PG101 Search Results

API Electronics

Abstract: PG1024 DD0007 PG1018 PG1019 PG1020 PG1021 PG1022 PG1023 PG1035
Contextual Info: A P I .».3 * 0077 / E L E C T R O N I C S I NC ri m T| D 0 4 3 S c12 0 D 0 D 0 7 ? S ; I* INTERIM BULLETIN S ubject to Revision W ithout Notice -Ju ly 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN TYPE PG1018 thru PG1035, 2 A M P NPN SILICO N PLANAR POWER TRANSISTORS

PG1018

Abstract: PG1019 PG1020 PG1021 PG1022 PG1030 PG1031 PG1035 PGI023 Pirgo Electronics
Contextual Info: A P I EL ECT RO NIC S INC ' 13 1 DE | 0 0 4 B S CJS 0 D 0 0 0 7 ? S | ~ 3 *°9 7 7J - 7 ? 3 3 - 0 'f T ' - INTERIM BULLETIN S u b je c t to R e visio n W ithout Notice -July 15/ 1971 V POWER TRANSISTOR ENGINEERING BULLETIN n _ _ zo -o — I— oo TYPE PG1018 thru PG1035, 2 A M P NPN

Contextual Info: BL GALAXY ELECTRICAL PG101-PG108 VOLTAGE RANGE: 100 - 1000 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents

Contextual Info: [A F I E L E C T R O N IC S 13 Y - _ ^3 A 0 0 75f IN C DE~| aDM aS^S 0D 0007S 1 p IN T E R IM B U L LE T IN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN P I R G O E itC T R om cs inc. TYPE PG lbO l thru PG1017, 2 A M P NPN

101p1

Abstract: IC-3144
Contextual Info: DATA SHEET_ GaAs INTEGRATED CIRCUIT juPGIOOP, PG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION ¿¿PG100P and ^PG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. ¿¿PG100P is low noise amplifier from 50 MHz to 3 GHz and ¿PG101P is a medium power amplifier in the same

uPG101

Abstract: internal circuit diagram of choke G100B 101B ICL7660 mmic n5 UPG101B
Contextual Info: A r p . i CA TION NO TE APPLICATION THE WIDE BAND AM PLIFIERS /¿PG1 00B/^PG101B NOTE 1. GENERAL juPG100B/101 B is the GaAs MMIC GaAs Microwave Monolithic Integrated Circuit developed as the low noise wide band amplifier/medium power wide band amplifier.

PG101

Contextual Info: BL GALAXY ELECTRICAL PG101-PG108 VOLTAGE RANGE: 100 - 1000 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Glass passivated junction Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol

Contextual Info: DATA SHEET_ GaAs INTEGRATED CIRCUIT / / P G 1 B , / / P G 1 1 B WIDE-BAND AMPLIFIER The //PG100B and ¡PG101B are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. The //PG100B is low noise am plifier from 50 MHz to 3 GHz and //PG101B is a medium power am plifier in the

PG1010R

Contextual Info: DATA SHEET PG100R~PG1010R GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes DO-41 Unit: inch mm FEATURES • High current capability. • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.

PG2020

Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6

Contextual Info: KODENSHI CORP • 524 aboa 2SE D 0000271 i ■ DIMENSIONS P G - IO Itix V H, m t n t 7 * h * - - y > h > * r a - ¥ i a ± l = £ # L f c i B * f f l < 7 )& # fK 7 * b t e > t T \ Unit; mm) to The PG-101 reflective sensor combines GaAs IRED and high-output power photodarlington in a miniature 3-terminal

MC-7847

Abstract: MC-7847-AZ
Contextual Info: DATA SHEET GaAs MULTI-CHIP MODULE MC-7847 870 MHz CATV 25 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7847 is a GaAs Multi-chip Module designed for use in CATV applications up to 870 MHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.

SN0608098-GP

Abstract: BQ24745RHDR-GP lcd 15.4 inverter EPSON C691 MAIN AMD RS780 tps51125 MEC5035 foxconn TPS51117PWR-GP BCM5761
Contextual Info: 5 4 3 2 1 FOOSE UMA Schematics Document AMD 15.4" D D AMD Giffin CPU S1G2 AMD RS780 +SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation

si7738

Contextual Info: Application Note 1628 Author: Jiong Huang ISL6726EVAL1Z Current Mode Active Clamp Forward with SR for Medium Power Applications Description Key Features The ISL6726EVAL1Z board is a 48V input to 5V output DC/DC converter that can output current up to 40A. This application

HS350

Abstract: VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

marking g2j

Abstract: HS350 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

SW SPDT 6pin

Abstract: HS350 VP215 PG10191EJ02V0DS
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion

4H11

Contextual Info: HfM Æ H H Y B R ID A SSEM BLIES LUÍ1EX O P T O / C O M P O N E N T S INC 41E I • D Sblbll3 0000072 yj 2 ■ PHO TO INTERRUPTERS DUST PROOF TYPE (Ta=250 Absolute Maximum Ratings SG-23FL ,4h lF(mA) 11/1^ V r (V) Pp (m W ) VcectfV) IcfrnAi Pc(m W ) 100

pg2010

Abstract: PG1083 PG2020 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG2001
Contextual Info: Linear hFE from 10 mA to 2 amps Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi.„,i to 160 volts 'M h '.4 M T O —46 T O —46 T O —4 6 T O —4 6 T O —46 T O —4 6 S iîS $*‘v>

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

SW SPDT 6pin

Abstract: HS350 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HS350

Abstract: VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid