shery
Abstract: No abstract text available
Text: UTV0408-45 45W Psync, 470-860MHz, 32V Broadband RF Power N Channel Enhancement-Mode Lateral MOSFET The UTV0408-45 is designed for high power UHF TV transmitter applications and is capable of producing 14dB gain and 45 watt peak sync output power over an instantaneous bandwidth
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UTV0408-45
470-860MHz,
UTV0408-45
860MHz.
30dBc
55dBc
UTV0408-45F
shery
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SUTV040
Abstract: M122 SD4011
Text: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE POUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE
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SD4011
SUTV040
SD4011
SUTV040
M122
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SUTV040
Abstract: airtronic M122 SD4011
Text: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE P OUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE
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SD4011
SUTV040
SD4011
SUTV040
airtronic
M122
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Untitled
Abstract: No abstract text available
Text: SD4011 RF POWER BIPOLAR TRANSISTORS UHF TV/LINEAR APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ INTERNAL INPUT MATCHING ■ COMMON EMITTER ■ OVERLAY GEOMETRY ■ CLASS A OPERATION ■ METAL/CERAMIC PACKAGE ■ POUT = 4 W MIN. WITH 8 dB GAIN
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SD4011
SD4011
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TDA2579
Abstract: ic tda2595 TDA8432 TDA2595 860mhz rf amplifier circuit diagram monitor horizontal ic voltage video mixer circuit diagram video amplifier circuits for cctv 50MHz-300MHz cctv circuit diagram
Text: Signelics TDA8432 Computer-Controlled Deflection Processor for Video Displays Objective Specification Linear Products DESCRIPTION FEATURES The TDA8432 is an l2C bus-controlled deflection processor analog picture ge ometry processor which contains the control and drive functions of the deflec
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TDA8432
TDA8432
TC20360S
50MHz
225MHz
300MHz
TDA2579
ic tda2595
TDA2595
860mhz rf amplifier circuit diagram
monitor horizontal ic voltage
video mixer circuit diagram
video amplifier circuits for cctv
50MHz-300MHz
cctv circuit diagram
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PDF
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M122
Abstract: SD4011
Text: SD4011 RF POWER BIPOLAR TRANSISTORS UHF TV/LINEAR APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ INTERNAL INPUT MATCHING ■ COMMON EMITTER ■ OVERLAY GEOMETRY ■ CLASS A OPERATION ■ METAL/CERAMIC PACKAGE ■ POUT = 4 W MIN. WITH 8 dB GAIN
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SD4011
SD4011
M122
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860mhz rf amplifier circuit diagram
Abstract: UMTS gsm RFMD PA LTE
Text: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features -60dBc ACPR at 13dBm WCDMA 0.25W Output Power P1dB Excellent Linearity to DC Power Ratio High Gain: 17.5dB at 2.65GHz
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RFPA2089
50MHz
2700MHz
RFPA2089
OT-89
-60dBc
13dBm
65GHz
860mhz rf amplifier circuit diagram
UMTS gsm
RFMD PA LTE
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air variable capacitor
Abstract: carbon variable resistor variable capacitor 100 ohm Variable Resistor 1/4W capacitor ceramic variable RF capacitor variable Z1 SURFACE MOUNT 200B 700B SD56120
Text: SD56120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 100 W WITH 14 dB GAIN @ 860 MHz M246 epoxy sealed • BeO FREE PACKAGE
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SD56120
SD56120
TSD56120
air variable capacitor
carbon variable resistor
variable capacitor
100 ohm Variable Resistor 1/4W
capacitor ceramic variable RF
capacitor variable
Z1 SURFACE MOUNT
200B
700B
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CXE2022SR
Abstract: CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z CXE-2022Z amplifier DFN 2x2 MARKING RFMD CXE2022
Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage
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CXE-2022Z
50MHz
1000MHz
1000MHz
CXE-2022Z
CXE2022SR
CXE2022PCK-410
CXE2022SB
CXE2022SQ
CXE2022TR7
CXE2022Z
amplifier DFN 2x2
MARKING RFMD
CXE2022
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CXE-2022
Abstract: MARKING RFMD CXE-2022Z InP transistor HEMT optimum recievers 106-172 106172
Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage
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CXE-2022Z
50MHz
1000MHz
1000MHz
CXE-2022Z
CXE-2022
MARKING RFMD
InP transistor HEMT
optimum recievers
106-172
106172
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LLHB5402-0665-G
Abstract: hybrid coupler 3dB 90 hybrid coupler 3dB HYBRID SEMICONDUCTORS LLHB02
Text: SMT Hybrid Coupler 3dB 90°. The content of this specification may change without notification 09/18/08 LLHB5402-0665-G 665MHz:470~860MHz Configuration, Dimensions Schematics Out1 Out2 5.0 LLHB02 2.0 LLHB02 50 Ω Dummy Unit : mm Input Out2 Port (0 deg.)
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LLHB5402-0665-G
665MHz
860MHz)
LLHB02
LLHB5402-0665-G
hybrid coupler 3dB 90
hybrid coupler 3dB
HYBRID SEMICONDUCTORS
LLHB02
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balun 50 ohm
Abstract: 200B 700B JESD97 SD56120 TSD56120
Text: SD56120 RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100W with 14dB gain @ 860MHz ■ BeO free package Description
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SD56120
860MHz
SD56120
balun 50 ohm
200B
700B
JESD97
TSD56120
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THU35
Abstract: THU50 power 470-860mhz w THU100LI RF GAIN LTD Class A AMPLIFIER 4W 470-860MHz
Text: THU100LI 100 W Class A UHF Amplifier PDC-US/02 360mm 14.17" CPPO1 8X IN PDC-US/01 ∑ + IN 114/34 OUT 3 x THU50 114/34 PDC-U3/02 + > 100 W THU35 OUT IN 35W 114/34 4W + 35W ≤ 1.5 W ∑ OUT 4W IN 35W 114/34 4W + 470 - 860 MHz CPPO1 8X 470 - 860 MHz 26 Volts
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THU100LI
PDC-US/02
360mm
PDC-US/01
THU50
PDC-U3/02
THU35
250mm
108mm
THU35
THU50
power 470-860mhz w
THU100LI
RF GAIN LTD
Class A AMPLIFIER 4W
470-860MHz
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THU50
Abstract: 470-860mhz Power amplifier w power 470-860mhz w 45W UHF linear amplifier 470-860 470-860mhz Power amplifier
Text: THU50 50W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors whith gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.
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THU50
40W267
THU50
470-860mhz Power amplifier w
power 470-860mhz w
45W UHF
linear amplifier 470-860
470-860mhz Power amplifier
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THU35
Abstract: uhf linear amplifier module 470-860MHz
Text: THU35 35W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors with gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.
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THU35
40W267
THU35
uhf linear amplifier module
470-860MHz
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THU100C
Abstract: 40W267 470-860mhz Power amplifier w 470-860mhz Power amplifier AMPLIFIER 2 MHZ 100W transposers
Text: THU100C 100W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors with gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.
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THU100C
40W267
THU100C
470-860mhz Power amplifier w
470-860mhz Power amplifier
AMPLIFIER 2 MHZ 100W
transposers
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GaAs MESFET
Abstract: NES2527B-30 MESFET NE6500278 NEL2000 NES1821B-50 NEZ1011 NEZ1414 NEZ5964
Text: Power NEW! NES2527B-30 GaAs MESFET • 30 Watts POUT, 13.0 dB Gain • 2.1–2.7GHz Wideband Operation PCS and Cellular Base Station NEW! NES1821B-50 GaAs MESFET Wireless Local Loop and Wireless Cable MMDS • 47.0 dBm POUT @ 1.9GHz • 11.0 dB Linear Gain
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NES2527B-30
NES1821B-50
NE6500278
33dBm
NE650
NEL2000
NEZ5964
NE850
GaAs MESFET
MESFET
NEZ1011
NEZ1414
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C-100-A1
Abstract: No abstract text available
Text: f Z 7 SGS-THOMSON SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS • . ■ . ■ . ■ GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE P out = 4 W MIN. WITH 8 dB GAIN PIN CONNECTION
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SD4011
SD4011
C-100-A1
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MS1512
Abstract: No abstract text available
Text: MS1512 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 20 VOLTS CLASS A LINEAR OPERATION POUT = 1.0 WATT GP = 10.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1512 is a silicon NPN bipolar transistor designed for
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MS1512
MS1512
100mW
860MHz
-16dBc)
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1512 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 20 VOLTS CLASS A LINEAR OPERATION POUT = 1.0 WATT GP = 10.0 dB MINIMUM
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MS1512
MS1512
100mW
860MHz
-16dBc)
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1512 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 20 VOLTS CLASS A LINEAR OPERATION POUT = 1.0 WATT GP = 10.0 dB MINIMUM
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MS1512
MS1512
860MHz
-16dBc)
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Untitled
Abstract: No abstract text available
Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self
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CXE-2022Z
50MHz
1000MHz
1000MHz
CXE-2022Z
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MARKING RFMD
Abstract: CXE2022Z CXE2022SR CXE-2022Z inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7
Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self
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CXE-2022Z
50MHz
1000MHz
1000MHz
CXE-2022Z
MARKING RFMD
CXE2022Z
CXE2022SR
inp hemt low noise amplifier
CXE-2022
CXE2022PCK-410
CXE2022SB
CXE2022SQ
CXE2022TR7
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Untitled
Abstract: No abstract text available
Text: SMT Hybrid Coupler 3dB 90°. LLHB5402-0665-G 665MHz:470~860MHz Configuration, Dimensions Schematics Out1 Out2 LLHB02 2.0 4.0 5.0 LLHB02 50 Ω Dummy Unit : mm Input Out2 Port (0 deg.) GND Out1 Port (−90 deg.) Termination GND Input Port Specification Style No.
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LLHB5402-0665-G
665MHz
860MHz)
LLHB02
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