MT4C1664
Abstract: No abstract text available
Text: MICRO N T E C H N O L O G Y INC 5SE » • blllSLtT 00044fl5 7T3 ■ MT4C1664/5 L 64Kx 16 DRAM MICRON B URN TECHNOLOGY INC _ ; T ' - a t - z v n DRAM 64K X 16 DRAM LOW POWER EXTENDED REFRESH • Industry standard x l6 pinouts, timing, functions
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00044fl5
MT4C1664/5
MT4C1664
MT4C1665
225mW
125ns
MT4C1664/5L
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Untitled
Abstract: No abstract text available
Text: MT4C1664/5 L 64K X 16 DRAM I^ IIC R O N 64K x 16 DRAM DRAM LOW POWER EXTENDED REFRESH FEATURES • Industry standard x l6 pinouts, timing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply • All device pins are fully TTL compatible
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MT4C1664/5
MT4C1664
MT4C1665
225mW
125jxs
40-Pin
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Untitled
Abstract: No abstract text available
Text: MT4C1664/5 64K X 16 D R AM MICRON DRAM 64K x 16 DRAM FAST PAGE MODE • Industry standard xl6 pinouts, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V±10% power supply • Low power, 3mW standby; 225mW active, typical
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MT4C1664/5
225mW
256-cycle
MT4C1664
MT4C1665
40-Pin
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1664L
Abstract: No abstract text available
Text: MT4C1664/5 L 64K X 16 DRAM MICRON DRAM 6 4 K X 16 DRAM LOW POWER EXTENDED REFRESH PIN ASSIGNMENT (Top View • Industry standard x l6 pinouts, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% pow er supply
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MT4C1664/5
MT4C1664
MT4C1665
1664L
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T4C 1672 64K x 16 DRAM DRAM FAST PAGE MODE, DUAL CAS FEATURES • Industry standard xl6 pinouts, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply • Low power, 3mW standby; 350mW active, typical
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350mW
256-cycle
100ns
400mil)
475mil)
40-Pin
DQ9-DQ16)
MT4C1672
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY C R O M T4C 1668/9 N 64K x 16 DRAM LOW POWER, FAST PAGE MODE FEA TU R ES PIN ASSIGNMENT Top View • Industry standard x l6 pinouts, timing, functions and packages • H igh perform ance, CM O S silicon gate process • Single +5V±10% pow er supply
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MT4C1668/9
200mW
MT4C1668
MT4C1669
125ns
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MT4C1664
Abstract: dram zip DRAM 64k
Text: ADVANCE 6 4 K x 16 DRAM DRAM DRAM FAST PAGE MODE, DUAL CAS FEATURES • Industry standard xl6 pinouts, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply • Low power, 3mW standby; 350mW active, typical
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MT4C1672
350mW
256-cycle
100ns
400mil)
475mil)
MT4C167232
MT4C1672
MT4C1664
dram zip
DRAM 64k
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MT4C1664
Abstract: No abstract text available
Text: M T 4 C 1 664/5 64K X 16 D R A M |V|IC=RO N 6 4 K X 16 D R A M DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • In d u stry standard x l6 pinouts, tim ing, functions and packages • H igh-perform ance, C M O S silicon-gate process • Single +5V±10% p o w er supply
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256-cycle
T4C1664
MT4C1665
40-Pin
MT4C1664
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY |V |IC = R O N MT4C1668/9 LOW POWER, FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard xl6 pinouts, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% pow er supply • Low power, 2mW standby; 200mW active, typical
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MT4C1668/9
200mW
MT4C1668
MT4C1669
40-Pin
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