POWER MOSFET SPICE MODEL Search Results

SIPMOS

Abstract: siemens igbt profet igbt types SIPMOS SPICE SPICE MODELS models spice simulation Semiconductor Group igbt mosfet
Contextual Info: Simulation Models for SIPMOS Components The SIEMENS Power Semiconductor Group provides SPICE models for many MOSFET and IGBT types. Please refer to the README.TXT-file in the /LHDATAdirectory on the CD-ROM. Additional models SPICE, SABER for MOSFET, PROFET, will be available by the

IRF130

Abstract: jfet jfet cascode intersil jfet AN8610 ronan intersil JFET TO 18 IRFl30 JFET application note
Contextual Info: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated circuits. Developed by L. W. Nagel in 1973, SPICE II has become a widely available, well-understood design tool for

Contextual Info: SPICE Device Model SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

vertical JFET

Abstract: diode c23 jfet cascode AN8610 spice models P-Channel Depletion Mosfets IRF130 datasheet list of P channel power mosfet DEPLETION MOSFET Harris Semiconductor jfet
Contextual Info: Harris Semiconductor No. AN8610.1 Harris Power MOSFETs February 1994 SPICING-UP SPICE II SOFTWARE FOR POWER MOSFET MODELING Author: C.F. Wheatley, Jr., H.R. Ronan, Jr., G.M. Dolny The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated

intersil jfet

Abstract: RFP15N15
Contextual Info: A Spice-2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note October 1999 AN9209.2 Abstract Discussion An accurate power-MOSFET model is not widely available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE-2 software and

Power MOSFET Switching Waveforms A New Insight

Abstract: RFP15N15 intersil JFET
Contextual Info: A Spice-2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note October 1999 AN9209.2 Abstract Discussion An accurate power-MOSFET model is not widely available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE-2 software and

Contextual Info: SPICE Device Model SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

depletion MOSFET SPICE

Abstract: depletion MOSFET IRFZ20 Theory of Modern Electronic Semiconductor Device subcircuit with power switch new cosmos NMOS MODEL PARAMETERS SPICE
Contextual Info: APPLICATION NOTE A NEW APPROACH TO PARAMETER EXTRACTION FOR THE SPICE POWER MOSFET MODEL by M. Melito, F. Portuese ABSTRACT The increasing complexity of Power MOSFET technology and the inclusion, on the same chip, of more and more intelligence together with the power

POWER MOSFET APPLICATION NOTE

Abstract: vertical JFET AN-7506 IRF130 jfet cascode AN75 Fairchild Power MOSFET resistance control for semiconductor subcircuit diode c23 jfet spice model
Contextual Info: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note /Title AN75 6 Subect Spicng-Up pice I Softare or ower OSET odelng) Autho ) Keyords Interil orpoation, emionuctor, Cretor () DOC NFO dfark The SPICE II simulation software package is familiar to most

RFD14N05 spice

Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
Contextual Info: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance

Power MOSFET Switching Waveforms A New Insight

Abstract: jfet cascode IRF130 AN-7506 vertical JFET intersil jfet mosfet SPICE MODEL
Contextual Info: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note Title N86 bt pic-Up ce Softre r wer OST odel utho eyrds terrpoon, minctor, er ) OCI O frk The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated

mosfet SPICE MODEL

Abstract: self-heating subckt pspice high frequency mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods ronan difference between orcad pspice parallel mosfet MOSFET S1A FDP038AN08A0 PSPICE Orcad
Contextual Info: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET

1000 volt mosfet

Abstract: Power MOSFET Switching Waveforms A New Insight, H Harris Semiconductor jfet Power MOSFET Switching Waveforms A New Insight AN9209 Depletion MOSFET 20V "HIGH Power MOSFET" dual jfet MOSFET 1000 VOLTS RFP15N15
Contextual Info: Harris Semiconductor No. AN9209.1 Harris Power MOSFETs April 1994 A SPICE-2 SUBCIRCUIT REPRESENTATION FOR POWER MOSFETs, USING EMPIRICAL METHODS Author: C. Frank Wheatley Jr., and Harold R. Ronan, Jr. Abstract An accurate power-MOSFET model is not widely available

Gate Driver SOT-363 Marking Code G

Abstract: DMN601K IPC-SM-782 J-STD-020D NMSD200B01 NMSD200B01-7 SD103AWS voltage regulator sot-363 sot-363 MARKING
Contextual Info: NMSD200B01 200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE Please click here to visit our online spice models database. General Description • NMSD200B01 is best suited for switching voltage regulator and power management applications. It

Contextual Info: NMSD200B01 200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE NEW PRODUCT Please click here to visit our online spice models database. General Description • NMSD200B01 is best suited for switching voltage regulator and power management applications. It

Contextual Info: NMSD200B01 200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE NEW PRODUCT Please click here to visit our online spice models database. General Description • NMSD200B01 is best suited for switching voltage regulator and power management applications. It

AN11261

Abstract: AN11156
Contextual Info: AN11261 Using RC Thermal Models Rev. 2 — 19 May 2014 Application note Document information Info Content Keywords RC thermal, SPICE, Models, Zth, Rth, MOSFET, Power Abstract Analysis of the thermal performance of power semiconductors is necessary to efficiently and safely design any system utilizing such

AN9321

Abstract: HUFA75631SK8 HUFA75631SK8T MS-012AA TB334 109E diode
Contextual Info: HUFA75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models

AN9321

Abstract: AN9322 HUF75631SK8 HUF75631SK8T MS-012AA TB334 238e 109E diode
Contextual Info: HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models

Power MOSFET Switching Waveforms A New Insight, H

Abstract: RFP15N15 7509 AN-7509 RFP15 lateral mos JFET spice model
Contextual Info: A Spice-2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note Title N92 bt A ceubcuit pretan r wer OSTs, ng mpirl ths utho AN-7509 Abstract Discussion An accurate power-MOSFET model is not widely available for CAD circuit simulation. This work provides a subcircuit

73554

Abstract: 100W50mSReverse difference between orcad pspice ior 7923 AN609 PSPICE Orcad SI7390DP 1564465
Contextual Info: AN609 Vishay Siliconix Thermal Simulation of Power MOSFETs on the P-Spice Platform Author: Kandarp Pandya INTRODUCTION R-C thermal model parameters for Vishay power MOSFETs available under the product information menu offer a simple means to evaluate thermal behavior of the MOSFET under a defined transient operating