SI1016CX Search Results
SI1016CX Price and Stock
Vishay Siliconix SI1016CX-T1-GE3MOSFET N/P-CH 20V SC89 |
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SI1016CX-T1-GE3 | Digi-Reel | 19,301 | 1 |
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SI1016CX-T1-GE3 | Bulk | 3,000 |
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Vishay Intertechnologies SI1016CX-T1-GE3MOSFETs 20V Vds 8V Vgs SC89-6 N&P PAIR |
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SI1016CX-T1-GE3 | 74,504 |
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SI1016CX-T1-GE3 | 21,000 | 3,000 |
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SI1016CX-T1-GE3 | 21,000 | 14 Weeks | 3,000 |
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SI1016CX-T1-GE3 | Cut Tape | 34,079 | 5 |
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SI1016CX-T1-GE3 | 513 |
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SI1016CX-T1-GE3 | 410 |
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SI1016CX-T1-GE3 | Reel | 141,000 | 3,000 |
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SI1016CX-T1-GE3 | 2,480 | 1 |
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SI1016CX-T1-GE3 | 16 Weeks | 3,000 |
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SI1016CX-T1-GE3 | Cut Tape | 3,000 | 0 Weeks, 1 Days | 5 |
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SI1016CX-T1-GE3 | 42,000 | 15 Weeks | 3,000 |
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SI1016CX-T1-GE3 | 33,000 | 1 |
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SI1016CX-T1-GE3 | 40,282 |
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Vishay BLH SI1016CX-T1-GE3 |
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SI1016CX-T1-GE3 | 320 | 13 |
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Vishay Intertechnologies SI1016CXT1GE3AVAILABLE EU |
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SI1016CXT1GE3 | 31,727 |
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Others SI1016CXT1GE3AVAILABLE EU |
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SI1016CXT1GE3 | 4,500 |
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SI1016CX Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI1016CX-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V SC89-6 | Original |
SI1016CX Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches |
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Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si1016CX_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si1016CX AN609, 1333u 4747u 1949m 1247m 28-Mar-11 | |
Contextual Info: SPICE Device Model Si1016CX www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V |
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Si1016CX 2002/95/EC 11-Mar-11 | |
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V |
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Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V |
Original |
Si1016CX 2002/95/EC 11-Mar-11 | |
Contextual Info: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches |
Original |
Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si1016CX
Abstract: si1016x-t1-ge3 SI1016X
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Si1016CX Si1016X SC-89 Si1016CX-T1-GE3 Si1016X-T1-GE3 21-Apr-11 | |
SI1016CX
Abstract: sot-563 MOSFET D1 SI-101
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Si1016CX 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 sot-563 MOSFET D1 SI-101 | |
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V |
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Si1016CX 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Electrical Specifications Subject to Change LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater |
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LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead 3350p com/LTC3350 | |
Sanyo supercapacitors
Abstract: maxwell balancing
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LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead com/LTC3350 3350f Sanyo supercapacitors maxwell balancing | |
Contextual Info: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors |
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LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead com/LTC3350 3350fa | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |