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    TL111 Price and Stock

    NXP Semiconductors PCF85063ATL-1,118

    IC RTC CLK/CALENDAR I2C 10DFN
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    DigiKey PCF85063ATL-1,118 Digi-Reel 29,971 1
    • 1 $0.77
    • 10 $0.552
    • 100 $0.4352
    • 1000 $0.37391
    • 10000 $0.37391
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    PCF85063ATL-1,118 Cut Tape 29,971 1
    • 1 $0.77
    • 10 $0.552
    • 100 $0.4352
    • 1000 $0.37391
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    PCF85063ATL-1,118 Reel 28,000 4,000
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    • 10000 $0.34407
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    NXP Semiconductors PCF85063BTL-1,118

    IC RTC CLK/CALENDAR SPI 10DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PCF85063BTL-1,118 Cut Tape 19,685 1
    • 1 $0.82
    • 10 $0.587
    • 100 $0.4639
    • 1000 $0.39914
    • 10000 $0.39914
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    PCF85063BTL-1,118 Digi-Reel 19,685 1
    • 1 $0.82
    • 10 $0.587
    • 100 $0.4639
    • 1000 $0.39914
    • 10000 $0.39914
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    PCF85063BTL-1,118 Reel 16,000 4,000
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    • 10000 $0.33605
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    CW Industries CRTL111A125V1M9

    SWITCH ROCKER DPST 20A 125V
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    DigiKey CRTL111A125V1M9 Bulk 59 1
    • 1 $11.57
    • 10 $9.984
    • 100 $8.6112
    • 1000 $7.42062
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    Mouser Electronics CRTL111A125V1M9
    • 1 $11.36
    • 10 $10.24
    • 100 $8.95
    • 1000 $7.5
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    Sager CRTL111A125V1M9 1
    • 1 $9.16
    • 10 $9.16
    • 100 $8.85
    • 1000 $6.08
    • 10000 $3.11
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    CW Industries CRTL111A125V3M9

    SWITCH ROCKER DPST 20A 125V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CRTL111A125V3M9 Bulk 16 1
    • 1 $11.57
    • 10 $9.984
    • 100 $8.6112
    • 1000 $7.42062
    • 10000 $7.42062
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    Mouser Electronics CRTL111A125V3M9
    • 1 $11.36
    • 10 $10.24
    • 100 $8.95
    • 1000 $7.5
    • 10000 $7.5
    		Get Quote

    Honeywell Sensing and Control 4TL11-10

    SWITCH TOGGLE 4PDT 15A 125V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 4TL11-10 Bulk 50
    • 1 -
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    • 100 $102.588
    • 1000 $102.588
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    RS 4TL11-10 Bulk 60 Weeks 50
    • 1 -
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    • 100 $161.22
    • 1000 $161.22
    • 10000 $161.22
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    Master Electronics 4TL11-10
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    • 100 $104.73
    • 1000 $104.73
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    Find more TL111 price and stock on Findchips.com

    TL111 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TL111J Texas Instruments JFET Input Differential Comparators with Strobes Original PDF
    TL111JG Texas Instruments JFET Input Differential Comparators with Strobes Original PDF
    TL111N Texas Instruments JFET Input Differential Comparators with Strobes Original PDF
    TL111P Texas Instruments JFET Input Differential Comparators with Strobes Original PDF

    TL111 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TL311

    Abstract: tl111 LM111 LM311 LM311 and applications
    Text: TYPES TL111, TL311, TL311A JF E T- IN PU T DIFFERENTIAL COMPARATORS W IT H STROBES LINEAR INTEGRATED CIRCUITS B U L L E T IN N O . D L -S 1 2 7 3 7 , N O V E M B E R Strobe Capability Common-Mode Input Voltage Range Includes V c C — Designed to Replace LM 111 and LM 311


    OCR Scan     		TL111, TL311, TL311A LM111 LM311 TL311 tl111 LM311 LM311 and applications PDF

    TL311

    Abstract: LM311
    Text: TYPES TL111, TL311, TL311A JFET-INPUT DIFFERENTIAL C OM P A R A T O R S WITH STROB ES LINEAR INTEGRATED CI RCUITS _ B U L L E T IN N O . D L -S 12737, N O V E M B E R 1979 • • Fast Response Times • Strobe Capability • Designed to Replace LM111 and LM311


    OCR Scan     		TL111, TL311, TL311A LM111 LM311 TL311 LM311 PDF

    MIDCOM 671-8001

    Abstract: MIDCOM 671-8005 T2112 671-8001 TTC 104 TTPC-06 TTC 103 TH2104 T9317 TL1114
    Text: TELECOMMUNICATIONS TRANSFORMERSFCC PART 68 /s* F ile N o . L R 8 1 3 8 3 142035 ' m MICROTRAN. International, cou plin g, h ybrid, voice, V.32 & V.34 data ap plication s. ST A N D A R D T E L E C O M M U N IC A T IO N S T R A N S F O R M E R S vir*v. T2316


    OCR Scan     		T2316 T2110 TH2104 TH2106 TTC-105 TTC-108 TTC-11Ü TTC-112 TTC-13 MIDCOM 671-8001 MIDCOM 671-8005 T2112 671-8001 TTC 104 TTPC-06 TTC 103 T9317 TL1114 PDF

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


    Original     		PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147 PDF

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND PDF

    TL1 series

    Abstract: TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07
    Text: TL1 Series Toroids C 1 F D 2 B A E 2E COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D .29 .325 .415 .475 .625


    Original     		TL1-18 TL1-19 TL1-16 TL1-17 TL1-12 TL1 series TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07 PDF

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 PDF

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242 PDF

    TL235

    Abstract: No abstract text available
    Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency


    Original     		PTVA030121EA PTVA030121EA H-36265-2 TL235 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PTFA091503EL PTFA091503EL 150-watt, H-33288-6 PDF

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1 PDF

    C109 ceramic capacitor

    Abstract: TL235
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235 PDF

    PTFB212507SH

    Abstract: No abstract text available
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB212507SH PTFB212507SH 200-watt PDF

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239 PDF

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2 PDF

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 PDF

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 PDF

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152 PDF

    fet 4712

    Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT
    Text: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990


    Original     		PTFB193404F PTFB193404F 340-watt H-37275-6/2 P03-A, fet 4712 NFM18PS105R0J30 LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT PDF

    Untitled

    Abstract: No abstract text available
    Text: CY54/74FCT2374T CY54/74FCT2574T 8-Bit Registers Features • • Function and pinout com p atib le with FCT and F logic • 25Q output series resistors to reduce tran sm ission line reflection noise • FCT-C speed at 5.2 n s m ax. C orn i FCT-A speed at 6.5 n s max. (C om ’lj


    OCR Scan     		CY54/74FCT2374T CY54/74FCT2574T 20-Pin 300-M PDF

    TL225

    Abstract: ATC100A6R2CW150X
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X PDF

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 PDF

    TRANSISTOR tl131

    Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
    Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


    Original     		PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA PDF

    hy 1418

    Abstract: tl117 tl111
    Text: TL1 Series Toroids 1 C F E 2E 2 D A B COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D E TYPICAL .110 .150 .150


    Original     		TL1-01 TL1-02 TL1-03 TL1-04 TL1-05 TL1-06 TL1-07 TL1-08 TL1-09 TL1-10 hy 1418 tl117 tl111 PDF