KM23C Search Results

U 324 SAMSUNG

Abstract: KM23C8100BG 524288X16
Contextual Info: SA MS UN G E L E C T R O N I C S INC b?E D • 7=11,4142 0G17DL.0 ÔT7 SM6K CMOS MASK ROM KM23C81 OOB G 8 M-BH ( 1M X 8 / 5 1 2 K X 16) C M O S M A S K R O M FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode)

Contextual Info: KM23C16005D G CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access

Contextual Info: KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption

Contextual Info: KM23C16205DSG CMOS MASK ROM 16M-Bit 1Mx16 /512Kx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 4 double Words / 8 Words page access

Contextual Info: KM23C32205BSG CMOS MASK ROM 32M-Bit 2Mx16 /1Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 16(word mode) 1,048,576 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 double words/ 8 words page access

Contextual Info: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)

Contextual Info: KM23C32005BT CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 8 words/ 16 bytes page access

Contextual Info: PRELIMINARY KM23C32000G CMOS MASK ROM 32M-Bit 4M x8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption

Contextual Info: KM23C8000B G ELECTRONICS CMOS Mask ROM 8M-Bit (1M X8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576x 8 bit organization • Fast access time :100ns(max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.) Standby : 50 fiA (max.)

Contextual Info: SA MS UNG E L E C T R O N I C S INC 42E D Bi 0011103 1 BSflGK PRELIMINARY KM23C16000FP CMOS MASK ROM 16M-Bit 2M X8/1M X16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.)

Contextual Info: KM23C32000A CMOS Ma sk ROM ELECTRONICS 32M-Bit 2M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000A is a fully static mask programmable ROM organized 2,097,152x16bit.lt is fabricated using silicon-gate CMOS process technology.

23C32000

Contextual Info: KM23C32000AG C MOS M a s k R OM ELECTRONICS 32M-BH 4M X 8/2M X 16 CMOS MASK ROM • Switchable organization 4,194,304 x8(byte mode) 2,097,152 x16(word mode) • Fast access time : 120ns (Max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.)

Contextual Info: KM23C16000FP CMOS MASK ROM 16M-Bit 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.) • Supply Vbltage: single + 5V • Current consumption

Contextual Info: CMOS MASK ROM KM23C8000D G 8M-Bit (1 Mx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES 1,0 48,576 x 8 bit org an izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply vo lta g e : sin gle +5V C u rrent con sum p tion O perating : 50m A (m ax.) S ta n d b y

Contextual Info: PRELIMINARY KM23C8001H CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001H is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology.

Contextual Info: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • • • • • • • • 524,288x8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V Current consumption Operating : 50m A(M ax.) Standby : 50|iA(M ax.)

KM23C4001

Contextual Info: SAM SUN G E L E C T R O N I C S INC 42E El 7 clb m M B oonm o 5 QSNGK KM23C4001 CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM V ‘ ! ' 1 3 - 1 3 - / 5 FEATURES GENERAL DESCRIPTION • • • • The KM23C4001 is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using

Contextual Info: SAMSUNG ELECTRONICS INC b?E » • 7c b m 4 2 GG17034 70S « S N 6 K KM23C8005B G) CMOS MASK ROM 8M-Bit (1M x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time Random access: 100ns (max.) Page access: 50ns (max.)

Contextual Info: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES The KM 23C4200D is a fully static m ask program m able ROM >262,144 x 16 bit organization > Fast access tim e : 80ns(M ax.) >Supply voltage : single +5V > Current consumption

Contextual Info: SAMSUNG ELECTRONICS INC 42E ]> n 7^4142 KM23C2100 0011124 ? ESSM6K CMOS MASK ROM 2M-BH 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itch ab le organization Byte M ode: 262,144 x 8 ROM T h e K M 23C 2100 is a fully s tatic m as k program m able

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D • 7^4142 KM23C4200B J D017G22 J13 CMOS MASK ROM 4M-Bit (512K X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.)

Contextual Info: KM23C4000B CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES • • • • • • • • • GENERAL DESCRIPTION 524,288 x 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption Operating: 50mA (max.) Standby: 50ftA (max.)

23C32000

Abstract: 23C32000CT 23c3200
Contextual Info: KM23C32000C E T_ CMOS MASK ROM 32M-Bit (4Mx8 2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V

Contextual Info: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000D(E)TY is a fully static mask programmable ROM organized 524,288 x 8bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all