R07DS0088EJ0200 Search Results
R07DS0088EJ0200 Datasheets Context Search
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Contextual Info: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C) |
Original |
RJP60D0DPM R07DS0088EJ0200 PRSS0003ZA-A impeda9044 | |
rjp60dContextual Info: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C) |
Original |
RJP60D0DPM R07DS0088EJ0200 PRSS0003ZA-A rjp60d |