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    MDM11000T Search Results

    MDM11000T Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MDM11000T-10
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000-T-10
    		Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MDM11000T-12
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000-T-12
    		Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MDM11000T-15
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000-T-15
    		Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MDM11000T-80
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000TI-10
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000TI-12
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000TI-15
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000TI-80
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000TM-10
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000TM-12
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000TM-15
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000TM-80
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000TMB-10
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000TMB-12
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000TMB-15
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF
    MDM11000TMB-80
    		Mosaic Semiconductor 1,048,576 x 1 CMOS High Speed Dynamic RAM Scan PDF

    MDM11000T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DM110

    Contextual Info: MDM11000T/V/G/J-10/12/15 Issue 1.0 July 1989 MDM11000-T/V/G/J 1Mx 1 Monolithic c m o s d r a m ADVANCE PRODUCT INFORMATION 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Pin Definition Package Type: T.'V'.'G'.'J' Row Access Times of 100/120/150 nS High density 300mil DIP Package


    OCR Scan     		MDM11000T/V/G/J-10/12/15 MDM11000-T/V/G/J 300mil MDM11000T MIL-883B 10OOT/V/G/J-10/12/15 DM110 PDF

    Contextual Info: AUe 9* t. 1991 molate 1 M x 1 DRAM MDM11000-80/10/12/15 Issue 3.0 : Junel 991 Semiconductor Inc. r Pin Definitions Package Type: T,V 1,048,576 x 1 CMOS High Speed Dynamic RAM Features WE Row Access Times of 80,100/120/150 ns 5 Volt Supply ±10% 512 Refresh Cycles 8 ms


    OCR Scan     		MDM11000-80/10/12/15 MIL-STD-883C MIL-883 CA92121 PDF

    mcm511000

    Abstract: mcm511000 cmos dynamic ram 511000 MN41C1000SJ-8 MCM511000-85 MCM511000-10 MCM511001 18PIN MBM81C1001A-70L MBM81C1001A-80
    Contextual Info: - 205 IM CMOS x m TRAC £ OC ns) TRCY (ns) -i TCAD (ns) D y n a m i c 7 * RAM (1 0 4 8 5 7 6 x 1 ) V 7' « tt TAH min (ns) TP min (ns) TOY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C (V) 1 8 P I N M « f I DD ! max ; (b A) A I DD STANDBY ( I SB/ I SB2)


    OCR Scan     		18PIN MBM81C1001A-70L MBM81C1001A-80 MBM81C1001A-80L MN41C1000L-8 MN41C1000SJ-10 MN41C1000SJ-8 MN41C1002-10 N41C1002-8 mcm511000 mcm511000 cmos dynamic ram 511000 MCM511000-85 MCM511000-10 MCM511001 PDF

    Contextual Info: 1M x molate 1 DRAM MDM11000-80/10/12/15 Issue 3.1 : October 1991 M osaic S em iconductor Inc. Pin Definitions Package Type: T,V 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Sit WE RAS Row Access Times of 80,100/120/150 ns 5 Voft Supply ± 10% 512 Refresh Cycles 8 ms


    OCR Scan     		MDM11000-80/10/12/15 MIL-STD-883C MIL-883 cA92i PDF

    mcm511000

    Abstract: a 512 j MN41c1000 MN41C1000SJ-8 MCM511000A-10 MCM511000-85 MCM511000-10 MCM511000-12 MB81C1000-10 HCM511000
    Contextual Info: - 2041M CMOS X &KÌ08 m t, ít £ CC A TRAC max ns) TRCY min (ns) TCAD D y n a m i c •7 f- > '/ ft TAH TP (ns) (ns) min (ns) RAM ( 10 4 8 5 7 6 x î ) m ft TWCY rain TDH (ns) (ns) TRWC (ns) V D D or V C C (V) 13 P I N m I DD max (mA) À I DD STANDBY ( I SB/ I SB2)


    OCR Scan     		71-Cyc/ms H5H4C1000P/J/L-15 H5M4C100Ã P/J/L-10 M5M4C1001P/J/L-12 MN41C1000L-8 MN41C1000SJ-10 MN41C1000SJ-8 MN41C1002-10 N41C1002-8 mcm511000 a 512 j MN41c1000 MCM511000A-10 MCM511000-85 MCM511000-10 MCM511000-12 MB81C1000-10 HCM511000 PDF

    Contextual Info: 1 M x 1 DRAM m olaic MDM11000-80/10/12/15 Issue 3.1 : October 1991 Pin Definitions Package Type: T.V 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Row Access Times of 80,100/120/150 ns 5 Volt Supply ± 10% 512 Refresh Cycles 8 ms CAS before RAS Refresh


    OCR Scan     		MDM11000-80/10/12/15 MIL-STD-883C MIL-883 PDF