RJP60D Search Results

RJP60D Result Highlights (4)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJP60D0DPP-M0#T2		Renesas Electronics Corporation	IGBT for Inverter Applications, TO-220FL, /Tube
RJP60D0DPM-00#T1		Renesas Electronics Corporation	IGBT for Inverter Applications, TO-3PFM, /Tube
RJP60D0DPE-00#J3		Renesas Electronics Corporation	IGBT for Inverter Applications, LDPAK(S)-(1), /Embossed Tape
RJP60D0DPK-00#T0		Renesas Electronics Corporation	IGBT for Inverter Applications, TO-3P, /

RJP60D Price and Stock

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Renesas Electronics Corporation RJP60D0DPE-00-J3 IGBT 600V 45A LDPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP60D0DPE-00-J3	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.4125 10000 $1.4125	Buy Now
	RJP60D0DPE-00-J3	Cut Tape	21		1	1 $3.45 10 $2.378 100 $2.378 1000 $2.378 10000 $2.378	Buy Now
	RJP60D0DPE-00-J3	Digi-Reel			1	1 $3.45 10 $2.378 100 $2.378 1000 $2.378 10000 $2.378	Buy Now
Renesas Electronics Corporation RJP60D0DPP-M0-T2 IGBT 600V 45A TO220FL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP60D0DPP-M0-T2	Tube	4		1	1 $3.17 10 $3.17 100 $3.17 1000 $3.17 10000 $3.17	Buy Now
Rochester Electronics LLC RJP60D0DPK-01-T0 RJH60D0 - INSULATED GATE BIPOLAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP60D0DPK-01-T0	Bulk			135	1 - 10 - 100 - 1000 $2.24 10000 $2.24	Buy Now
Renesas Electronics Corporation RJP60D0DPK-00-T0 IGBT 600V 45A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP60D0DPK-00-T0	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation RJP60D0DPM-00-T1 IGBT 600V 45A TO3PFM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP60D0DPM-00-T1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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RJP60D Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJP60D0DPE-00#J3		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 122W LDPAK		Original	PDF
RJP60D0DPK-00#T0		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO-3P		Original	PDF
RJP60D0DPM-00#T1		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO-3PFM		Original	PDF
RJP60D0DPP-M0#T2		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 35W TO-220FL		Original	PDF

RJP60D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)	Original	PDF	RJP60D0DPM R07DS0088EJ0200 PRSS0003ZA-A impeda9044
rjp60d Abstract: RJp60 rjp60d0 R07DS0166EJ0100 RJP60D0DPK PRSS0004ZE-A SC-65 Silicon N Channel IGBT HIGH SPEED rjp6 JEITA Text: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60D0DPK R07DS0166EJ0100 PRSS0004ZE-A temperature9044 rjp60d RJp60 rjp60d0 R07DS0166EJ0100 RJP60D0DPK PRSS0004ZE-A SC-65 Silicon N Channel IGBT HIGH SPEED rjp6 JEITA
rjp60d Abstract: No abstract text available Text: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)	Original	PDF	RJP60D0DPM R07DS0088EJ0200 PRSS0003ZA-A rjp60d
rjp60d Abstract: No abstract text available Text: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60D0DPK R07DS0166EJ0300 PRSS0004ZE-A rjp60d
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60D0DPE R07DS0172EJ0100 PRSS0004AE-B Junctio9044
RJP60D0DPP-M0 Abstract: No abstract text available Text: Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60D0DPP-M0 R07DS0173EJ0100 PRSS0003AF-A) O-220FL) RJP60D0DPP-M0
rjp60d0dpp Abstract: RJP60D0DPP-M0 Text: Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60D0DPP-M0 R07DS0173EJ0100 PRSS0003AF-A) O-220FL) rjp60d0dpp RJP60D0DPP-M0
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60D0DPK R07DS0166EJ0200 PRSS0004ZE-A
rjp60d Abstract: No abstract text available Text: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60D0DPK R07DS0166EJ0300 PRSS0004ZE-A rjp60d
30g 122 igbt Abstract: rjp60d RJp60 RJP60D0DPE-00-J3 rjp6 Text: Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJP60D0DPE R07DS0172EJ0100 PRSS0004AE-B impedanc9044 30g 122 igbt rjp60d RJp60 RJP60D0DPE-00-J3 rjp6
rjp60d Abstract: RJP60D0DPM-00-T1 RJp60 RJP60D0DPM TO-3PF PRSS0003ZA-A rjp60d0 R07DS0088EJ0100 Text: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)	Original	PDF	RJP60D0DPM R07DS0088EJ0100 PRSS0003ZA-A rjp60d RJP60D0DPM-00-T1 RJp60 RJP60D0DPM TO-3PF PRSS0003ZA-A rjp60d0 R07DS0088EJ0100
RJH60F7 Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608 Text: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units	Original	PDF	RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
RJH60F7 Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to	Original	PDF	RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	PDF	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	PDF	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1