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Samsung Electro-Mechanics CL03A104KL3NNNC CAP CER 0.1UF 35V X5R 0201
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CL03A104KL3NNNC	Reel			50,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	CL03A104KL3NNNC	Reel		20 Weeks	100,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	CL03A104KL3NNNC		9,420			1 $0.16 10 $0.107 100 $0.05 1000 $0.031 10000 $0.022	Buy Now
Shindengen Electronic Manufacturing Co Ltd KL3N14-5103 Sidacs VDRM=120 ITSM=30
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Mouser Electronics	KL3N14-5103					1 $1.49 10 $1.24 100 $0.984 1000 $0.706 10000 $0.631	Get Quote
Shindengen Electronic Manufacturing Co Ltd KL3N14-5073 Sidacs Thyristor Surge Suppressor KL series
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Mouser Electronics	KL3N14-5073					1 - 10 - 100 - 1000 - 10000 $0.631	Get Quote
Samsung Semiconductor CL03A104KL3NNNC
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Bristol Electronics	CL03A104KL3NNNC		1,020,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Electronics Co. Ltd CL03A104KL3NNNC Multilayer Ceramic Capacitor, 0.1 uF, 35 V, ï¿½ 10%, X5R, 0201 [0603 Metric] (Alt: CL03A104KL3NNNC)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Abacus	CL03A104KL3NNNC			21 Weeks	20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

KL3N Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KL3N14		Shindengen Electric	Surge Protectors - Thyristor Surge Suppressors (Surface Mount)		Original	PDF
KL3N14		Shindengen Electric	TSS KL Series		Original	PDF

KL3N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: KL SMD TSS KL SERIES OUTLINE DIMENSIONS KL3N14 2.0 2.5 ±0.3 1.5 ±0.2 14 140V30A 64 Package : 1F ロット記号（例）品名クラス（略号） 2.0 4.2 ソルダリングパッドの参考パターン 1.2 ±0.3 1.2 ±0.3 0.1±0.1 2.0 ±0.3 0.2 0.9	Original	PDF	KL3N14 140V30A 20mVrms
KL3N14 Abstract: No abstract text available Text: SHINDENGEN TSS KL Series SMT OUTLINE DIMENSIONS KL3N14 Case : 1F Unit : mm RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM I TSM 10/1000Ês, Non-repetitive	Original	PDF	KL3N14 KL3N14
Untitled Abstract: No abstract text available Text: 電流制御型 KL シリーズ面実装品（SMD） TSS KL SERIES •外形寸法図 OUTLINE DIMENSIONS KL3N14 2.0 2.5 ±0.3 64 14 140V30A 1.5 ±0.2 Package : 1F ロット記号（例）品名クラス（略号） 2.0 4.2 ソルダリングパッドの参考パターン	Original	PDF	KL3N14 140V30A T125unless
KL3N14 Abstract: U181 MARKING KL Text: 電流制御型 KL シリーズ面実装品（SMD） TSS KL SERIES •外形寸法図 OUTLINE DIMENSIONS KL3N14 2.0 2.5 ±0.3 64 14 140V30A 1.5 ±0.2 Package : 1F ロット記号（例）品名クラス（略号） 2.0 4.2 ソルダリングパッドの参考パターン	Original	PDF	KL3N14 140V30A T125unless 20mVrmsVD KL3N14 U181 MARKING KL
KL3N14 Abstract: SMD Transistor 1f Text: SHINDENGEN TSS KL Series KL3N14 SMD OUTLINE DIMENSIONS Case : 1F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM ITSM 10/1000 s, Non-repetitive	Original	PDF	KL3N14 10/1000s, 8/20s, 00V/s KL3N14 SMD Transistor 1f
7555-T Abstract: M1FM3 Text: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct	Original	PDF
D1FS4N Abstract: G1VL8 KP4F12 D3FJ10 KL3Z18 K1VP24 1000cy DL04-18F1 KU4F8 smd 1f Text: Ref. No. 84-119e November 13, 2006 Messrs. Request for Acceleration of Switching the Plating Type for Two-Terminal SMD Diodes Dear Valued Customer, We asked our customers the switching to Sn plating in our letter dated July 7, 2005 Ref. No. 83-033 and, thanks to your cooperation, the progress of the transition is much faster than expected.	Original	PDF	84-119e yetking125, 24h85, 30minRT 30min 100cycles 1000h D1FS4N G1VL8 KP4F12 D3FJ10 KL3Z18 K1VP24 1000cy DL04-18F1 KU4F8 smd 1f
1.5KE400P Abstract: 3A143 P6KE400P SMA4T39 P6KE39CP P6KE200A equivalent tvs505 equivalent TTS144 P6KE27P P6KE12CP Text: CROSS REFERENCE PROTECTION DEVICES INDUSTRY STANDARD 1SMA5.0AT3 ↓ 1SMA78AT3 1SMB5.0AT3 ↓ 1SMB170AT3 1SMB5.0CAT3 ↓ 1SMB78CAT3 1SMC5.0AT3 ↓ 1SMC78AT3 1.0KE5.0,A ↓ 1.0KE170P,A 1.0KE5.0C,CA ↓ 1.0KE170C,CA 1.2KE5.0,A ↓ 1.2KE170,A 1.2KE5.0C,CA ↓	Original	PDF	1SMA78AT3 1SMB170AT3 1SMB78CAT3 1SMC78AT3 0KE170P 0KE170C 2KE170 2KE170C 4KESD160 4KESD160C 1.5KE400P 3A143 P6KE400P SMA4T39 P6KE39CP P6KE200A equivalent tvs505 equivalent TTS144 P6KE27P P6KE12CP
16-SQP Abstract: kl3r20 Transient Surge Suppressors Text: TRANSIENT SURGE THYRISTORS FEATURES • SURGE PROTECTION DIODE INCLUDES FOLDBACK TECHNOLOGY • FOR DIGITAL PHONES & PBX COMMS, MODEMS & FAX MACHINES • QUICK RESPONSE TIME & HOLDING CURRENT OFFERS LIGHTNING STRIKE PROTECTION • IDEAL FOR WIDE THERMAL EXCURSIONS	Original	PDF	KL3Z07 KL3Z18 KL3L07 KL3N14 KL3R20 KL3R25 KP4L07 KP4L08 KP4N12 KP4N14 16-SQP Transient Surge Suppressors
600w class d circuit diagram schematics Abstract: TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3 Text: ASD and Discrete Products PROTECTION Devices and IPADs™ Improving the Immunity of your System Designer’s Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL	Original	PDF	SGPROTECT/1001 600w class d circuit diagram schematics TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3
LT GBL406 Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100 Text: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA	Original	PDF	5CE10 5CE100 5CE100A 5CE100C 5CE100CA 5CE10A 5CE10C 5CE10CA 5CE11 5CE110 LT GBL406 SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
P6KE200A equivalent Abstract: SICTE5 3A143 MR2835S equivalent ZP1400 P1.5KE440 ZZY-62 P6KE62CA BZW06-5V8 equivalent BR220-140 SICTE-8 Text: CROSS REFERENCE PROTECTION INDUSTRY STANDARD 1SMA59 1SMB5.0AT3 SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SM2Zxxx SM6T6V8A or SMBJ5.0A-TR ↓ 1SMB170AT3 ↓ SM6T200A or SMBJ170A-TR SM6T6V8CA or SMBJ5.0CA-TR 1SMB5.0CAT3 ↓ 1SMB78CAT3 ↓ SM6T200CA or SMBJ170CA	Original	PDF	1SMA59 1SMB170AT3 SM6T200A SMBJ170A-TR 1SMB78CAT3 SM15T6V8A 1SMC78AT3 SM15T100A SMCJ78A-TR 0KE170A P6KE200A equivalent SICTE5 3A143 MR2835S equivalent ZP1400 P1.5KE440 ZZY-62 P6KE62CA BZW06-5V8 equivalent BR220-140 SICTE-8
P1.5KE SMCJ Abstract: transistor 603 11f smd DALC P1,5KE TIP290 m 9583 transistor axial diode 1.5Se 24 5KE56CA TISPA79R241 3A143 Text: Protection devices Selection guide April 2006 www.st.com 2 Contents Introduction 4 Product references 5 ESD production Standards and technical recommendations EOS and ESD transient voltage suppressor: Transil 6 6 8 Data protection against ESD 13 Telecom protection	Original	PDF	categori7/637 SGPROTE0406 P1.5KE SMCJ transistor 603 11f smd DALC P1,5KE TIP290 m 9583 transistor axial diode 1.5Se 24 5KE56CA TISPA79R241 3A143
Untitled Abstract: No abstract text available Text: Surge Absorbers Transient Surge Suppressors [F eatures] 1. Bidirectional or uni-directional characteristics ' ^ switchboards 3. Large surge current capacity 4. Repeated use against surges is possible. KA3Z07 18 KA10R25 KL3Z07 18 ☆KL3L07 KL3N14 KL3R20 KP4L07	OCR Scan	PDF	O-221 KA3Z07 KA10R25 KL3Z07 KL3L07 KL3N14 KL3R20 KP4L07 KP4N12 KP10L06

4N12 Abstract: No abstract text available Text: Su rface-M o un t Devices V a r is t o r s 1F Absolute Maximum Ratings Electrical C haracteristics Ta = 25X5 Outline If Ifsm Tstg T¡ Vf i If i VPS If 2 VPS IFS [m A ] [A ] [•c] [•c] [V ] [m A ] [V ] [m A ] [V ] [m A ] Package Fig. 370 7 .5 150 2 .3 + 0 .25	OCR Scan	PDF	CharacteriL3Z07 KL3LU06 KL3L07 KL3LU07 KL3N14 KL3R20 KP4L07 KP4N12 KP4R25 KP8LU07 4N12
40125 Abstract: UL497B KL3L07 KL3LU08 KL3N14 KL3R20 KL3Z07 KP10L06 KP10LU07 KP10N14 Text: 1F • Absolute Maximum Ratings 1Y Electrical Characteristics Ta=25°C Outline If Type No. . ÍFSM Tj Vfi If i V f? lF2 V f3 lF3 [V ] [m A ] [V ] [m A ] [V ] [m A ] 2 .3 + 0.25 I 2.75 ± 0 .2 5 I0 3 . 1+ 0 .2 5 [A ] [C ] [• c ] ☆ V R 6 1 F 1 ' 370	OCR Scan	PDF	irVR61F1 KP10N14 KP10R25 AKP15L08 KP15N14 KP15R25 AKU5N12 KU10LU07 KU10L08 -KU10R29N 40125 UL497B KL3L07 KL3LU08 KL3N14 KL3R20 KL3Z07 KP10L06 KP10LU07
shindengen m Abstract: Thyristor diodes Text: Shindengen’s Silicon Surge Protective Devices SSPD r KU, KL seriesj are a new generation of solid state arrester in response to the needs of sophisticated telecommunications society. With a PNPN structure, the r KU, KL seriesj perform a characteristics like bidirectional thyristor diodes for use	OCR Scan	PDF	tra80 D0-214AA shindengen m Thyristor diodes
10L08 Abstract: KT15R Text: Surge Absorbers Thyristor Surge Suppressors [F e a tu re s ] 1. Bidirectional or uni-directional characteristics 2. High speed response 3. Large surge current capacity 4. R epeated use a gainst surges is possible. [A p p lica tio n s] 1. Lightning surge adsorption fo r com m unications circuits	OCR Scan	PDF	O-221 L497B E183905 10L08 KT15R
ST03D200 Abstract: ST03D 55 ST02D-200 KU5R29N ST03D170 M67145 ST03D 65 st02d200 Text: Surge Absorbers AX06 Absolute Maximum Ratings Type No. P r*w . . \|W\| Tstg . ! ‘ :l Tj . AX 078 Electrical Characteristics V rm V br max (std) Ir (max) Conditions Ir I VI. .I VI . r q . ST02D-B2 m •!'.A ! AX 078 Silver 5-2 AX078	OCR Scan	PDF	AX078 ST02D-B2 ST02D-170 ST02D-200 ST03D-82 ST03D-170 ST03D-200 ST04-16 ST04-27 ST03D200 ST03D 55 KU5R29N ST03D170 M67145 ST03D 65 st02d200
T40N14 Abstract: KT40R KA3Z07 KT15R Text: T ra n sie n t Surge S uppressors ¿Features] Applications^ 1. Bidirectional characteristics 1. Lightning surge adsorption for communications circuits 2. High speed response 2. Lightning surge adsorption for transmitters and switchboards 3. Large surge current capacity	OCR Scan	PDF	KT10N12 KT10R25 KT15N12 KT15R KT40R O-221 T40N14 KA3Z07
BPL TV circuit for vertical ic Abstract: 74HC393 equivalent KL3N Text: / jm T L * rn J i n C A LTC1292/LTC1297 B TECHNOLOGY Single Chip 12-Bit Data Acquisition Systems KOTUR6S D€SCRIPTIOn • Built-In Sample-and-Hold The LTC1292/LTC1297 are data acquisition systems that contain a 12-bit, switched-capacitor successive approxi	OCR Scan	PDF	12-Bit LTC1292/LTC1297 12-bit, LTC1297 LTC1292 60kHz LTC1292. IN4148 500SC BPL TV circuit for vertical ic 74HC393 equivalent KL3N
10L06 Abstract: P10R25 KL3N Text: T ra n sie n t S urge S u p p re sso rs [F e a tu re s] 1. Bidirectional characteristics [A pplications] 1. Lightning surge adsorption for communications circuits 2. High speed response 2. Lightning surge adsorption for transmitters and switchboards 3. Large surge current capacity	OCR Scan	PDF	KA10N KA10R KL3L07 KP4N12 KP10N P10R25 KP1SL07 KP15N P10LU 10L06 KL3N
KA3Z07 Abstract: No abstract text available Text: Surge Absorbers ¡¡£1 Applications [Features] 1. Bidirectional or uni-directional characteristics 1. Lightning surge adsorption tor communications circuits 2. High speed response 2. Lightning surge adsorption for transmitters and switchboards 3. Large surge current capacity	OCR Scan	PDF	O-221 UL497B E183905 KA3Z07

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KL3N Search Results

KL3N Price and Stock

Samsung Electro-Mechanics CL03A104KL3NNNC

Shindengen Electronic Manufacturing Co Ltd KL3N14-5103

Shindengen Electronic Manufacturing Co Ltd KL3N14-5073

Samsung Semiconductor CL03A104KL3NNNC

Samsung Electronics Co. Ltd CL03A104KL3NNNC

KL3N Datasheets (2)

KL3N Datasheets Context Search

Untitled

KL3N14

Untitled

KL3N14

KL3N14

7555-T

D1FS4N

1.5KE400P

16-SQP

600w class d circuit diagram schematics

LT GBL406

P6KE200A equivalent

P1.5KE SMCJ

Untitled

4N12

40125

shindengen m

10L08

ST03D200

T40N14

BPL TV circuit for vertical ic

10L06

KA3Z07