NSL 32 EQUIVALENT Search Results

NSL 32 equivalent

Abstract: HX6408
Contextual Info: Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon On Insulator SOI 0.35 µm Process (Leff = 0.28 µm) • Read/Write Cycle Times ≤ 20 ns, (3.3 V), 0 to 80°C ≤ 25 ns, (3.3 V), -55 to 125°C

NSL 32 equivalent

Abstract: HX6408
Contextual Info: HX6408 Advanced Information HX6408 512k x 8 STATIC RAM The 512K x 8 Radiation Hardened Static RAM is a high The RICMOS V low power process is a SOI CMOS performance 524,288 word x 8-bit static random access technology with an 80 Å gate oxide and a minimum

NSL 32 equivalent

Abstract: AVW smd AVW smd transistor
Contextual Info: Honeywell Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 25 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 [im Process (Left = 0.28 |im)

Contextual Info: HX6408 Advanced Information HX6408 512k x 8 STATIC RAM The 512K x 8 Radiation Hardened Static RAM is a high The RICMOS V low power process is a SOI CMOS performance 524,288 word x 8-bit static random access technology with an 80 Å gate oxide and a minimum

900198

Abstract: HX6408
Contextual Info: Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon On Insulator SOI 0.35 µm Process (Leff = 0.28 µm) • Read/Write Cycle Times ≤ 20 ns, (3.3 V), 0 to 80°C ≤ 25 ns, (3.3 V), -55 to 125°C

Contextual Info: HX6408 512K x 8 STATIC RAM The monolithic 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems

INTERPOLATOR SIN COS spi

Abstract: OBGA opto 22 form 703 DA10 DA11 G003 INTERPOLATOR 6 BITS SIN COS 512PPR din 5480 2008 NB 803
Contextual Info: iC-LNG 16-BIT OPTO ENCODER preliminary WITH SPI AND SERIAL / PARALLEL OUTPUTS Rev A1, Page 1/25 FEATURES APPLICATIONS ♦ Excellent matching and technical reliability thanks to system-on-chip design with integrated photodiodes ♦ Gray code scanning 11 digital tracks pitched at 400 µm

20 led VU meter

Abstract: 32 led VU-METER VU METER 32 led analog VU-METER audio limiter ic VU-METER NSL 32 equivalent 40 led VU-METER band Limiter QFP64
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA9610H Audio FM processor for VHS hi-fi audio Product specification Supersedes data of March 1993 File under Integrated Circuits, IC02 Philips Semiconductors 1995 Mar 21 Philips Semiconductors Product specification Audio FM processor for VHS hi-fi audio

U850

Abstract: 2057 Siemens photodiode visible light
Contextual Info: SIEMENS KOM 2057 L 3-CHIP SILICON PIN PHOTODIODE ARRAY FEATURES Package Dimensions in mm * Silicon Photodiode in Planar Technology * N-Sl Material Anode, Front Contact Cathode, Back Contact * High Reliability * High Packing Oensity * Low Noise * No Testable Degradation

32 led VU-METER

Abstract: VU METER 32 led analog audio 3 input selector analog VU-METER 20 led VU meter "rf modulator" 50 led VU meter audio limiter ic VU-METER 20 led VU meter transistor
Contextual Info: INTEGRATED CIRCUITS TDA961 OH Audio FM processor for VHS hi-fi audio Product specification Supersedes data of March 1993 File under Integrated Circuits, IC02 1995 Mar 21 Philips Semiconductors PHILIPS P H ILIPS 7110flEb O Of l T ^ b l TTS Philips Semiconductors

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD LM321 Preliminary LINEAR INTEGRATED CIRCUIT LOW POWER SINGLE OP AMP  DESCRIPTION The UTC LM321’s quiescent current is only 430µA 5V . The UTC LM321 brings performance and economy to low power systems, With a high unity gain frequency and a specified 0.4V/µs

74hc540p

Abstract: 74HC540M
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC540 Octal 3-State Inverting Buffer/Line Driver/Line Receiver J SUFFIX CERAMIC CASE 732*03 High-Performance Silicon-Gate CM OS The MC54/74HC540 is identical in pinout to the LS540. The device inputs are com patible w ith standard CMOS outputs. External pullup resistors make them com ­

74hc74a

Abstract: 74hc74am E125C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC74A J SUFFIX CERAMIC CASE 632-08 Dual D Flip-Flop w ith Set and Reset High-Perform ance Silicon-Gate CMOS N SUFFIX PLASTIC CASE 646-06 The MC54/74HC74A is identical in pinout to the LS74. The device inputs are

HX6228

Abstract: honeywell memory sram
Contextual Info: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is

Contextual Info: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is

434 289

Abstract: 54175 S085 54151 gen 24lJ IPI04LJ NA220 DTB20
Contextual Info: TGC100M MILITARY SERIES 1-/im CMOS GATE ARRAYS Release 2.0, A PR IL 1989 * AC PERFORMANCE TEST STRUCTURE Fully Characterized for M ilitary Applications — Product Fully Compliant w ith the Requirements of M IL -S T D -883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC51 2-W ide, 2-ln p u t/2-W id e, 3-lnput A N D -N O R Gates J SUFFIX CERAMIC CASE 632-08 High-Performance Silicon-Gate CM O S The MC54/74HC51 is identical in pinout to the LS51. The device inputs are com ­ patible w ith standard CMOS outputs; w ith pullup resistors, they are com patible w ith

CK1100

Abstract: 6sf7 Architecture and features of TMS320XX Ck110 AD776 74HCU04 AD680 AD712 AD776AQ F1100
Contextual Info: a FEATURES Monolithic 16-Bit Sigma-Delta ADC Third-Order Noise Shaping 96 dB Dynamic Range 90 dB SNR 16-Bit 100 kHz Output from FIR Filter 12-Bit 400 kHz Output from Comb Filter No Missing Codes <0.001 dB In-Band Ripple 16-Bit 100 kSPS Oversampling ADC AD776

SH17

Abstract: 20e23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC299 J SUFFIX CERAMIC CASE 732-03 8-B it Bidirectional Universal Shift Register w ith Parallel I/O High-Performance Silicon-Gate C M O S N SUFFIX PLASTIC CASE 738-03 The MC54/74HC299 is identical in pinout to the LS299. The device inputs are com ­

cy7c109b-15vc

Abstract: CY7C109B-15VI 109b1 cypress semiconductor cy7c109b-20zi
Contextual Info: 1CY7C1009B CY7C109B CY7C1009B 128K x 8 Static RAM Features • High speed — tAA = 12 ns • Low active power — 495 mW max. 12 ns • Low CMOS standby power — 55 mW (max.) 4 mW • 2.0V Data Retention • Automatic power-down when deselected • TTL-compatible inputs and outputs

74hc299 motorola

Contextual Info: MOTOROLA SC L 0 6 IC blE D • b3b7252 G O ^ l^ O 2&7 MOTOROLA T m SEMICONDUCTOR - H ■ L 'O TECHNICAL DATA MC54/74HC299 8 -B it B idirectional Universal S h ift Register w ith Parallel I/O High-Performance Silicon-Gate CM OS N SUFFIX PLASTIC CASE 738-03

Contextual Info: CY7C109B CY7C1009B 128K x 8 Static RAM Features put Enable OE , and three-state drivers. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O 0 through I/O 7) is then

CY7C1009B

Abstract: CY7C109B
Contextual Info: CY7C109B CY7C1009B 128K x 8 Static RAM Features put Enable OE , and three-state drivers. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O 0 through I/O 7) is then

transistor sc 308

Abstract: mje16 E16204 motorola mj transistors 221A-06 MJE16204 MJF16204 JE-16 F16204
Contextual Info: by MJF16204/D MOTOROLA SEMICONDUCTOR b 3 b ? 2 5 4 OCHBMbS M • B 0 T b T S ^ O | TECHNICAL DATA MOTOROLA SC X STR S/R F 4bE ]> MJF16204 MJE16204 SCANSWITCH NPN Bipolar Pow er Deflection Transistors For High and Very High Resolution M onitors Motorola preferred devicw