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ITS35F12 Abstract: ITS35F12P T0247 Contextual Info: M ITEL S E M IC O N D U C T O R ITS35F12 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4719-2.3 DS4719-3.2 March 1999 Key Parameters The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for	OCR Scan	ITS35F12 DS4719-2 DS4719-3 ITS35F12 T0247 ITS35F12P T0247	PDF
Contextual Info: Si GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4719-2.2 ITS35F12 POWERLINE N-CHANNEL IGBT The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage	OCR Scan	DS4719-2 ITS35F12 ITS35F12	PDF

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ITS35F12

Abstract: ITS35F12P T0247
Contextual Info: M ITEL S E M IC O N D U C T O R ITS35F12 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4719-2.3 DS4719-3.2 March 1999 Key Parameters The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

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ITS35F12 DS4719-2 DS4719-3 ITS35F12 T0247 ITS35F12P T0247

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Contextual Info: Si GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4719-2.2 ITS35F12 POWERLINE N-CHANNEL IGBT The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

OCR Scan

DS4719-2 ITS35F12 ITS35F12

PDF