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    pspice high frequency igbt

    Abstract: DS4713-2 ITS23F06 ITS23F06P T0247
    Contextual Info: M ITEL S E M IC O N D U C T O R ITS23F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4713-2.3 DS4713-3.2 March 1999 Key Parameters The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		ITS23F06 DS4713-2 DS4713-3 ITS23F06 T0247 pspice high frequency igbt ITS23F06P T0247 PDF

    DS4713-2

    Contextual Info: 3Ë GEC P L E S S E Y SEPTEMBER 1997 SEMICONDUCTORS ADVANCE INFORMATION DS4713-2.2 ITS23F06 POWERLINE N-CHANNEL IGBT The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		DS4713-2 ITS23F06 ITS23F06 PDF