U/25/20/TN26/15/850/C9920
Abstract: No abstract text available
Text: Absolute PL Quantum Yield Measurement System C9920-02,-02G,-03,-03G Absolute value of the photoluminescence quantum yield can be instantaneously measured for thin films, solutions, and powders. Absolute photo-luminescence quantum yield values as measured instantaneously for thin films, solutions and powders.
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C9920-02
C9920-02,
SSMS0015E11
APR/2011
U/25/20/TN26/15/850/C9920
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U/25/20/TN26/15/850/C9920
Abstract: No abstract text available
Text: Absolute PL Quantum Yield Measurement System C9920-02,-02G,-03,-03G Absolute value of the photoluminescence quantum yield can be instantaneously measured for thin films, solutions, and powders. Absolute photo-luminescence quantum yield values as measured instantaneously for thin films, solutions and powders.
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C9920-02
C9920-02,
B1201
SSMS0015E13
OCT/2014
U/25/20/TN26/15/850/C9920
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Untitled
Abstract: No abstract text available
Text: External Quantum Efficiency Measurement System C9920-12 Luminous efficiency for light emitting devices is measured precisely by utilizing an integrating sphere Light emitting materials are characterized by their fluorescence quantum yield. For light emitting devices like organic and
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C9920-12
C9920-12
SSMS0018E05
JUL/2013
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Untitled
Abstract: No abstract text available
Text: External Quantum Efficiency Measurement System C9920-12 Luminous efficiency for light emitting devices is measured precisely by utilizing an integrating sphere Light emitting materials are characterized by their fluorescence quantum yield. For light emitting devices like organic and inorganic LEDs the
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C9920-12
C9920-12
SE-164
SSMS0018E04
DEC/2008
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votsch vmt
Abstract: DISPERSION shifted FIBER votsch HP8155A HP-3245A HP71400C HP11982A HP3458 HP70950B HP71450
Text: Characterization Report on High Performance 622 Mb Strained Multi Quantum Well (SMQW) 1300 nm Laser Chip Application Note 1146 Introduction As part of Hewlett Packards continuous improvement program, a high performance Strained Multi Quantum Well (SMQW) 1300 nm
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2E23-1
1E10-10
5968-0275E
votsch vmt
DISPERSION shifted FIBER
votsch
HP8155A
HP-3245A
HP71400C
HP11982A
HP3458
HP70950B
HP71450
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LDTC0520
Abstract: WTC3243 PLD10K-CH WLD3343 cables WHY5690 PLD-10 laser diode driver 200 mhz Quantum cascade laser PID1500
Text: Quantum Cascade & Laser Diode Drivers & Temperature Controllers TEMPERATURE CONTROL DUAL LASER DRIVER QCL MODEL NUMBER QCL Series Quantum Cascade Laser Drivers Chassis Mount PLD-CH Series Laser Diode Drivers PLD PCB Series Laser Diode Drivers WLD3343 Series Laser Diode Drivers &
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WLD3343
WLD3393
14-Pin
FL500
FL593
LDTCxx20
WTC3243
WTC3293
WHY5640
LDTC0520
PLD10K-CH
cables
WHY5690
PLD-10
laser diode driver 200 mhz
Quantum cascade laser
PID1500
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zigbee wifi coexistence
Abstract: mobi telecom 802.16e wimax chip 3G HSDPA SoC, Network on Chip, telecom WiMAX wireless technology 430M WiMAX baseband
Text: WiMAX – Promise of Quantum Leap in Broadband Wireless Communications Business Model Considerations George Wu Director of Marketing Technology Solutions and ASSP Fujitsu Microelectronics America, Inc. WCA 2005 – June 29 – July 1, 2005 1 Quantum Leaping to 2010
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29-July
zigbee wifi coexistence
mobi telecom
802.16e wimax chip
3G HSDPA
SoC, Network on Chip, telecom
WiMAX wireless technology
430M
WiMAX baseband
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QL65D5SA
Abstract: 2 Wavelength Laser Diode Photo DIODE (any type) datasheet 650nm "Photo Diode" 650 DIODE 650nm 5mw laser 650NM laser diode 5mw laser diodes for optical source 6 pin laser diode
Text: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D5SA L Signature of Approval Approved by Checked by Issued by Approval by Customer QL65D5SA InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd 2002 ♦ OVERVIEW QL65D5SA is a MOCVD grown 650nm band InGaAlP laser diode with multi-quantum well structure.
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QL65D5SA
QL65D5SA
650nm
650nm
2 Wavelength Laser Diode
Photo DIODE (any type) datasheet
"Photo Diode"
650 DIODE
650nm 5mw laser
650NM laser diode 5mw
laser diodes for optical source
6 pin laser diode
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quantum dot
Abstract: Mechatronics "quantum dots" Hydrogen Peroxide Quantum Effect
Text: EYE 3 March 2007 TOSHIBA SEMICONDUCTOR BULLETIN EYE VOLUME 175 CONTENTS INFORMATION Plugging a Loophole in Security of Quantum Cryptography .2 Development of New Chemical-reuse Environment-conscious
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sxuv20a
Abstract: SXUV100RPD SXUV20BNC AXUV100 sxuv20 SXUV100 SXUV10A solar blind photodiode SXUV20C SXUV300
Text: SXUV Photodiodes Specifications International Radiation Detectors Inc. Delivering Unparalleled Performance Home Photodiode Selection SXUV Specifications 22°C AXUV Series * Standard Products * Operating Principles * Quantum Efficiency Stability * Directly Deposited
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SXUV576
24X24
SXUV300
22X15
SXUV100
PA-100
PA-100V
PA-13
AXUV-100HYB
AXUV-16ELOHYB1
sxuv20a
SXUV100RPD
SXUV20BNC
AXUV100
sxuv20
SXUV100
SXUV10A
solar blind photodiode
SXUV20C
SXUV300
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ot 112
Abstract: 2013A015 photodiode amplifier Photodiode a Silicon Photodiode Solderable Chip
Text: “Improving the Quality of Life through the Power in Light” Planar Silicon Photodiodes …photovoltaic & photoconductive… QUANTUM DEVICES, INC. offers two high quality, state of the art, photodiode constructions: Photovoltaic for PV application and Photoconductive for (PC) applications. Due
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PGAS1S09
Abstract: PGAS1S24 PGAS3S09 PGAU1S12 PGAS1S03 905nm Multi-Quantum Well Strained InGaAs Pulsed laser diode 905nm PGAS1S12 PGAS1S16 PGAS3S06
Text: This series of devices employs elements from 75µm wide single sources to four stacks of 600µm wide elements. Using standard InGaAs quantum wells grown for 905nm, this group of devices effectively replaces conventional double heterostructure GaAsAlGaAs diodes in that wavelength
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905nm,
100KHz
DTS1104
PGAS1S09
PGAS1S24
PGAS3S09
PGAU1S12
PGAS1S03
905nm Multi-Quantum Well Strained InGaAs Pulsed
laser diode 905nm
PGAS1S12
PGAS1S16
PGAS3S06
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Photodiode 2045a001
Abstract: 2045A001 2045A003 2045A002 2045A004 2045A008 2045A009 2045A010 2045A011
Text: “Improving the Quality of Life through the Power in Light” Planar Silicon Photodiodes with Leads …photovoltaic & photoconductive… QUANTUM DEVICES, INC. offers two high quality, state of the art, photodiode constructions: Photovoltaic for PV application and Photoconductive for (PC) applications. Due
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3M-468MP
Abstract: 3M-467MP 3M468 3M-467 3M467 3m467mp 467MP membrane key QPROX QT110
Text: The Q-Files QT60320 Series Panel Design Guidelines Design Guidelines for an Interdigitated Touch Sensor Electrode Panel Quantum Research Group’s QT60320 32 key matrix controller is a departure from our QT110 style devices in that the QT60320 uses a scanned transverse electrode design as
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QT60320
QT110
QT110.
QT60320,
3M-468MP
3M-467MP
3M468
3M-467
3M467
3m467mp
467MP
membrane key
QPROX
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QUANTUM CAPACITIVE
Abstract: Quantum Effect Devices GVT7164T18 MCM69T618 R5000 RM5200 RM5271 RM7000 qed rm5200 mips r5000
Text: External Cache for the RM5271 Application Note Introduction Quantum Effect Devices, Inc. QED was founded in 1991 to design and develop MIPS RISC microprocessors to MIPS Technologies, Inc. (MTI) specifications. MTI sub-licensed those designs to MIPS licensees. In 1996 QED obtained a license
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RM5271
64-bit
RM5270,
RM5271,
RM7000.
R5000,
RM5271
RM5271-AN1161010002
QUANTUM CAPACITIVE
Quantum Effect Devices
GVT7164T18
MCM69T618
R5000
RM5200
RM7000
qed rm5200
mips r5000
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2 Wavelength Laser Diode
Abstract: QL65D5SA 650 DIODE 650-nm Laser Diode 10 pin Roithner-Laser QL65D5S
Text: QL65D5SA InGaAlP Laser Diode 2002 ♦ OVERVIEW QL65D5SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Pointer and Bar Code Reader.
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QL65D5SA
QL65D5SA
2 Wavelength Laser Diode
650 DIODE
650-nm
Laser Diode 10 pin
Roithner-Laser
QL65D5S
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DFB-1310-C5-2-A-xx-x-x
Abstract: 1350nm BF transistor series datasheet
Text: DFB-1310-C5-2-A-xx-x-x Description The DFB-1310-C5-2-A-xx-x-x series of Multi-Quantum Well MQW Distributed Feedback (DFB) lasers have been designed specifically analog applications, especially CATV return-path. The devices feature high output power, wide
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DFB-1310-C5-2-A-xx-x-x
DFB-1310-C5-2-A-xx-x-x
1270-1350nm,
1350nm
BF transistor series datasheet
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QL63D5SA
Abstract: No abstract text available
Text: QL63D5SA InGaAlP Laser Diode 2002 ♦ OVERVIEW QL63D5SA is a MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Optical Leveler and Modules.
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QL63D5SA
QL63D5SA
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Untitled
Abstract: No abstract text available
Text: Large Area InGaAs Avalanche Photodiodes for 1550 nm eye-safe laser range finding applications Overview The C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide large quantum efficiency. Q.E. , high responsivity and low noise in the
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C30645
C30662
cus49)
0411-803P
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Germanium Power Devices
Abstract: germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power GAV100 GAV30 Germanium
Text: GPD GAV30 GAV40 GAV100 Ge Avalanche Photodiodes OTDR Infrared Sensing Telecommunications Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV40 GAV100 GAV30 GAV40 GAV100 Quantum Efficiency peak 72 (80)
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GAV30
GAV40
GAV100
GAV30
GAV100
MIL-I-45208.
Germanium Power Devices
germanium power devices corporation
Germanium Power Diodes
Photodiodes Germanium PIN
Germanium power
Germanium
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY MICRON I QUANTUM DEVICES, INC. FLASH MEMORY MT28F400B1 VET, MT28F800B1 VET, MT28F002B1 VET, MT28F004B1 VET, MT28F008B1 VET Low Voltage, Extended Temperature FEATURES • Extended temperature range operation:
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MT28F400B1
MT28F800B1
MT28F002B1
MT28F004B1
MT28F008B1
16KB/4K-word
128KB/64K-word
120ns
100ns
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Untitled
Abstract: No abstract text available
Text: quantum electronics r — ;- -B o x 3 »1262- B ra m 'e y i pSc k a r S \ 2018 \ i APPLICATION NOTE 1018 Designing with the HCPL-4100 and
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HCPL-4100
HiCPL-4200
IECI-24,
3266A
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Germanium Power Diodes
Abstract: BD3 tunnel diode Germanium Power Devices
Text: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage
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350mv)
Germanium Power Diodes
BD3 tunnel diode
Germanium Power Devices
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1N3716
Abstract: diode germanium tu 38 f 1N3717 1N3714 1N3712 IN3712 diode germanium tu 38 e 1n3719 1N3715 1N3713
Text: Germanium Power Devices Corp. 1N3712-20 1H3713-21 4 Tunnel Diodes Specifications IN3712 through 1N3720 and 1N3713 through 1N3721 are Germanium Tunnel Diodes offering peak currents of 1.0, 2.2, 4.7,10, and 22 ma. These devices, which make use of the quantum mechanical tunneling phenom
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1N3712-20
1H3713-21
IN3712
1N3720
1N3713
1N3721
1N37131N3721
1N3721
3S47375
000073S
1N3716
diode germanium tu 38 f
1N3717
1N3714
1N3712
diode germanium tu 38 e
1n3719
1N3715
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