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    IRFD112, Search Results

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    IRFD112, Price and Stock

    Rochester Electronics LLC IRFD112

    SMALL SIGNAL N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD112 Bulk 807
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.37
    • 10000 $0.37
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    Harris Semiconductor IRFD112

    IRFD112 - Small Signal, 0.8A, 100V, N-Channel, MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRFD112 1,371 1
    • 1 $0.3575
    • 10 $0.3575
    • 100 $0.336
    • 1000 $0.3039
    • 10000 $0.3039
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    IRFD112, Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD112 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFD112 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD112 General Electric Power MOSFET field effect power transistor. Scan PDF
    IRFD112 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD112 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD112 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD112 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD112 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD112 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD112 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD112(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD112R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD112R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFD112R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD112, Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFD113

    Abstract: IRFD112 irfd113 transistor
    Text: Fünf RELD EFFECT POWER TRANSISTOR IRFD112,113 0.3 AMPERES 100, 60 VOLTS RDS ON = 0-8 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.


    OCR Scan     		PDF IRFD112 TA-26Â 25jiS 100/iS IRFD112 IRFD113 IRFD113 irfd113 transistor

    transistor 81L

    Abstract: NER 251 IRFD112 IRFD113
    Text: SOLID !g e s o l i » STATE 01E 18902 state D 7 "“ 3 3 -_ 2 5 3fl7S0fll DDlfllGa 5 ^ _l— ' IRFD112,113 FIELD EFFECT POWER TRANSISTOR 0.8 AMPERES 100, 60 VOLTS Rd S ON = 0.8 n This series of N-Channel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology


    OCR Scan     		PDF T-35-J5 IRFD112 TA-25Â irf0112 -irfd113 RDS10N| transistor 81L NER 251 IRFD113