 at VGS = 10 V 6.0 0.065 at VGS = 4.5 V 5.2 VDS (V) N-Channel 30 P-Channel - 30 0.089 at VGS = - 10 V - 4.3 0.140 at VGS = - 4.5 V - 3.4 Qg (Typ.)


    Original     		Si4532CDY 2002/95/EC Si4532CDY-T1emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		Si1016CX 2002/95/EC 11-Mar-11 PDF

    MO-193-C

    Abstract: No abstract text available
    Text: Si3812DV Vishay Siliconix N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A)


    Original     		Si3812DV 2002/95/EC Si3812DV-T1-GE3 11-Mar-11 MO-193-C PDF

    si4276

    Abstract: SI4276DY
    Text: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4


    Original     		Si4276DY-T1-E3 2002/95/EC 150trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4276 SI4276DY PDF