Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23C32000G CMOS MASK ROM 32M-Bit 4M x8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption
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KM23C32000G
32M-Bit
150ns
100fiA
44-pin,
KM23C32000G
KM23C32000G)
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Untitled
Abstract: No abstract text available
Text: KM23C32000G CMOS MASK ROM 32M-BH 4M x 8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5 V • Current consumption
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KM23C32000G
32M-BH
150ns
KM23C32000G
152x16
easy150
KM23C32000G)
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7Rb4142 0017112 THS KM23C32000G CMOS MASK ROM 32M-BH 4M x8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.)
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7Rb4142
KM23C32000G
32M-BH
150ns
44-pin,
KM23C32000G
7Tb4142
DD1711S
KM23C32000G)
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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416C256
14800A
14900A
514170B
514280B
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
HN624017FB
K93C46
93cs46n
MB832001
hn62308
41C1000
93C46LN
41464
hn623257
HM63832
DT71256
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23c3200
Abstract: No abstract text available
Text: PRELIMINARY KM 23C3200C^^ CMOS MASK ROM 32M-Bit 4M x 8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 X 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V
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23C3200C^
32M-Bit
150ns
100/iA
44-pin,
KM23C32000G
KM23C32000G)
23c3200
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44SOP
Abstract: 2MX16 1MX16
Text: M E M O R Y IC s FUNCTION G UIDE 2.6 MASK ROM Continued Capacity Part Number Orgnization Speedfns) Tech. 2MX 8/ 150/200/250 CMOS 2Mx8/ 1M X 16 120/150/200 CMOS * KM23C16005A(G) 2Mx8/ 120/150/200 CMOS (tltt?50) t KM23V16000A(G) 1Mx16 2Mx8/ 1Mx16 KM23C16000(G)
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KM23C16000
KM23C16000A
KM23C16005A
KM23V16000A
1Mx16
2Mx16
2Mx16
44SOP
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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