KM23C4001H Search Results

Contextual Info: SAMSUNG ELECTRONICS IN C h?E D • 7^4142 KM23C4001H G D O lb ^ TQ2 CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fu lly s ta tic m ask program m able ROM organized 5 2 4 ,2 8 8 x8 bit. It is fabricated using

NSI150

Contextual Info: KM23C4001H CMOS MASK ROM 4M-BH 512Kx 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization

Contextual Info: KM23C4001H G CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Fast access time: 100ns (max.) Supply voltage: single + 5V Current consumption T h e K M 2 3C 4 0 01 H is a fu lly s ta tic m a s k p ro g ra m m a b le

Contextual Info: CMOS MASK ROM KM23C4001H 4M-Bit 512Kx 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fu lly s ta tic m ask program m able ROM organized 5 2 4 ,2 8 8 x8 bit It is fabricated using silicon -gate CMOS process tech nolog y 524,288 x 8 bit organization

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC