IGBT Pspice
Abstract: No abstract text available
Text: ITS60F06 ITS60F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4715-2.2 DS4715-4.0 May 1999 The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium
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ITS60F06
DS4715-2
DS4715-4
ITS60F06
IGBT Pspice
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transistor 80505
Abstract: No abstract text available
Text: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4715-1.3 ITS60F06 POWERLINE N-CHANNEL IGBT The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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junei997
DS4715-1
ITS60F06
ITS60F06
transistor 80505
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DS4715-2
Abstract: pspice high frequency igbt ITS60F06P T0247 ITS60F06
Text: M ITEL S E M IC O N D U C T O R ITS60F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4715-2.2 DS4715-3.2 March 1999 Key Parameters The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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ITS60F06
DS4715-2
DS4715-3
ITS60F06
T0247
pspice high frequency igbt
ITS60F06P
T0247
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