Untitled
Abstract: No abstract text available
Text: BS870 DMOS Transistors N-Channel D SOT-23 G .122 (3.1) .110 (2.8) .016 (0.4) S Top View Mounting Pad Layout SOT-23 .056 (1.43) .052 (1.33) 3 1 .007 (0.175) .005 (0.125) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) 2 .037(0.95) .037(0.95)
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Original
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BS870
OT-23
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002 DMOS Transistors N-Channel D SOT-23 G .122 (3.1) .110 (2.8) .016 (0.4) Top View S .056 (1.43) .052 (1.33) 3 1 2 0.037 (0.95) .007 (0.175) .005 (0.125) 0.037 (0.95) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) .037(0.95) .037(0.95)
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Original
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2N7002
OT-23
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: BS850 DMOS Transistors P-Channel D G SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) S Top View Mounting Pad Layout SOT-23 .056 (1.43) .052 (1.33) 3 1 .007 (0.175) .005 (0.125) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) 2 .037(0.95) .037(0.95)
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Original
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BS850
OT-23
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: N AUER P H I L I P S / D I S C R E T E m bt.S3T31 Q O O T S H S 4 H fl?D D ^ 2 f ]-Q ~ LSD TRANSISTORS ip fn H ; Vj t p ' Vs t- J* fA * ' ^ NF (dB) Outline Drawing 3 2.5 — TO-122 TO-122 TO-122 TO-122 TO-122 TO-122 (MHz) eb (PP) Outline Drawing 200 200
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OCR Scan
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S3T31
O-122
2NL930
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PDF
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TIC 122 Transistor
Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
Text: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32
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OCR Scan
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023SbO
BC-121
blu122,
BC123
0235bOS
QQQ41Q3
BC121.
BC122,
TIC 122 Transistor
bc 147 B transistor
FOR TRANSISTOR BC 149 B
BC 148 TRANSISTOR
transistor 45 f 122
NPN transistor bc 148
transistor bc 146
BC 148 L
transistor bc 148
transistor BC 157
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PDF
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BFS17
Abstract: BFS17W
Text: • bb53^31 0a252bb 122 ■ APX P h ilip s S e m icon d u inary sp ecification NPN 1 GHz wideband transistor BFS17W N AUER PHILIPS/ DIS CRETE DESCRIPTION b7E PINNING Silicon NPN transistor in a plastic
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OCR Scan
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0a252bb
BFS17W
OT323
BFS17W
BFS17.
MBC670
OT323.
BFS17
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PDF
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JD127
Abstract: MJ012 6AI diode mj01
Text: rz S 7 “ 7# G S - T H O M S O M JD 122 M JD 127 N 6ai»igS lLlliSTI*§iMBeS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS < INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE . SURFACE-MOUNTING TO-252 DPAK
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OCR Scan
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O-252
TIP122
TIP127
MJD122
MJD127
JD127
MJ012
6AI diode
mj01
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PDF
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fr91a
Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
Text: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72
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OCR Scan
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BFG96
BFP96
BFP505
BFP520
BFP540
BFQ33C
BFQ63
BFQ65
BFQ66
BFQ161
fr91a
philips bfq
FQ235a
t122 25 3
FQ262a
fr90a
122e
BFR134
t122 25 10
t122 25 72
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PDF
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IP122
Abstract: transistor darlington TIP-120 tip122c TIP120
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122
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OCR Scan
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TIP120/121/122
TIP125/126/127
TIP120
TIP121
TIP122
IP122
transistor darlington TIP-120
tip122c
TIP120
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PDF
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Untitled
Abstract: No abstract text available
Text: ! HARRIS SEMICON] SECTOR File Number 2332 SbE D • 4302571 0D4G5fl7 122 H H A S 2N6547 7=35 - / 9 15-Ampere Power-Switching Transistor Feature*: TERM INAL DESIGNATION ■ 700% High temperature tested for 100° C parameters ■Fast switching speed ■High voltage rating V'c e x = 450V
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OCR Scan
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2N6547
15-Ampere
2N6547
LI3Q2271
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PDF
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TIP 122 transistor
Abstract: transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C o m p le m e n t lo T IP I 25/126/127 ABSOLUTE MAXIMUM RATINGS i C haracteristic S ym bol C o lle c to r-B a s e V o lta g e : TIP120 R ating 60
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OCR Scan
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TIP120
TIP121
TIP120/121/122
TIP 122 transistor
transistor tip 122
tip 120
tip 122
transistor darlington TIP-120
IP122
TIP 21 transistor
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PDF
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02n60
Abstract: JD127
Text: motorola sc x s t r s /r 12E D • I b3b7E54 GOflSSb? t f | 'T 1 3 3 - / 2 ? 7”-33-3/ MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 122 PNP M JD 127 Com plem entary Darlington Pow er Transistors DPAK For Surface M ount A pplications Designed for general purpose am plifier and low speed switching applications.
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OCR Scan
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b3b7E54
120-TIP
TIP125-T1P127
b3b72S4
MJD122
MJD127
02n60
JD127
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PDF
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TDA 5331
Abstract: tda 2222 t06 sot 23 TDA 7283 capacitor 224 BLV33 0049543 SOT147
Text: N AMER P H I L I P S / D I S C R E T E bTE D m bbSBIBl QDBñTñS 122 BLV33 IAPX V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended for use in linear v .h .f. amplifiers for television transmitters and transposers. Diffused emitter ballasting resistors and the application of gold sandwich
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OCR Scan
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bb53131
BLV33
7ZB3786
7Z83785
7Z83784
TDA 5331
tda 2222
t06 sot 23
TDA 7283
capacitor 224
BLV33
0049543
SOT147
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PDF
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CNY 17-2 optocoupler
Abstract: GE cny17 CNY 17-1 siemens opto coupler siemens n23f GE opto detector siemens CNY17-2
Text: SIEMENS CMPN TS t OPTO MME 1 • fl23b32b 0004177 S BI SI EX SIEM EN S CNY17 SER IES SINGLE CHANNEL PHOTOTRANSISTOR OPTOCOUPLER - H l- 2 3 Pa cka ge D im e nsions in In ch es mm xrniti ■343(17) .*»(»«) .1 #(3J) .130(33) 1 T~ r \ " o- rSS .122(3.1) 3
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OCR Scan
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fl23b32b
CNY17
CNY17-2
NY17-4
CNY 17-2 optocoupler
GE cny17
CNY 17-1 siemens
opto coupler siemens
n23f
GE opto detector
siemens CNY17-2
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PDF
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IRFD121
Abstract: TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120
Text: tyvvys S IRFD120, IRFD121, IRFD 122, IRFD 123 S e m ico n d ucto r y y 1.3A and 1.1 A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1 A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and
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OCR Scan
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IRFD121,
TB334
IRFD121
TA17401
IRFD120
IRFD122
IRFD123
TB334
ES36
rfd12
RFD120
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PDF
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diode sy 710
Abstract: sy 710 diode FN121 ufn120 V01T
Text: POWER MOSFET TRANSISTORS UFN120 100 Volt, 0.3 Ohm N-Channel 122 U F N 123 UFN FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • N o Second Breakdown • Excellent T em perature Stability D ESCRIPT IO N The Unitrode power M O S F E T design utilizes the m ost advanced technology available.
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OCR Scan
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UFN120
UFN121
UFN122
UFN123
diode sy 710
sy 710 diode
FN121
ufn120
V01T
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PDF
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DIODE ITT 310
Abstract: OC70P2 transistor 1p3
Text: c*o OPTOELECTRONICS |* _ PH O TO TR A N SISTO R O P T IC A L IN T E R R U P T E R S W IT C H ES •Q £ h* .312 7.83 .j (- 1 2 4 (3 151 J-.1P3 ¡2.6) NOM .122(3.10) I T1 C ia p Ù o e r îiii'e Pai s W itt! ' ■/JniU' M u m b i; tm in . ._££>/S e iì a s .,
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OCR Scan
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H21A1
C70P1
C70P2
DIODE ITT 310
OC70P2
transistor 1p3
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PDF
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transistor s0014
Abstract: S0014
Text: SIEMENS AKTIENGESEL LSCH AF ISIEG fl23SbOS 00272flb b 47E D SFH 601G SERIES SIEM EN S PHOTOTRANSiSTOR OPTOCOUPLER -=^-6 3 Package Dimensions in Inches mm 1 343ÍB71 3»(BS) 138(3.5) 130(33) - Ï - (0 5) f Ita 142(36) 122(3 I) 1 E Œ E 11 H " ( 2 $4) Spaong
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OCR Scan
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fl23SbOS
00272flb
CATH00E
transistor s0014
S0014
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PDF
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Untitled
Abstract: No abstract text available
Text: [ s O OPTOELECTRONICS I— PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHES ? D EÌ ? + ►j T£4- : 3 15- r 103 :2 6 NCM 122 2 l 0 1 1 t 28-J 17 A p ertu re Test M ax W id th C o n d itio n s ’ c (ONI (m A b v ceo W id th (V) R a tin g Num ber (m m ) L E D /S en so r
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OCR Scan
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H21A1
M0C70P)
M0C70P:
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PDF
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1RFD123
Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Text: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*
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OCR Scan
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IRFD120/121/122/123
12OR/121R/122R/123R
IRFD120,
IRFD121,
IRFD122,
IRFD123
IRFD120R,
IRFD121R,
IRFD122R,
IRFD123R
1RFD123
IRFD
123R
fd120
IRFD 120
IRFD 123
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PDF
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LM322N
Abstract: transistor t128 LM2905 LM3905 Dearborn Electronics 28V relay LIMING relay H10C LM122 LM122H
Text: LM122/LM322/ LM3905 N a t i o n a l S e m i c o n d u c t o r LM 122/LM322/LM3905 Precision Timers General Description The LM122 series are precision timers that offer great ver satility with high accuracy. They operate with unregulated supplies from 4.5V to 40V while maintaining constant timing
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OCR Scan
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LM122/LM322/LM3905
LM122
TL/H/7768-30
tl/h/7768-31
TL/H/7768-32
TL/H/7768-33
bSG1124
LM322N
transistor t128
LM2905
LM3905
Dearborn Electronics
28V relay
LIMING relay
H10C
LM122H
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PDF
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BC 148 transistor
Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
Text: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32
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OCR Scan
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023SbOS
BC1211)
BC-121
Q60203-Q60203-Q60203-Q60203-Q60203-Q60203
Q60203-Q60203
Q60203
bc121.
bc122,
bc123
BC 148 transistor
transistor BC 147
NPN transistor bc 148
bc 147 transistor
of transistor bc 148
bc 148 npn transistor
S1000 Siemens
8C121
transistor bc 148
bc 149 transistor
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PDF
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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OCR Scan
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PDF
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MC1112
Abstract: LTED MD1122 MD11 MD1120 MD1120F MD1121 MD1127 MQ1120
Text: MDI 120, MDI 120F SILICON MDI121 MDI 122 MQ1120 MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed fo r use as d iffe r e n tia l a m p lifie rs , dua l general-purpose a m p lifie rs, f r o n t end d e te c to rs and te m p e ra tu re com pensa tion
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OCR Scan
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MD1120,
MD1120F
MD1121
MD1122
MQ1120
MD1120
MD1120F
MDT121
MD1122)
MC1112
LTED
MD11
MD1127
MQ1120
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PDF
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