PGAU1S12 Search Results

PGAS1S09

Abstract: PGAS1S24 PGAS3S09 PGAU1S12 PGAS1S03 905nm Multi-Quantum Well Strained InGaAs Pulsed laser diode 905nm PGAS1S12 PGAS1S16 PGAS3S06
Contextual Info: This series of devices employs elements from 75µm wide single sources to four stacks of 600µm wide elements. Using standard InGaAs quantum wells grown for 905nm, this group of devices effectively replaces conventional double heterostructure GaAsAlGaAs diodes in that wavelength

Contextual Info: w w w . o p t o e l e c t r o n i c s . p e r k i n e l m e r. c o m Peak power to 112 Watts at 150 ns pulse width Range of single element and stacked devices Up to 400% overdrive capability 25˚ beam divergence for single elements 83% power retention at 85˚C