NY MAKING TRANSISTOR Search Results

sot883

Abstract: CET3904E CET3906E
Contextual Info: News Release Released – November 19, 2008 145 Adams Avenue Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 Contact: Tom Donofrio Email: tdonofrio@centralsemi.com www.centralsemi.com For Immediate Release Central Semiconductor’s Low VCE(SAT) Transistors

transistor 80505

Contextual Info: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4715-1.3 ITS60F06 POWERLINE N-CHANNEL IGBT The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

transistor 80505

Abstract: POWER BIPOLAR JUNCTION TRANSISTOR transistor 80505
Contextual Info: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4712-1.3 ITS13F06 POWERLINE N-CHANNEL IGBT The ITS13F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: Si GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4719-2.2 ITS35F12 POWERLINE N-CHANNEL IGBT The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

transistor bra 44

Contextual Info: S i GEC P L ES SE Y SEPTEM BERS ADVANCE INFORMATION S E M I C O N D U C T O R S DS4718-2.2 ITS25F12 POWERLINE N-CHANNEL IGBT The ITS25F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S D S4711-2.3 ITS08F06 POWERLINE N-CHANNEL IGBT The ITS08F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4717-2.2 ITS15F12 POWERLINE N-CHANNEL IGBT The ITS15F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

DS4713-2

Contextual Info: 3Ë GEC P L E S S E Y SEPTEMBER 1997 SEMICONDUCTORS ADVANCE INFORMATION DS4713-2.2 ITS23F06 POWERLINE N-CHANNEL IGBT The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4682-3.3 ITS40F06 POWERLINE N-CHANNEL IGBT The ITS40F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

2sd1805a

Abstract: 2SD1805
Contextual Info: SA NY O S E M I C O N D U C T O R CORP 7 T T 7 0 7 ta G 0 0 7 5 4 ci T 2SE D T-33-0 2SD1805 7 # * NPN Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications ansa Applications . Strobes, voltage regulators, relay drivers, lamp drivers

Contextual Info: GLOSSARY OF TERMS AND DEFINITIONS Knurl - A vertical serration machined around the diameter of an interconnect pin providing a retention feature for press-fitting in a P.C. board or insulator and also prevents rotation of the pin. LCP Liquid Crystal Polymer - 30 % glass filled

single phase half bridge inverter

Abstract: IGBT gate drive board fire sensor LM35 single phase IGBT based PWM inverters LEM sensor CURRENT single phase igbt based inverter 200 amps circuit board 5045-04A single phase igbt based inverter 200 amps circuit lem HA Lm35 with application note
Contextual Info: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB) discussed in this Datasheet/Applications Note provides a safe, reliable, isolated interface between control

Contextual Info: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Figure 1: BAP1551 IGBT Gate Driver Board Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB)

Contextual Info: Ultra Low Noise MMIC Ampli er PMA-545G2+ 50Ω ฀฀฀฀฀฀฀1.1฀to฀1.6฀GHz฀ The Big Deal •฀High฀Gain,฀30฀dB •฀Low฀Noise฀Figure,฀1.0฀dB •฀High฀IP3,฀34฀dBm 3mm฀x฀3mm฀MCLP฀Pkg Product Overview ฀

Contextual Info: Low Noise, High IP3 Monolithic Ampli er PMA-545G1+ 50Ω ฀฀฀฀฀฀฀0.4฀to฀2.2฀GHz฀ The Big Deal •฀High฀Gain,฀31.5฀dB •฀Low฀Noise฀Figure,฀1.0฀dB •฀High฀IP3,฀32-35฀dBm 3mm฀x฀3mm฀MCLP฀Pkg LTE Performance

Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-545+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.8 dB • Ultra High IP3 • Up to 6 GHz Product Overview 3mm x 3mm MCLP [ EIA: QFN Pkg ☛ LTE Performance Summary Performance at 1 GHz Mini-Circuits PMA-545+ is a E-PHEMT based Ultra-Low

Contextual Info: Low Noise, High IP3 Monolithic Amplifier 50Ω PMA-545G1+ 0.4 to 2.2 GHz The Big Deal • High Gain, 31.5 dB • Low Noise Figure, 1.0 dB • High IP3, 32-35 dBm 3mm x 3mm MCLP Pkg LTE Performance Product Overview Mini-Circuits PMA-545G1+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 0.4 to 2.2 GHz

PMA-545

Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-545+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.8 dB • Ultra High IP3 • Up to 6 GHz Product Overview 3mm x 3mm MCLP [ EIA: QFN Pkg ☛ LTE Performance Summary Performance at 1 GHz Mini-Circuits PMA-545+ is a E-PHEMT based Ultra-Low

Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-545G2+ 1.1 to 1.6 GHz The Big Deal • High Gain, 30 dB • Low Noise Figure, 1.0 dB • High IP3, 34 dBm 3mm x 3mm MCLP Pkg Product Overview Mini-Circuits PMA-545G2+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 1.2 to 1.6 GHz

Contextual Info: Ultra Low Noise MMIC Ampli er PMA-545+ 50Ω ฀฀฀฀฀฀฀0.05฀to฀6฀GHz฀ The Big Deal •฀Ultra฀Low฀Noise฀Figure,฀0.8 dB •฀Ultra฀High฀IP3 •฀Up฀to฀6฀GHz Product Overview 3mm฀x฀3mm฀MCLP฀[฀EIA:฀QFN ฀Pkg

transistor c 6073

Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-545G2+ 1.1 to 1.6 GHz The Big Deal • High Gain, 30 dB • Low Noise Figure, 1.0 dB • High IP3, 34 dBm 3mm x 3mm MCLP Pkg Product Overview Mini-Circuits PMA-545G2+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 1.2 to 1.6 GHz

Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-545G1+ 0.4 to 2.2 GHz The Big Deal • High Gain, 31.5 dB • Low Noise Figure, 1.0 dB • High IP3, 32-35 dBm 3mm x 3mm MCLP Pkg ☛ LTE Performance Product Overview Mini-Circuits PMA-545G1+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 0.4 to 2.2 GHz

Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-545G3+ 0.7 to 1.0 GHz The Big Deal • High Gain, 31 dB • Low Noise Figure, 0.9 dB • High IP3, 34 dBm 3mm x 3mm MCLP Pkg Product Overview Mini-Circuits PMA-545G3+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 0.7 to 1.0 GHz

Contextual Info: Low Noise, High IP3 Monolithic Amplifier 50Ω PMA-545+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.8 dB • Ultra High IP3 • Up to 6 GHz Product Overview 3mm x 3mm MCLP [ EIA: QFN Pkg ☛ LTE Performance Summary Performance at 1 GHz Mini-Circuits PMA-545+ is a E-PHEMT based Ultra-Low