POWER MOSFET IN A HEXDIP PACKAGE Search Results

JEDEC TO-252AA LAND PATTERN

Abstract: MO-169AB MS-012AA TO-205A
Contextual Info: Power Packages Power MOSFET Products HexDIP 4 PIN DUAL-IN-LINE PLASTIC PACKAGE E INCHES A 9o - 10o H1 D L1 L 5o - 6o 2o MAX. b1 e c M b e1 MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.194 0.198 4.93 5.02 - b 0.020 0.024 0.51 0.60 1, 2 b1 0.035 0.045 0.89

IRF09120

Abstract: IRFD9120 RFD9120 IRFD9123 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123
Contextual Info: h e o I MäSS4S2 cmaamfc, i | Data Sheet No. PD-9.331G INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER HEXFET* TRANSISTORS IO R IRFD9120 IRFD91S3 P-CHANNEL HEXDIP" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL IN-LINE PACKAGE -100 VOLT, 0.6 Ohm, 1-Watt HEXDIP

IRFD020

Abstract: oasi 10C1 IRFD022 19s7
Contextual Info: HE T D I 4ÖSS452 ^ QQdfl3ti2 *4 1 nil. _ Data Sheet No. PD-9.470A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER TO R IRFD0 2 0 IRFD0 2 2 HEXFET TRANSISTORS N-CHANNEL HEXDIP 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE FEATURES: 50 Volt, 0.10 Ohm, 1-Watt HEXDIP

IRFD9110

Abstract: A15J IRFD9113 rectifier s4 case R-1
Contextual Info: l ie o I Mös sHs a aoaama □ | Data Sheet Nó. PD-9.389F T-37-25 IN TER NA TIO NA L R E C T IF IE R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRFDS1 1 0 IRFD0 1 1 3 P-CHANNEL HEXDIP* 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

IRFD9223

Abstract: LIC HD 13 IRFD 110 JA20 irfd9220
Contextual Info: h e o I M fls s 4 s a a a a ä M ^ ö a | Data Sheet No. PD-9.439A T-37-25 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TO R HEX FET TRANSISTORS IRFDS22Q IRFD9SS3 P-CHANNEL H EXD IP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

IRF0020

Abstract: IH02 IRFD020 k 3525 MOSFET transistor 1gs 10C1 C-111 C-113 IRFD022 irf002
Contextual Info: HE D I 4ÖS5452 000â3fci2 -f" - *4 | Data Sheet No. PD-9.470A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R IRFDOSO IRFDOSS HEXFET TRANSISTORS N-CHANNEL HEXDIP’" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE 50 Volt, 0.10 Ohm, 1-Watt HEXDIP

IRFD110

Abstract: irfd113 328h IRFD11Q k 3525 MOSFET S402 FD113 fd110 IRFD110/111/112/113
Contextual Info: HE D | 4055452 QQOaBbfl S | Dgta Sheet N q p D.g 328H INTERNATIONAL R E C T IF IE R T-35-25 IN T E R N A T IO N A L R E C T IF IE R llO R l HEXFET TRANSISTORS IRFD11Q N-CHANNEL IRFD113 HEXDIP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

k 3525 MOSFET

Abstract: IRFD210 diode D213 lp11e JIS S10C high voltage rectifier diode T35 D213 DIODE C136 Power MOSFET in a HEXDIP package IRFD213
Contextual Info: HE 0 I INTERNATI ONAL 4055452 Q0Qâ3âb 7 | RECTIFIER Data Sheet No. PD-9.386E T-35-25 INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I O R IRFD21 O IRFD21 3 N-C HAIMINIEL HEXDIP" 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE 200 Volt, 1.5 Ohm, 1-Watt HEXDIP

irfd9020

Abstract: IRFD9022
Contextual Info: H E D § 4Ö55M52 0000404 S | Data gheet No pD.9.462A T-37-25 INTERNATIONAL RECTIFIER in t e r n a t io n a l r e c t i f i e r IÖ R HEXFET TRANSISTORS IR F D 9 0 2 0 P-CHANNEL ^PolRFDSOSS HEXDIP 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE

IRFD1Z3

Abstract: IRFD1Z0 TA17451 TB334
Contextual Info: IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Semiconductor 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.4A and 0.5A, 60V and 100V • Nanosecond Switching Speeds These are N-Channel enhancement mode silicon gate

irfd320

Contextual Info: H a IRFD320, IRFD321, IRFD322, IRFD323 r r i s ” “ I CONDUCTOE 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.5A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFD220

Contextual Info: IRFD220, IRFD221, IRFD222, IRFD223 S E M I C O N D U C T O R 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

TO2506

Contextual Info: X RFW2N06RLE N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors Features Package 4-PIN HEXDIP TOP VIEW • 2A.60V • rDS on = 0.160ft • UIS Rating Curve (Single Pulse) • Design Optimized For 5 Volt Gate Drive DRAIN • Can be Driven Directly from CMOS, NMOS, TTL Circuits

Contextual Info: IRFD320, IRFD321, IRFD322, IRFD323 S E M I C O N D U C T O R 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.5A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFD110

Abstract: IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91
Contextual Info: IRFD110, IRFD111, IRFD112, IRFD113 Semiconductor 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irfd310

Contextual Info: IRFD310, IRFD311, IRFD312, IRFD313 S E M I C O N D U C T O R 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.3A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFD123

Abstract: IRFD120 HARRIS IRFD120 IRFD121 IRFD122 TA17401 TB334
Contextual Info: IRFD120, IRFD121, IRFD122, IRFD123 Semiconductor 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and

IRFD010

Abstract: T3725 IRFD010 application notes LG 72A IRFDQ12 IRFD012 MO-001 Power MOSFET in a HEXDIP package MOSFET C106 F15A
Contextual Info: HE D I 4055455 QQOÔBSb Ì | T-37-25 Data Sheet No. PD-9.464A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS N-CHANNEL HEXDIP I O R IRFD0 1 0 IRFDOi 2 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE 50 Volt, 0.20 Ohm, 1-Watt HEXDIP

SiHFD9210

Contextual Info: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion

k 3525 MOSFET

Abstract: IRFD1ZO irfd1z3
Contextual Info: HE 0 I MâSS4SH 0000300 b | Data Sheet No. PD-9.380G T-35-25 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TO R HEXFET TRANSISTORS IRFD1 ZO IM-CHANNEL HEXDIP IRFD1Z3 1-WÄTT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PAGKAGE 100 Volt, 2.4 Ohm, 1-Watt HEXDIP

IRFD9110

Abstract: IRFD9113 IRFDS110
Contextual Info: H E I IN T E R N A T IO N A L M f lS S M S a 0000410 □ | Data Sheet Nô. PD-9.389F T-37-25 R E C T IF IE R IN T E R N A T IO N A L IO R R E C T IF IE R HEXFET* TRANSISTORS IRFDS1 1 Q IRFDS1 1 3 P-CHANIMEL HEXDIP 1-WATT RATED POW ER M O SFETs 4 PIN, DUAL-IN-LINE P L A S T IC PACKAGE

1RFD123

Abstract: 1RFD120
Contextual Info: HE D I MÖ55455 • 0000374 □ I ■ T-35-25 INTERNATIONAL R E C T I F I E R Data Sheet No. PD-9.385E _ INTERNATIONAL RECTIFIER HEXFET' TRANSISTORS II«R I IRFD1 SO IRFD1 S3 N-CHANNEL HEXDIP” 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

Contextual Info: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HEXDIP Dynamic dV/dt Rating Repetitive Avalanche Rated

irfd9024

Abstract: SiHFD9024
Contextual Info: SiHFD9024, IRFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion