P6302 Search Results

P6302 Result Highlights (5)

Part	Manufacturer	Description
HIP6302CBZA	Renesas Electronics Corporation	Microprocessor CORE Voltage Regulator Multiphase Buck PWM Controller, SOICN, /Tube
HIP6302CBZA-T	Renesas Electronics Corporation	Microprocessor CORE Voltage Regulator Multiphase Buck PWM Controller, SOICN, /Reel
HIP6302CBZ-T	Renesas Electronics Corporation	Microprocessor CORE Voltage Regulator Multiphase Buck PWM Controller, SOICN, /Reel
HIP6302EVAL1	Renesas Electronics Corporation	Evaluation Board for Multiphase Power Conversion for AMD Athlon Processors up to 35A
HIP6302CBZ	Renesas Electronics Corporation	Microprocessor CORE Voltage Regulator Multiphase Buck PWM Controller, SOICN, /Tube

P6302 Price and Stock

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Challenge Electronics CS20-01P63-02-1 SPEAKER 8OHM 1W 94.5DB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CS20-01P63-02-1	Tray	990		1	1 $3 10 $2.445 100 $2.03463 1000 $1.64046 10000 $1.625	Buy Now
Rochester Electronics LLC HIP6302CB MPU CORE VOLTAGE REGULATOR
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DigiKey	HIP6302CB	Tube			214	1 - 10 - 100 - 1000 $1.4 10000 $1.4	Buy Now
Renesas Electronics Corporation HIP6302CBZ IC REG CTRLR BUCK 16SOIC
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DigiKey	HIP6302CBZ	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	HIP6302CBZ		1,702		1	1 $2.33 10 $2.33 100 $2.19 1000 $1.98 10000 $1.98	Buy Now
Rochester Electronics LLC HIP6302VCB SWITCHING CONTROLLER
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DigiKey	HIP6302VCB	Tube			217	1 - 10 - 100 - 1000 $1.38 10000 $1.38	Buy Now
Rochester Electronics LLC HIP6302CBZA SWITCHING CONTROLLER, CURRENT/VO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HIP6302CBZA	Bulk			124	1 - 10 - 100 - 1000 $2.42 10000 $2.42	Buy Now

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P6302 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UJT 2N2646 Abstract: 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001 Text: TVS/Zener Theory and Design Considerations Handbook HBD854/D Rev. 0, Jun−2005 SCILLC, 2005 Previous Edition © 2001 as Excerpted from DL150/D “All Rights Reserved’’ http://onsemi.com 1 Technical Information, Application Notes and Articles Zener Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3	Original	PDF	HBD854/D Jun-2005 DL150/D NLAS3158/D UJT 2N2646 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001
2n3773 b2 Abstract: SDT9207 "cross reference" equivalent bu808 2SC1030 "cross reference" bd139 equivalent MJ3001 equivalent MJE371 equivalent D45H11 equivalent replacement bd433 buv20 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16018* MJW16018*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device 1.5 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for	Original	PDF	TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 2n3773 b2 SDT9207 "cross reference" equivalent bu808 2SC1030 "cross reference" bd139 equivalent MJ3001 equivalent MJE371 equivalent D45H11 equivalent replacement bd433 buv20 equivalent
2N6191 Abstract: 2N5337 IC 7403 AM503 MJE1320 MR856 P6302 Text: ON Semiconductort NPN Silicon Power Transistor MJE1320 SWITCHMODEt Series POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for line–operated SWITCHMODE	Original	PDF	MJE1320 220AB r14525 MJE1320/D 2N6191 2N5337 IC 7403 AM503 MJE1320 MR856 P6302
MJ16010 Abstract: MJ16012 p6302 IC 7403 2N6191 MJW16010 MJW16012 AM503 mj16 Text: ON Semiconductort MJ16010 SWITCHMODEt Series NPN Silicon Power Transistors MJW16010 MJ16012 * These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The	Original	PDF	MJ16010 MJW16010 MJ16012 MJ16012 MJW16012 MJ16010 MJW16010 r14525 MJ16010/D p6302 IC 7403 2N6191 AM503 mj16
orient 817b Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada	Original	PDF	DL150/D May-2001 r14525 DLD601 orient 817b UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
2N6191 Abstract: MJE1320 IC 7403 2N5337 AM503 MR856 P6302 frb21 Text: MOTOROLA Order this document by MJE1320/D SEMICONDUCTOR TECHNICAL DATA MJE1320 Designer's  Data Sheet NPN Silicon Power Transistor Switchmode Series This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for	Original	PDF	MJE1320/D* MJE1320/D 2N6191 MJE1320 IC 7403 2N5337 AM503 MR856 P6302 frb21
MTP12N10 pin configuration Abstract: PK MUR1100 MTP12N10 MTP8P10 PD-135 IC 7403 IC 7403 datasheet mjw16010a AM503 MJE210 Text: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJW16010A*  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in	Original	PDF	MJW16010A/D MJW16010A* 90nufacture MJW16010A/D* MTP12N10 pin configuration PK MUR1100 MTP12N10 MTP8P10 PD-135 IC 7403 IC 7403 datasheet mjw16010a AM503 MJE210
MTP12N10 pin configuration Abstract: IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET Text: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16110* MJW16110 *  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.	Original	PDF	MJ16110/D MJ16110* MJW16110 MJ16110/D* MTP12N10 pin configuration IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET
tc4500 Abstract: MJ16018 Text: ON Semiconductort MJ16018 * MJW16018 * NPN Silicon Power Transistors 1.5 kV SWITCHMODEt Series *Not Recommended for New Design These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are	Original	PDF	MJ16018 MJW16018 r14525 MJ16018/D tc4500 MJ16018
MR918 Abstract: MTP8P10 Motorola mr918 AM503 MJE210 MJH16006A MPF930 MTP12N10 MUR105 P6302 Text: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJH16006A  Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for	Original	PDF	MJH16006A/D MJH16006A MJH16006A/D* MR918 MTP8P10 Motorola mr918 AM503 MJE210 MJH16006A MPF930 MTP12N10 MUR105 P6302
MR918 Abstract: MJ16006A MJH16006A tektronix 475 IC 7403 MTP8P10 AM503 MJE210 MPF930 MTP12N10 Text: ON Semiconductort NPN Silicon Power Transistor MJH16006A 1 kV SWITCHMODEt Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications.	Original	PDF	MJH16006A r14525 MJH16006A/D MR918 MJ16006A MJH16006A tektronix 475 IC 7403 MTP8P10 AM503 MJE210 MPF930 MTP12N10
MJ802 EQUIVALENT Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. •	Original	PDF	MJ16110* MJW16110* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ802 EQUIVALENT 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
UJT 2N2646 specification Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have	Original	PDF	1N6373 1N6381 ICTE-36, MPTE-45) UJT 2N2646 specification GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA M JH 16006A D esigner’s Data Sheet NPN Silicon Pow er Transistor POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS 1 kV SWITCHMODE Series T hese transisto rs are d e sig n e d for h ig h -v o lta g e , h ig h -s p e e d , po w e r sw itch ing in	OCR Scan	PDF	MJH16006A/D 6006A 340D-02

MJ16010 Abstract: bi 370 transistor MJ16012 ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503 MJW16010 Text: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in	OCR Scan	PDF	MJ16010/D MJ16012 MJW16012 MJ16010 MJW16010 340F-03 O-247AE bi 370 transistor ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503
MJH16018 Abstract: baker e4 MTPSP10 P6302 a626 AM503 bt 109 transistor K1118 MJ16018 MTP8P10 Text: MOTORGLA SC XSTRS/R F 12E D I t»3b?E5M []GaS227 1 \| 7 ^ 3 3 - / S ' ' MOTOROLA r - 3 3 -/ 3 SEMICONDUCTOR TECHNICAL DATA M J16018 MJH16018 Designer's Data Sheet NPN Silicon Pow er Transistors 1.5 k V Sw itch m ode III Series These transistors are designed for high-voltage, high-speed, power switching in induc	OCR Scan	PDF	I6S98SC MJ16018 O-218AC MJH16018 MJH16018 baker e4 MTPSP10 P6302 a626 AM503 bt 109 transistor K1118 MJ16018 MTP8P10
mj16010 Abstract: MJ16012 MJ16012 MOTOROLA MJ16012 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in In d u c tiv e c irc u its w h e re fa ll tim e is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r	OCR Scan	PDF	J16010 J16012* MJ16012 MJ16010 J16012 MJW16012 AM503 P6302 MJ16012 MOTOROLA MJ16012 equivalent
p6302 Abstract: MJH16010 Text: MOTOROLA SC X STR S/R 1SE D I F b 3 b ?2 5 4 0 0 0 5 2 0 3 t. \| -7 = 3 3 -/^ T ~ & ii MJ16010 MJH16010 Ml 16012 MJH16012 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D a ta S h e e t 15 A M P E R E SW ITCH M O D E III S E R IE S NPN SILIC O N POW ER T R A N S IS TO R S	OCR Scan	PDF	MJ16010 MJH16010 MJH16012 MJ16012 JH16012 J16010 Defl10, MJ16012, MJH16010, p6302
MJH16032 Abstract: MJE16032 MJH16034 P6302 circuit 7403 u3 AM503 MJE16034 mje16 Text: MQTORCLA SC XSTRS/R F 12E 0 § b3fc,7SS4 000542=1 T \| T -3 S -I3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16032 MJ E 16034 MJH16032 MJH16034 Designer's Data Sheet IMPIM Silicon Power Transistors Switchmode III Series T h e se tra n s is to rs are d esig n e d fo r h ig h -vo ltag e, hig h -sp eed , p o w e r s w itc h in g in in d u c	OCR Scan	PDF	221a-04 tq-220ab) O-218AC MJH16032 MJE16032 MJH16034 P6302 circuit 7403 u3 AM503 MJE16034 mje16
Untitled Abstract: No abstract text available Text: GENERAL SEMICONDUCTOR 3918590 GENERAL .jír ^ TS » r i B i l ñ S T O OOOB144 S EMI CON DU CT OR General Semiconductor . Industries, Inc. 95D 02144 D 15 Am p NPN 300, 350, 400V 2N6653, 54, 55 SQ U H BEn COMPANY X G SR 15030,35,40 C 2R H IG H SPEED /H IG H PO W ER SW ITCH IN G T R A N S IS T O R S	OCR Scan	PDF	OOOB144 2N6653, P6302 7B92A 67QtiH X910-950-1942
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110* M JW 16110* D esigner’s Data Sheet NPN Silicon Power Transistors ‘ Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.	OCR Scan	PDF	MJ16110/D J16110* 340F-03 O-247AE
2N6654 Abstract: 2N66S5 P6302 2N6655 2n6653 XGSR15040-I Text: ^ % ^ General Semiconductor . Industries, Inc. 15 A m p N P N 300. 350. 40 0 V 2 N 6 6 5 3 , 54, 55 XG S R 1 5030. 35. 40 X G S R 1 5 0 3 0 - I . 35-I. 40-I C 2R H IG H S P E E D /H IG H POW ER S W IT C H IN G T R A N S IS T O R S The XGSR series is an NPN double diffused epitaxial transistor designed for high speed switching	OCR Scan	PDF	P6302 AM503 2N6654 2N66S5 2N6655 2n6653 XGSR15040-I
AMs03 Abstract: BU1008AF C4815 BU1008ADF p6302 AM503 AN1040 BU100 Text: MOTOROLA SC XSTRS/R F 4bE D b3b72SM QDS37Ô3 2 noTb Order this data sheet by BU1008AF/D MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BU1008AF BU1008ADF Full Pak NPN Silicon Power Transistors Horizontal Deflection . . . specifically designed fo r use in large screen color T V deflection circuits o peratin g at	OCR Scan	PDF	BU1008AF/D O-218 AN1040. BU1008AF BU1008ADF AMs03 BU1008AF C4815 p6302 AM503 AN1040 BU100
P6302 Abstract: transistor equivalent table TL 3849 AN952 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A* Designer’s Data Sheet M otoroii P rtfe rrtd D avtc NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for	OCR Scan	PDF	MJW16010A* AN951) MUR105 MUR1100 MUR405 MUR4100 AR131) P6302 transistor equivalent table TL 3849 AN952

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P6302 Search Results

P6302 Result Highlights (5)

P6302 Price and Stock

Challenge Electronics CS20-01P63-02-1

Rochester Electronics LLC HIP6302CB

Renesas Electronics Corporation HIP6302CBZ

Rochester Electronics LLC HIP6302VCB

Rochester Electronics LLC HIP6302CBZA

P6302 Datasheets Context Search

UJT 2N2646

2n3773 b2

2N6191

MJ16010

orient 817b

2N6191

MTP12N10 pin configuration

MTP12N10 pin configuration

tc4500

MR918

MR918

MJ802 EQUIVALENT

UJT 2N2646 specification

Untitled

MJ16010

MJH16018

mj16010

p6302

MJH16032

Untitled

Untitled

2N6654

AMs03

P6302