RAS 2110 Search Results

Contextual Info: i'jr VITELIC V53C100A FAMILY HIGH PERFORMANCE, LOW POWER 1M X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C100A 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 35 ns 40 ns 45 ns Max. CAS Access Time, (tCAC)

V53C104

Contextual Info: M O S E L - V IT E L i e V53C104F HIGH PERFORMANCE, LOW POWER 256K X 4 B IT FA ST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C104F Max. RAS Access Time, tRAC PRELIMINARY 60/60L 70/70L 80/80L 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns

Contextual Info: M O S E L V iT E U C V53C104N HIGH PERFORMANCE, 3.3 VOLT 256K X 4 B IT FA S T PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C104N 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 35 ns 40 ns 45 ns

semikron SKFT 150

Contextual Info: 3bE D : SEMIKRON INC • a i 3 bb?l Q Q Q 2 3 5G S M S E K G -ras-^ Vdrm V rrm Tv| = 125 °C Itrms (maximum values for continuous operation) 350 A 350 A Itav (sin. 180; Tease = 76°C; 50 Hz) 150 A 150 A V US 800 15 20 SKFT 150/08 DS SKFT 150/08 DT SKFH 150/08 DS

Contextual Info: M O S E L V fT E L iC V53C 104N H IG H PER FO RM A N CE, 3 .3 VO LT 2 5 6 K X 4 B IT F A S T P A G E M O D E C M O S D Y N A M IC R A M H IG H P E R F O R M A N C E V 5 3 C 1 0 4 N Max. RAS Access Time, ' RAC Max. Column Address Access Tim e, tCAA 6 0 /6 0 L

M5M448000-6

Contextual Info: MITSUBISHI LSIs M5M44800CJ,TP-5,-6,-7, -5S,-6S,-7S FAST PAGE MODE 4194304-BIT 524288-WORD BY 8-BIT DYNAMIC RAM D E S C R IP TIO N PIN C O N F IG U R A T IO N (T O P VIEW ) This is a family ol 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for largecapacity memory system s where high speed, low power

Contextual Info: MT4C1664/5 64K X 16 D R AM MICRON DRAM 64K x 16 DRAM FAST PAGE MODE • Industry standard xl6 pinouts, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V±10% power supply • Low power, 3mW standby; 225mW active, typical

Contextual Info: MITSUBISHI LS Is DRAM MODULE M H 1 M 3 2 B Y J - 5 ,-6 ,-7 / M H 1 M 3 2 B N Y J - 5 ,-6 , - 7 FAST PAGE MODE 33554432-BIT (1048576-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH1M32BYJ/BNYJ is 1048576-word x 32-bit dynamic PIN CONFIGURATION (TOP VIEW) (Single side]

Contextual Info: M IC R O N MT8C36256 DRAM MODULE 256K X 36 DRAM FEATURES OPTIONS DRAM MODULE PIN ASSIGNMENT (Top View • Industry standard pin-out in a 72-pin single-in-line package • High performance CMOS silicon gate process. • Single 5V±10% power supply • All inputs, outputs and clocks are fully TTL and

M514256B

Abstract: *m514256B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM514256B MCM51L4256B 256K x 4 Bit CMOS Dynamic RAM Page Mode The M C M 514256B is a 0.8n C M OS high-speed dynam ic random access memory. It is organized as 262,144 fo u r-bit words and fabricated w ith C M OS silicon-gate pro­

Contextual Info: MICRON TECHNOLOGY INC b i l l 5 4e! 0QG1031 7 14E » . W^jjgg T-¿/6-Z3 -/ 7 256K X 36 DRAM DRAM MODULE FEATURES PIN ASSIGNMENT Top View • Industry standard pin-out in a 72-pin single-in-line package • High performance CMOS silicon gate process. • Single 5V±10% power supply

Contextual Info: KM41C4000AL CMOS DRAM 4 M X 1 Bit C M O S Dynamic R AM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A cce ss Memory. Its design is optimized for high perform ance applications

DM110

Contextual Info: MDM11000T/V/G/J-10/12/15 Issue 1.0 July 1989 MDM11000-T/V/G/J 1Mx 1 Monolithic c m o s d r a m ADVANCE PRODUCT INFORMATION 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Pin Definition Package Type: T.'V'.'G'.'J' Row Access Times of 100/120/150 nS High density 300mil DIP Package

N MT42C8255

Abstract: micron DRAM
Contextual Info: M T42C8255 256K X 8 VR AM UIICRON VRAM 256K x 8 DRAM WITH 512 x 8 SAM • • • • • • • • • • • PIN ASSIGNMENT (Top View Industry-standard pinout, tim ing and functions High-perform ance, CM O S silicon-gate process Single +5V ±10% power supply

Contextual Info: MITSUBISHI LSIs M5M41000BPJ,L,VP,RV-7,-8,-10 FÄST PAGE M 0DE7 1048576-BIT 1048S76-W 0RD BY 1-BIT DYNAMIC RAM DESCRIPTION This is a fa m ily o f 1048576-word by 1-bit dynamic RAMs, fabricated w ith the high performance CMOS process, and is ideal fo r large-capacity memory systems where high

Contextual Info: V'TS’.T'SWf LS's M5M44258BP,J,L-7-»,H0 STATIC COLUMN MODE 1 0 4 8 S 7 6 -B IT 2 6 2 1 4 4 -W O R D B Y 4-BIT DYNAM IC RAM D ESC R IP T IO N This is a fam ily of 262144-word by 4-bit dynam ic RAM s, fabricated with the high performance CM OS process, and

DDR3 DIMM 240 pinout

Abstract: K4B1G0846B Design Guide for DDR3-1066 M393B5170EH1-CF8 DDR3 DIMM K4B1G0846B-HC M393B5170EH1 ddr3 RDIMM pinout DDR3 RDIMM samsung m393
Contextual Info: DDR3 SDRAM Registered DIMM DDR3 SDRAM Specification 240pin Registered DIMM based on 1Gb E-die 72-bit ECC 78FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

sem 2107

Abstract: RT/IC sem 2107
Contextual Info: MT42C8255 256K X 8 VRAM |U |IC=RO N VRAM 256K X 8 DRAM WITH 512 X 8 SAM • • • • • • • • • • • Industry-standard pinout, tim ing and functions High-perform ance, CM OS silicon-gate process Single +5V ±10% power supply Inputs and outputs are fully TTL compatible

2107 DRAM

Contextual Info: ADVANCE MT4LC8M8E1/B6 8 MEG X 8 DRAM I^ IIC Z R O N 8 MEG X 8 DRAM 3.3V, FAST PAGE MODE FEATURES • Single +3.3V ±0.3V pow er supply • Industry-standard x8 pinout, timing, functions and packages • 13 row-addresses, 10 column-addresses El or 12 row-addresses, 11 column-addresses (B6)

K4B2G0846C-HC

Abstract: DDR3 RDIMM samsung FBGA DDR3
Contextual Info: Rev. 1.01, Dec. 2010 M393B5773CH0 M393B5273CH0 M393B5270CH0 M393B1K70CH0 M393B1K73CH0 M393B2K70CM0 240pin Registered DIMM based on 2Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

Contextual Info: Rev. 1.01, Dec. 2010 M393B5773CH0 M393B5273CH0 M393B5270CH0 M393B1K70CH0 M393B1K73CH0 M393B2K70CM0 240pin Registered DIMM based on 2Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

MB8101

Abstract: MB81C1001-10 RBS 2106 equivalent RBS 2107
Contextual Info: February 1990 Edition 3.0 FUJITSU DATA SHEET MB81C1001-70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe

Contextual Info: Rev. 1.01, Jan. 2010 M393B5773CH0 M393B5273CH0 M393B5270CH0 M393B1K70CH0 M393B1K73CH0 M393B2K70CM0 240pin Registered DIMM based on 2Gb C-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

M393B5170

Abstract: M393B5170FH0 DDR3 DIMM 240 pinout M393B5670FH0 M393B2873FH0 DDR3 RDIMM SPD JEDEC DDR3L 78FBGA M393B5673FH0 SSTL-15
Contextual Info: Rev. 1.01, Jan. 2010 M393B2873FH0 M393B5673FH0 M393B5670FH0 M393B5173FH0 M393B5170FH0 240pin Registered DIMM based on 1Gb F-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND