PG1021 Search Results

Contextual Info: Caulkmaster 12 oz Semco Type Retainer KDS120R Product Details Catalog No. 102120 UPC Code 037103173478 Fits Tool s PG102120 Specification Size=12 oz./Semco 1 Packaging Industrial Bag Literature Caulkmaster_bro_55157.pdf Low Res. 102120_100.jpg Image High Res.

PG2020

Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

pg2010

Abstract: PG1083 PG2020 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG2001
Contextual Info: Linear hFE from 10 mA to 2 amps Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi.„,i to 160 volts 'M h '.4 M T O —46 T O —46 T O —4 6 T O —4 6 T O —46 T O —4 6 S iîS $*‘v>

SW SPDT 6pin

Abstract: HS350 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

VP215

Abstract: HS350
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

HS350

Abstract: VP215 SW SPDT 6pin
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

API Electronics

Abstract: PG1024 DD0007 PG1018 PG1019 PG1020 PG1021 PG1022 PG1023 PG1035
Contextual Info: A P I .».3 * 0077 / E L E C T R O N I C S I NC ri m T| D 0 4 3 S c12 0 D 0 D 0 7 ? S ; I* INTERIM BULLETIN S ubject to Revision W ithout Notice -Ju ly 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN TYPE PG1018 thru PG1035, 2 A M P NPN SILICO N PLANAR POWER TRANSISTORS

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TK L-BAND SPDT SWITCH DESCRIPTION The µPG2012TK is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

HS350

Abstract: VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2008TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2008TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

SW SPDT 6pin

Abstract: HS350 VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2008TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2008TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

PG1018

Abstract: PG1019 PG1020 PG1021 PG1022 PG1030 PG1031 PG1035 PGI023 Pirgo Electronics
Contextual Info: A P I EL ECT RO NIC S INC ' 13 1 DE | 0 0 4 B S CJS 0 D 0 0 0 7 ? S | ~ 3 *°9 7 7J - 7 ? 3 3 - 0 'f T ' - INTERIM BULLETIN S u b je c t to R e visio n W ithout Notice -July 15/ 1971 V POWER TRANSISTOR ENGINEERING BULLETIN n _ _ zo -o — I— oo TYPE PG1018 thru PG1035, 2 A M P NPN

pg2004

Abstract: PG2011 pg2001 PG2006
Contextual Info: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE

NE38018 V68

Abstract: NE38018 s2p NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215 NEC 703 NEC K 2500
Contextual Info: DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES • Super Low noise figure & High Associated Gain NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) TYP. @ f = 2 GHz

HS350

Abstract: VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2008TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2008TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

HS350

Abstract: VP215 uPG2012TK
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

NE38018 V68

Abstract: NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

SW SPDT 6pin

Abstract: HS350 VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TK L-BAND SPDT SWITCH DESCRIPTION The µPG2012TK is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TK L-BAND SPDT SWITCH DESCRIPTION The µPG2012TK is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

PG2012TK-E2

Abstract: Marking g3h
Contextual Info: GaAs INTEGRATED CIRCUIT PG2012TK L-BAND SPDT SWITCH DESCRIPTION The PG2012TK is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

HS350

Abstract: VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TK L-BAND SPDT SWITCH DESCRIPTION The µPG2012TK is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

SW SPDT 6pin

Abstract: HS350 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PG2012TB

Contextual Info: GaAs INTEGRATED CIRCUIT PG2012TB L-BAND SPDT SWITCH DESCRIPTION The PG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.