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Vishay Siliconix SIHB22N60ET1-GE3 MOSFET N-CH 600V 21A TO263
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DigiKey ()	SIHB22N60ET1-GE3	Cut Tape	520		1	1 $4.05 10 $2.989 100 $2.1166 1000 $2.1166 10000 $2.1166	Buy Now
	SIHB22N60ET1-GE3	Digi-Reel	520		1	1 $4.05 10 $2.989 100 $2.1166 1000 $2.1166 10000 $2.1166	Buy Now
	SIHB22N60ET1-GE3	Reel			800	1 - 10 - 100 - 1000 $1.632 10000 $1.6	Buy Now
Vishay Siliconix SIHB22N60E-E3 MOSFET N-CH 600V 21A D2PAK
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DigiKey	SIHB22N60E-E3	Tube			1,000	1 - 10 - 100 - 1000 $1.85 10000 $1.85	Buy Now
Vishay Siliconix SIHB22N60E-GE3 MOSFET N-CH 600V 21A D2PAK
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DigiKey	SIHB22N60E-GE3	Tube			1	1 $4 10 $4 100 $3.0086 1000 $2.11331 10000 $2.11331	Buy Now
Vishay Siliconix SIHB22N60EL-GE3 MOSFET N-CH 600V 21A TO263
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DigiKey	SIHB22N60EL-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $2	Buy Now
Vishay Siliconix SIHB22N60EF-GE3 MOSFET N-CH 600V 19A D2PAK
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DigiKey	SIHB22N60EF-GE3	Bulk			1	1 $2.02 10 $1.856 100 $1.7456 1000 $1.60125 10000 $1.60125	Buy Now

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SIHB22N60E Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHB22N60E-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A D2PAK		Original	PDF
SIHB22N60EF-GE3		Vishay Siliconix	MOSFET N-CH 600V 19A D2PAK		Original	PDF
SIHB22N60E-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A D2PAK		Original	PDF
SIHB22N60EL-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO263		Original	PDF
SIHB22N60ET1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO263		Original	PDF
SIHB22N60ET5-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO263		Original	PDF

SIHB22N60E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHB22N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHB22N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
s13050 Abstract: S-1305 Contextual Info: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHB22N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s13050 S-1305	PDF
Contextual Info: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)	Original	SiHB22N60E O-263) 2002/95/EC 11-Mar-11	PDF
Contextual Info: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single D D2PAK (TO-263)	Original	SiHB22N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SPICE Device Model SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiHB22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHB22N60EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHB22N60EL AN609, 7589u 6282m 6682m 0918u 03-Nov-14	PDF
D2Pak Package dimensions Contextual Info: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)	Original	SiHB22N60E O-263) 2002/95/EC 11-Mar-11 D2Pak Package dimensions	PDF
Contextual Info: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHB22N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHB22N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two	Original	SiHB22N60E 2002/95/EC O-263) 11-Mar-11	PDF
Contextual Info: SiHB22N60EL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) typ. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.171 74 Qgs (nC) 15 Qgd (nC) 15 Configuration Single Reduced figure-of-merit (FOM) Ron x Qg	Original	SiHB22N60EL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
TO-247 FULLPAK Package Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction	Original	enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E	PDF
Contextual Info: Vishay Intertechnology, Inc. Alternative Energy Solar One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy 太陽光発電 Mメインインバータ < 50 kW 4 マイクロインバータ 5	Original	VMN-MS6792-1304-AESO	PDF

MKP1848S Abstract: MKP1848S DC-Link Contextual Info: Vishay Intertechnology, Inc. Alternative Energy Solar One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy Solar Main Inverters < 50 kW 4 Micro-Inverters 5 Junction Boxes 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay	Original	VMN-MS6761-1212 MKP1848S MKP1848S DC-Link	PDF