e78996 india
Abstract: IRFK4H250 DIODE 3L2 E78996 rectifier module LS-108 hex-pak IRFK4J250 E271
Text: Bulletin E27105 International ^ R e c tifie r IRFK4H250,IRFK4J250 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • ■ • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
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E27105
IRFK4H250
IRFK4J250
E78996.
T0-240
f5/336
S-162
CH-8032ZURICH,
IL60067.
NJ07650.
e78996 india
DIODE 3L2
E78996 rectifier module
LS-108
hex-pak
IRFK4J250
E271
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T0254AA
Abstract: No abstract text available
Text: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low
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T0254AA
SM2F151*
SM2F351*
SM2F251*
SM2F451*
T0254AA
T0258AA
FT0258AA
HDS100
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e78996 india
Abstract: LD41A 8700-35 E78996 rectifier module IRFK3D250 IRFK3F250 hex-pak e78996 dk2880
Text: Bulletin E2798 International jag Rectifier IRFK3D250,IRFK3F250 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • H igh C u rre n t C apa bility. U L re cognise d E 78996. E lectrically Isolated B ase Plate. E asy A s s e m b ly into E quipm ent.
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E2798
IRFK3D250
IRFK3F250
E78996.
T0-240
S-162
CH-6032
IL60067.
NJ07650.
FL32743.
e78996 india
LD41A
8700-35
E78996 rectifier module
IRFK3F250
hex-pak
e78996
dk2880
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e78996 india
Abstract: E78996 rectifier module IRFK3DC50 IRFK3FC50
Text: Bulletin E27101 International ficÊlRertifeT IRFK3DC50,IRFK3FC50 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
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E27101
IRFK3PC50
IRFK3FC50
E78996.
T0-240
se2/337
S-162
CH-6032
IL60067.
NJ07650.
e78996 india
E78996 rectifier module
IRFK3DC50
IRFK3FC50
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74FCT841B
Abstract: No abstract text available
Text: ggTN dt) HIGH-PERFORMANCE CMOS BUS INTERFACE LATCHES IDT54/74FCT841A/B/C Integrated Dev ice Technology, Inc. FEATURES: DESCRIPTION: • The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology. The IDT54/74FCT840 series bus interface latches are
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IDT54/74FCT841A/B/C
IDT54/74FCT841A
IDT54/74FCT841B
IDT54/74FCT841C
IDT54/74FCT800
74FCT841B
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KFX2703T
Abstract: No abstract text available
Text: SAW FILTER KFX2703T TECH NICAL D A T A s p e c ific a tio n s f o r s a w d u p le x e r RF Duplexer for Cordless phone ISM • High stability and reliability with good performance and no adjustment. • Wide and sharp pass band characteristics. • Low insertion loss and deep stop band attenuation
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KFX2703T
KFX2703T
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BPL TV circuit for vertical ic
Abstract: 74HC393 equivalent KL3N
Text: / jm T L * rn J i n C A LTC1292/LTC1297 B TECHNOLOGY Single Chip 12-Bit Data Acquisition Systems KOTUR6S D€SCRIPTIOn • Built-In Sample-and-Hold The LTC1292/LTC1297 are data acquisition systems that contain a 12-bit, switched-capacitor successive approxi
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12-Bit
LTC1292/LTC1297
12-bit,
LTC1297
LTC1292
60kHz
LTC1292.
IN4148
500SC
BPL TV circuit for vertical ic
74HC393 equivalent
KL3N
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e78996 india
Abstract: IR E78996 IR E78996 105 e271 e2711 E78996 rectifier module hex-pak IRFK6H150 IRFK6J150
Text: B u lle tin E 2 7 1 1 0 International ^ R e c tifie r IRFK6H150JRFK6J150 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High C urrent C apability. UL recognise d E 78996. E lectrically Isolated Base Plate. E asy A ssem b ly into E quipm ent.
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E27110
IRFK6H150
IRFK6J150
E78996.
T0-240
CH-8032ZURICH,
IL60067.
NJ07650.
FL32743.
CA90245.
e78996 india
IR E78996
IR E78996 105
e271
e2711
E78996 rectifier module
hex-pak
IRFK6J150
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Untitled
Abstract: No abstract text available
Text: KFX0327T SAW FILTER TECH NICAL D A T A SPECIFICATIONS FOR SAW DUPLEXER RF Duplexer for Cordless phone ISM • High stability and reliability with good performance and no adjustment. • Wide and sharp pass band characteristics. • Low insertion loss and deep stop band attenuation
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KFX0327T
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Untitled
Abstract: No abstract text available
Text: 'SC INTEGRATED CIRCUIT T O S H IB A T O S H IB A M O S D IGITAL IN T E G R A T E D CIRCUIT TC 551664J - 15, TC551664J - 20. T C 5 5 1 6 6 4 J - 2 5 TECHNICAL D A T A SILICON G A T E C M O S PRELIM INARY 65,536 W O R D x 16 BIT C M O S STATIC RAM DESCRIPTION
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551664J
TC551664J
TC55166AJ
SOJ44â
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Untitled
Abstract: No abstract text available
Text: IDT74FCT3932 3.3V LOW SKEW PLL-BASED ADVANCE INFORMATION CMOS CLOCK DRIVER Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • 0.5 MICRON CMOS Technology Guaranteed low skew 16 programm able frequency configurations 17 3-state outputs
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IDT74FCT3932
100MHz
FCT3932
IDT54/74FCT3932
S048-1)
S048-2)
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KM23C32000
Abstract: 123Q4
Text: KM23C32000 CMOS MASK ROM 32M-Bit 2 M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 is a fully static m ask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using s ilic o n gate CMOS process tech nolgy. •
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KM23C32000
32M-Bit
150ns
42-pin,
KM23C32000
KM23C92000
KM23C32000)
123Q4
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Untitled
Abstract: No abstract text available
Text: PD - 9.1239D International i R Rectifier IRF7303 HEXFET Power MOSFET • • • • • • • G eneration V Technology Ultra Low O n-Resistance Dual N-Channel M osfet S urface M ount A vailable in Tape & Reel Dynam ic dv/dt Rating Fast Switching V dss = 3 0 V
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1239D
IRF7303
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. FAST CMOS OCTAL TRANSPARENT LATCHES IDT54/74FCT373/2373T/AT/CT/DT IDT54/74FCT533/2533T/AT/CT IDT54/74FCT573/2573T/AT/CT/DT FEATURES: DESCRIPTION: • Common features: The IDT54/74FCT373/2373T/AT/CT/DT, IDT54/74FCT533/ 2533T/AT/CT and IDT54/74FCT573/2573T/AT/CT/DT are oc
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IDT54/74FCT373/2373T/AT/CT/DT
IDT54/74FCT533/2533T/AT/CT
IDT54/74FCT573/2573T/AT/CT/DT
IDT54/74FCT373/2373T/AT/CT/DT,
IDT54/74FCT533/
2533T/AT/CT
IDT54/74FCT573/2573T/AT/CT/DT
573/2S73T/AT/CT/DT
4A2S771
373AT
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Untitled
Abstract: No abstract text available
Text: KM23C4100H CMOS MASK ROM 4M-Bit 512Kx 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,286 x 8 Word Mode: 26 2,1 4 4 x 1 6 • Fast access time: 100ns (max.) • Supply voltage: single + 5V • Current consumption
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KM23C4100H
512Kx
8/256K
100ns
40-pin
44-pin
23C4100H)
KM23C4100HFP1)
KM23C4100HFP2)
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U275
Abstract: No abstract text available
Text: KM23C2001A G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2001A is a fu lly s ta tic m ask program m able ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silico n -g a te CMOS process tech nolog y.
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KM23C2001A
144x8
100ns
32-pin,
525mil,
KM23C
U275
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Untitled
Abstract: No abstract text available
Text: KM23C32005G CMOS MASK ROM 32M-Bit 4M x 8 /2 M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) The KM23C32005G is a fu lly s ta tic m ask program mable ROM fabricated using s ilicon gate CMOS process
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KM23C32005G
32M-Bit
KM23C32005G
A3-A20
KM23C32005G)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23C32000G CMOS MASK ROM 32M-Bit 4M x8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption
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KM23C32000G
32M-Bit
150ns
100fiA
44-pin,
KM23C32000G
KM23C32000G)
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K13S
Abstract: SS100 IR SS100 Sertech Labs
Text: M M m m C hatsw orth, CA ic ro s m e m i P ro g ress P o w e re d b y Tech n o lo g y 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Featnies • • • • • • 1 Amp Schottky Rectifier 2 0 - 100 Volts Schottky Barrier Rectifier
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DO-214AC
SS100
Volt53)
SS100
K13S
IR SS100
Sertech Labs
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la7200
Abstract: 7201SA IDT7201SA
Text: In te g r a te d D e v ic e T e c h n o lo g y , I n c C M O S PARALLEL FIR ST-IN/FIRST-O UT FIFO 256 X 9-BIT & 512 X 9-BIT IDT 7200S/L IDT 7201SA/LA FEATURES: DESCRIPTION: • First-In/First-Out dual-port memory The IDT7200/7201A are dual-port memories that utilize a spe
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7200S/L
7201SA/LA
IDT7200)
IDT7201A)
IDT7200
IDT7201A
MK4501,
125eC)
la7200
7201SA
IDT7201SA
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Untitled
Abstract: No abstract text available
Text: KM23C4100H CMOS MASK ROM 4M-Bit 512K.X 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (m ax.) • Supply voltage: single + 5V • Current consumption
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KM23C4100H
8/256K
100ns
40-pin
44-pin
KM23C41OOH
23C4100H)
KM23C4100HFP1)
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m23c3
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E 3 • DD171S1 T3Ô ■ S H 6 K 7^4142 KM23C32005G CMOS MASK ROM 32M-BH 4M x8!2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time
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DD171S1
KM23C32005G
32M-BH
150ns
100mA
KM23C32005G
7Tbm45
DG1712S
KM23C32005G)
m23c3
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KM23C512
Abstract: No abstract text available
Text: KM23C512 CMOS MASK ROM 512K-BH 64K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C512: 28-pin DIP (Polarity programmable chip enable pin and output enable pin) • KM23C512G: 32-pin SOP (Polarity programmable chip enable pin and output enable pin)
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KM23C512
512K-BH
KM23C512:
28-pin
KM23C512G:
32-pin
120ns
100/iA
KM23C512
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25N03
Abstract: TSM25N03 ve45 T0-252
Text: s TAIWAN SEMICONDUCTOR TSM25N03 25V N-Channel MOSFET pb RoHS C O M PLIA N C E TO-252 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain Vos (V) 3. Source 25 T T iT Features • • R D S (o n )(m Q ) Id (A) 14 @ Vos = 10V 25 19 @ V«»=4.5V 25 Block Diagram
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TSM25N03
TSM25NÃ
O-252
25N03
TSM25N03
ve45
T0-252
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