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    PCC104 Price and Stock

    Vishay Intertechnologies CPCC1040R00KE66

    Resistor, 40 Ohm, ? 10%, 10 W, Radial Leaded, Wirewound, High Power - Bulk (Alt: CPCC1040R00KE66)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CPCC1040R00KE66 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.4288
    • 10000 $0.34692
    		Buy Now

    Vishay Intertechnologies CPCC1045R00KE66

    Resistor, 45 Ohm, ? 10%, 10 W, Radial Leaded, Wirewound, High Power - Bulk (Alt: CPCC1045R00KE66)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CPCC1045R00KE66 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.4288
    • 10000 $0.34692
    		Buy Now

    Vishay Intertechnologies CPCC1041R00KE66

    Resistor, 41 Ohm, ? 10%, 10 W, Radial Leaded, Wirewound, High Power - Bulk (Alt: CPCC1041R00KE66)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CPCC1041R00KE66 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.4288
    • 10000 $0.34692
    		Buy Now

    Vishay Intertechnologies CPCC104R700KE66

    Resistor, 4.7 Ohm, ? 10%, 10 W, Radial Leaded, Wirewound, High Power - Bulk (Alt: CPCC104R700KE66)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CPCC104R700KE66 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.4544
    • 10000 $0.35868
    		Buy Now

    Vishay Intertechnologies CPCC1047R00JE66

    Resistor, 47 Ohm, ? 5%, 10 W, Radial Leaded, Wirewound, High Power - Bulk (Alt: CPCC1047R00JE66)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CPCC1047R00JE66 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.4544
    • 10000 $0.35868
    		Buy Now
    Find more PCC104 price and stock on Findchips.com

    PCC104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5.1 subwoofer printed circuit board

    Abstract: 5.1 audio amplifier board 5.1 home theatre circuit 5.1 sound system circuit board MP7720DS 5.1 Channel Audio Board MP7782DF 5.1 Channel audio amplifier 5.1 audio power amplifier 5.1 audio circuit
    Text: TM EV7720DS-7782-00D 150W Class D 5.1 Channel Audio Board The Future of Analog IC Technology TM EVALUATION BOARD GENERAL DESCRIPTION FEATURES The EV7720DS-7782-00D is an evaluation board for using MPS’ Class D Audio Amplifiers in 5.1 Surround Sound systems. The board has


    Original     		PDF EV7720DS-7782-00D EV7720DS-7782-00D MP7720DS) MP7782) 5.1 subwoofer printed circuit board 5.1 audio amplifier board 5.1 home theatre circuit 5.1 sound system circuit board MP7720DS 5.1 Channel Audio Board MP7782DF 5.1 Channel audio amplifier 5.1 audio power amplifier 5.1 audio circuit

    BCP56

    Abstract: LM7805 PTFA190451E PTFA190451F RO4350
    Text: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,


    Original     		PDF PTFA190451E PTFA190451F PTFA190451E PTFA190451F 45-watt, H-36265-2 H-37265-2 BCP56 LM7805 RO4350

    c2068

    Abstract: PCC330CGTR-ND Panduit bjt ce amplifier RF2903 kct1100
    Text: RF2903               • Spread Spectrum Systems • Dual Mode Digital/Analog Receivers • Dual-IF Strip for PCS and 2.4 GHz ISM • POS Terminals • Commercial Handheld Systems Band Receivers     .157


    Original     		PDF RF2903 AMPLI0701-881 RF2903PCBA, 1000pF 100pF 330pF 100nH MPSS100-3C c2068 PCC330CGTR-ND Panduit bjt ce amplifier RF2903 kct1100

    LM7805 smd

    Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
    Text: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF081301E PTF081301F PTF081301E PTF081301F 130-watt, LM7805 smd BCP56 LM7805 transistor SMD LOA DD 127 D TRANSISTOR

    transistor di 960

    Abstract: No abstract text available
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-34288-2 transistor di 960

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242

    LM7805

    Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PDF PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt LM7805 elna 50v BCP56 RO4350

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M
    Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF210101M PTF210101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805

    LM7805 smd 8 pin

    Abstract: smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 PTF080101M smd transistor marking C14
    Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF080101M PTF080101M 10-watt PG-RFP-10 LM7805 smd 8 pin smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 smd transistor marking C14

    BCP56

    Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
    Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PDF PTFA091201GL PTFA091201HL PTFA091201GL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 BCP56 LM7805 A0912

    200B

    Abstract: BCP56 LM7805 PTFA211001E infineon gold P2KECT-ND
    Text: PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA211001E PTFA211001E 100-watt, H-30248-2 200B BCP56 LM7805 infineon gold P2KECT-ND

    ssy 1920

    Abstract: LM 2931 AT 05 BCP56 LM7805 PTFA191001E PTFA191001F
    Text: PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA,


    Original     		PDF PTFA191001E PTFA191001F PTFA191001E PTFA191001F 100-watt, IS-95 CDMA2000 H-36248-2 ssy 1920 LM 2931 AT 05 BCP56 LM7805

    LM7805

    Abstract: elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 PTFA181001GL ELNA capacitor 100 uf 50v
    Text: Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the


    Original     		PDF PTFA181001GL PTFA181001HL PTFA181001GL 100-watt LM7805 elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 ELNA capacitor 100 uf 50v

    Unitrode DN-95

    Abstract: TAJD107M016 100uF 16V tantalum capacitor 1206 smd led mosfet short circuit protection schematic diagram smd 01 hot UCC3919 UCC3919PW P150FCT-ND DN-95
    Text: DN-95 Design Note UCC3919 Hot Swap Power Manager Evaluation Circuit and List of Materials By Robert B. Diener • On-board 0.01Ω, 1W sense resistor • Choice of manual or automatic reset modes • Choice of 3% duty cycle current limiting or INTRODUCTION


    Original     		PDF DN-95 UCC3919 Unitrode DN-95 TAJD107M016 100uF 16V tantalum capacitor 1206 smd led mosfet short circuit protection schematic diagram smd 01 hot UCC3919PW P150FCT-ND DN-95

    A26267-ND

    Abstract: programming smt machine SHRD PCC104bct-nd HDR jumper PCC104BCTND nec mcu Connector HDR vert 2 pin K232 PCC330CGCTND
    Text: User’s Manual K0RE81 Evaluation Platform for µPD78F9882 Microcontroller April 2003. NEC Electronics America, Inc. Printed in USA. All rights reserved. Document no. U16693EU1V0UM00 K0RE81 Evaluation Platform for µPD78F9882 2 K0RE81 Evaluation Platform for µPD78F9882


    Original     		PDF K0RE81 PD78F9882 U16693EU1V0UM00 K0RE81 PD78F9882 K0RE81. A26267-ND programming smt machine SHRD PCC104bct-nd HDR jumper PCC104BCTND nec mcu Connector HDR vert 2 pin K232 PCC330CGCTND

    ATC-600A

    Abstract: BCP56 LM7805 PTFA212001E PTFA212001F RO4350
    Text: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2 ATC-600A BCP56 LM7805 RO4350

    a2324

    Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
    Text: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,


    Original     		PDF PTFA192401E PTFA192401F PTFA192401E PTFA192401F 240-watt H-36260-2 H-37260-2 a2324 RF35 RO4350 BCP56 LM7805 PTFA192401F V4

    Untitled

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091503EL PTFA091503EL 150-watt, H-33288-6

    Untitled

    Abstract: No abstract text available
    Text: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PDF PTFA091201E PTFA091201F PTFA091201E PTFA091201F 120-watt H-36248-2 H-37248-2

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PDF PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239

    PCC104BTR-ND

    Abstract: attenuator 10db conn sd RF2421 RF2421PCBA VG10 MPSS100-3C
    Text: R F E RF2421 Ü M ICRO-DEVICES 10dB SWITCHED ATTENUATOR T y p ic a l A p p lic a tio n s • Power Control in Communication Systems • Commercial and Consumer Systems • CMOS Compatible Programmable • Portable Battery Powered Equipment Attenuator P ro d u c t D e s c rip tio n


    OCR Scan     		PDF RF2421 RF2421 16dBm. RF2421PCBA PCC104BTR-ND PCC101CGTR-ND 100pF MPSS100-3-C attenuator 10db conn sd RF2421PCBA VG10 MPSS100-3C

    Untitled

    Abstract: No abstract text available
    Text: R F MICRO’DEVICES RF2312 LINEAR GENERAL PURPOSE AM PLIFIER • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations LINEAR CATV AMPLIFIERS T y p ic a l A p p lic a tio n s


    OCR Scan     		PDF RF2312 RF2312 1000MHz, includ2312410

    PM554

    Abstract: LT1066 3004 IC 74HC273 scr c20d PM5101 pc motherboard schematics 432F
    Text: STANDARD PRODUCT PM I PMC-Sierra, Inc. I T# I V h ISSUE 2 PM5543 SARD SONET/SDH 155Mbit/s ADM Reference Desist PM5543 A D M 155 REF SONET/SDH 155 Mbit/s ADD /DRO P MU LT IP LE X OR WITH SINGLE MODE OPTICAL INTERFACE R E F E R E N C E DESIGN SARD I s s ue 2: Jul y, 1 996


    OCR Scan     		PDF PM5543 155Mbit/s PMC-951036 PM554 LT1066 3004 IC 74HC273 scr c20d PM5101 pc motherboard schematics 432F