POWER TRANSISTOR 500 VOLTS Search Results

100MIL

Abstract: FERRITE TOROID Johanson Piston Trimmer indiana general UDR-500 udr 70 F624-19 l44 transistor
Contextual Info: UDR-500 500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The UDR-500 is an internally matched, COMMON EMITTER transistor capable of providing 500 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450

PTB 20200

Contextual Info: ERICSSON ^ PTB 20200 30 Watts, 380-500 MHz Cellular Radio RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380-500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON 0 PTB 20204 1.0 Watt, 380-500 MHz RF Power Transistor Description The 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20063 150 Watts, 450 - 500 MHz RF Power Transistor Description Key Features The 20063 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 450-500 MHz frequency band. It is rated at 150 Watts minimum out­

TIC 122 Transistor

Abstract: transistor R1A
Contextual Info: ERICSSON ^ PTB 20204 1.0 Watt, 380-500 MHz RF Power Transistor D escription The E 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP

TIC55

Abstract: PTB20062 tic 55
Contextual Info: ERICSSON ^ PTB 20062 150 Watts, 450-500 MHz RF Power Transistor D escription The 20062 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 450 to 500 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications.

transistor TE 901 equivalent

Abstract: transistor TE 901 IGT6D11 IGT6E11
Contextual Info: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

IGT8D21

Abstract: IGT8E21
Contextual Info: csrifBAiMiiisro^ IGT8D21.E21 2CI AMPERES 400, 500 VOLTS EQUIV. FiDS ON = 0.145 i l Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

MJ10009

Abstract: 1N4937 2N3762 MTP3055E
Contextual Info: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,

K105 transistor

Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Contextual Info: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

55AX

Contextual Info: R.1.A.990601-HERIC 0708-500 500 Watts, 50 Volts, Pulsed Radar 600 - 750 MHz ADVANCED ISSUE GENERAL DESCRIPTION CASE OUTLINE 55AX The 0708-500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 600 - 750 MHz. The

DME 40

Contextual Info: DME 500 500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The

TPR500

Contextual Info: TPR 500 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The

Contextual Info: ERICSSON ^ PTB 20062 150 Watts, 450 - 500 MHz Cellular Radio RF Power Transistor Key Features Description • • • • The 20062 is a class AB, NPN, common emitter R F Power Transistor intended for 25 V D C operation across the 450-500 M Hz frequency band. It is rated at 150 Watts minimum out­

MR918

Abstract: ar317 MJF16010A AN-952 AM503 AN875 MUR8100 P6302 AN952 F-14E
Contextual Info: MOTOROLA SC IME D I XSTRS/R F b3b?2SM 0QCID4M5 0 | Order this data sheet by MJF16010A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA r - 3 3 ~ i/ Designer's Data Sheet MJF16010A Full Pak IMPN Silicon Power Transistor POWER TRANSISTOR 15 AM PERES 500 VOLTS 50 WATTS

940 629 MOTOROLA 113

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

D45H11 equivalent replacement

Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS

TUI-lf-9

Abstract: ATC700B392JT50X
Contextual Info: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched

N15W

Abstract: acrian 0510-50 ACRIAN 0510-50 acrian inc
Contextual Info: 0182998 ACRIAN INC T7 ACRIAN INC DE I OlöSTTfi — GENERAL T - 3 'I - DGD1E33 S m m 0510-10 DESCRIPTION 10 WATTS - 28 VOLTS 500-1ÖÖÖ? MHz The 0510-10 is a common emitter silicon power transistor providing 10 watts of CW power across a 500-1000 frequency band. Gold metallization

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS

ptb2011

Contextual Info: ERICSSON $ PTB 2011 0 50 Watts, 500-1000 MHz UHF Broadband Power Transistor Prelim inary Description Key Features The 20110 is a class AB, NPN, common emitter RF Power Tran­ sistor intended for 28 VDC operation across 500 -1000 MHz fre­ quency band. It is rated at 50 Watts minimum output power and

mrf275g

Contextual Info: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS BROADBAND

planar transformer theory

Abstract: johanson balun 868 w4-20 AN211A MRF275G VK200 rf power amplifier transistor with s-parameters
Contextual Info: Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz

ALC 655

Abstract: ALC 665 ALC 887 MRF158 VK200
Contextual Info: Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance