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    IRFD320 Price and Stock

    Vishay Siliconix IRFD320PBF

    MOSFET N-CH 400V 490MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD320PBF Tube 2,713 1
    • 1 $2.59
    • 10 $1.671
    • 100 $2.59
    • 1000 $0.84765
    • 10000 $0.78686
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    Rochester Electronics LLC IRFD320

    MOSFET N-CH 400V 490MA 4HVMDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD320 Bulk 155
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    • 1000 $1.94
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    Vishay Siliconix IRFD320

    MOSFET N-CH 400V 490MA 4DIP
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    DigiKey IRFD320 Tube 2,500
    • 1 -
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    • 10000 $1.7875
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    Vishay Intertechnologies IRFD320PBF

    Trans MOSFET N-CH 400V 0.49A 4-Pin HVMDIP
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    Verical IRFD320PBF 3,814 9
    • 1 -
    • 10 $0.8245
    • 100 $0.7287
    • 1000 $0.6189
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    IRFD320PBF 2,295 15
    • 1 -
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    • 100 $0.8885
    • 1000 $0.7065
    • 10000 $0.6835
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    Arrow Electronics IRFD320PBF 3,814 8 Weeks 1
    • 1 $0.9045
    • 10 $0.8245
    • 100 $0.7287
    • 1000 $0.6189
    • 10000 $0.6189
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    IRFD320PBF 2,300 8 Weeks 1
    • 1 $1.2944
    • 10 $1.0919
    • 100 $0.886
    • 1000 $0.7045
    • 10000 $0.6816
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    Newark IRFD320PBF Bulk 2,500
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    EBV Elektronik IRFD320PBF 2,200 9 Weeks 100
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    International Rectifier IRFD320

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFD320 29
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    Quest Components IRFD320 416
    • 1 $4.5
    • 10 $4.5
    • 100 $2.775
    • 1000 $2.475
    • 10000 $2.475
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    IRFD320 64
    • 1 $3.36
    • 10 $3.36
    • 100 $1.848
    • 1000 $1.848
    • 10000 $1.848
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    IRFD320 50
    • 1 $2.1
    • 10 $2.1
    • 100 $1.26
    • 1000 $1.26
    • 10000 $1.26
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    IRFD320 12
    • 1 $2.5436
    • 10 $1.9077
    • 100 $1.9077
    • 1000 $1.9077
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    Find more IRFD320 price and stock on Findchips.com

    IRFD320 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD320 International Rectifier HEXFET Power MOSFET Original PDF
    IRFD320 International Rectifier HEXFET Power Mosfet Original PDF
    IRFD320 Intersil 0.5A, 400V, 1.800 ?, N-Channel Power MOSFET Original PDF
    IRFD320 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD320 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 490MA 4-DIP Original PDF
    IRFD320 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD320 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD320 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD320 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD320 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD320 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD320 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD320 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD320PBF International Rectifier HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=1.8 Ohm , ID=0.49A ) Original PDF
    IRFD320PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 490MA 4-DIP Original PDF
    IRFD320R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD320R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFD320R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD320 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFD320

    Abstract: TA17404 TB334
    Text: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD320 IRFD320 TA17404 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration RoHS • For Automatic Insertion


    Original     		PDF IRFD320, SiHFD320 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, SiHFD320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 400 RDS(on) (Ω) VGS = 10 V • Repetitive avalanche rated 1.8 20 Qgs (nC) 3.3 • End stackable Qgd (nC) 11 • Fast switching Configuration


    Original     		PDF IRFD320, SiHFD320 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, IRFD321, IRFD322, IRFD323 S E M I C O N D U C T O R 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.5A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFD320, IRFD321, IRFD322, IRFD323 TA17404.

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration COMPLIANT • End Stackable • Fast Switching


    Original     		PDF IRFD320, SiHFD320 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration COMPLIANT • End Stackable • Fast Switching


    Original     		PDF IRFD320, SiHFD320 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD320R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)500m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFD320R

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration RoHS • For Automatic Insertion


    Original     		PDF IRFD320, SiHFD320 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration COMPLIANT • End Stackable • Fast Switching


    Original     		PDF IRFD320, SiHFD320 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1226 IRFD320 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 1.8Ω ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD320 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFD320_RC, SiHFD320_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFD320 SiHFD320 AN609, CONFIGURA-Oct-10 0426m 8968m 4501m 6212m

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95930 IRFD320PbF • Lead-Free Document Number: 91134 10/28/04 www.vishay.com 1 IRFD320PbF Document Number: 91134 www.vishay.com 2 IRFD320PbF Document Number: 91134 www.vishay.com 3 IRFD320PbF Document Number: 91134 www.vishay.com 4 IRFD320PbF Document Number: 91134


    Original     		PDF IRFD320PbF IRFD120 IRFD120

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration COMPLIANT • End Stackable • Fast Switching


    Original     		PDF IRFD320, SiHFD320 2002/95/EC 18-Jul-08

    IRFD320

    Abstract: No abstract text available
    Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration COMPLIANT • End Stackable • Fast Switching


    Original     		PDF IRFD320, SiHFD320 2002/95/EC 18-Jul-08 IRFD320

    Untitled

    Abstract: No abstract text available
    Text: IRFD320 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)500m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFD320

    IRFD320

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD -9.1226 IRFD320 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 1.8Ω


    Original     		PDF IRFD320 IRFD320

    IRFD320

    Abstract: PN diode
    Text: PD -9.1226 IRFD320 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 1.8Ω ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD320 IRFD320 PN diode

    TOT - 4301

    Abstract: LA 4303 IRFD320 TA17404 TB334
    Text: IRFD320 Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		PDF IRFD320 TB334 TA17404. TOT - 4301 LA 4303 IRFD320 TA17404 TB334

    IRFD321

    Abstract: IRFD322 IRFD323 transistor d722 IRFD320 irf032
    Text: Standard Power MOSFETs- IRFD320, IRFD321, IRFD322, IRFD323 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 0.5 A and 0.4 A, 350 V - 400 V


    OCR Scan     		PDF IRFD320, IRFD321, IRFD322, IRFD323 92CS-33741 IRFD323 IRFD321 IRFD322 transistor d722 IRFD320 irf032

    irfd320

    Abstract: No abstract text available
    Text: H a IRFD320, IRFD321, IRFD322, IRFD323 r r i s ” “ I CONDUCTOE 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.5A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFD320, IRFD321, IRFD322, IRFD323 TA1740GE RFD322, irfd320

    FD-321

    Abstract: No abstract text available
    Text: • 43D2271 005*4125 fili ■ OR HARRIS HAS IR FD 320/321/322/323 IRFD320R/321R /322R /323R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features • Package 4 - P IN D IP 0.5A and Q.4A, 350V - 400V T O P VIE W • rDS on = 1-8H and 2 .5 fl


    OCR Scan     		PDF 43D2271 IRFD320R/321R /322R /323R IRFD320, 1RFD332, IRFD322, IRFD323 IRFD320R, IRFD332R, FD-321

    D82CQ2

    Abstract: No abstract text available
    Text: [FIT FIELD EFFECT POWER TRANSISTOR IRFD320.321 D82CQ2.Q1 0.5 AMPERES 400, 350 VOLTS RPS ON = 1-8 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF D82CQ2 00A///s, IRFD321/D82CQ1 IRFD320/D82CQ2 100ms

    Untitled

    Abstract: No abstract text available
    Text: IRFD320 S em iconductor Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1 -800i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF IRFD320 -800i2 TB334 TA17404.

    Untitled

    Abstract: No abstract text available
    Text: w vys S IRFD320, IRFD321, IRFD322, IRFD323 S e m ico n d ucto r y y 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 0.5A and 0.4A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFD320, IRFD321, IRFD322, IRFD323