KM23C4 Search Results

Contextual Info: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)

Contextual Info: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • • • • • • • • 524,288x8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V Current consumption Operating : 50m A(M ax.) Standby : 50|iA(M ax.)

KM23C4001

Contextual Info: SAM SUN G E L E C T R O N I C S INC 42E El 7 clb m M B oonm o 5 QSNGK KM23C4001 CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM V ‘ ! ' 1 3 - 1 3 - / 5 FEATURES GENERAL DESCRIPTION • • • • The KM23C4001 is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using

Contextual Info: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES The KM 23C4200D is a fully static m ask program m able ROM >262,144 x 16 bit organization > Fast access tim e : 80ns(M ax.) >Supply voltage : single +5V > Current consumption

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D • 7^4142 KM23C4200B J D017G22 J13 CMOS MASK ROM 4M-Bit (512K X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.)

Contextual Info: KM23C4000B CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES • • • • • • • • • GENERAL DESCRIPTION 524,288 x 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption Operating: 50mA (max.) Standby: 50ftA (max.)

Contextual Info: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000D(E)TY is a fully static mask programmable ROM organized 524,288 x 8bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all

Contextual Info: KM23C4000H G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000H is a fully static mask programmable ROM organized 524,288 x 8 brt. It Is fabricated using sillcon-gate CMOS process technology. • • •

mask rom

Contextual Info: KM23C4200D CMOS MASK ROM 4M-Bit 256KX16 CMOS MASK ROM (EPROM TYPE) FEATURES • • • • • • • • GENERAL D ESCRIPTIO N 262,144 x 16 bit organization Fast access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : SOmA(Max )

Contextual Info: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C4000D(E)TY is a fully static mask programm able • • • • 524,288 x 8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V

KM23C4001b

Abstract: mask rom TA-51
Contextual Info: KM23C4001B G CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001B is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization

KM23C16005AG

Abstract: 44TSOP2 44-TSOP2
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16

Contextual Info: KM23C4000H CMOS MASK ROM 4M-Bit 5 1 2K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 23 C 4 000 H is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 x 8 bit. It is fabricated using silicon -gate CMOS process tech nolog y

KM23C4100

Contextual Info: KM23C4100 CMOS MASK ROM 4M-BH 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption

Contextual Info: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation

Contextual Info: SAMSUNG ELECTRONICS IN C h?E D • 7^4142 KM23C4001H G D O lb ^ TQ2 CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fu lly s ta tic m ask program m able ROM organized 5 2 4 ,2 8 8 x8 bit. It is fabricated using

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D 7^145 KM23C4000H G DDlb*Jflb 354 « S M C K CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 4 0 0 0 H is a fully static mask programmable R O M organized 524,288 x 8 bit. It is fabricated u sin g

NSI150

Contextual Info: KM23C4001H CMOS MASK ROM 4M-BH 512Kx 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization

Contextual Info: SAM SUN G E L E C T R O N I C S 42E » INC B 7Tb41M2 001113b 3 H S M G K KM 23C 4000A CMOS MASK ROM ¡-v q c -B -fS 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4Q00A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using

Contextual Info: S A MS UN G E L E C T R O N I C S INC 42E D E3 7=Jb4142 G O I U S M 5 SSMGK CMOS MASK ROM KM23C4100A 4M-Bit 512Kx8/256Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization Byte Mode: 524,288 x 8 W ord M ode: 26 2,14 4x16 • Fast access tim e : 120ns (m ax.)

Contextual Info: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation

KM23C4200C15

Contextual Info: KM23C4200C C M O S M a s k ROM ELECTRONICS 4M-Bit 256KX16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 262,144 x16 bit organization • Fast access time :100ns(max.) • Supply voltage : single + 5 V • Current consumption Operating :60 mA(max.) Standby : 50 pA (max.)

Contextual Info: KM23C4000B CMOS MASK ROM 4M-Bit 512Kx 8 CMOS MASK ROM FEATURES • • • • • • • • • 524,288 x 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption Operating: 50mA (max.) Standby: 50/iA (max.) Fully static operation

KM23C4100B

Contextual Info: KM23C4100B CMOS MASK ROM 4M-Bit 512Kx 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byle Mode: 524,286 x 8 Word Mode: 26 2,14 4x1 6 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption