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    NPN DARLINGTON IC SCHEMATIC Search Results

    NPN DARLINGTON IC SCHEMATIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    NPN DARLINGTON IC SCHEMATIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDW42G

    Abstract: 30VDC BDW42 BDW46 BDW46G BDW47 BDW47G
    Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.


    Original     		PDF BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D 30VDC BDW42 BDW46 BDW46G BDW47

    TO-220AB transistor package

    Abstract: bdw42G
    Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.


    Original     		PDF BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D TO-220AB transistor package

    Untitled

    Abstract: No abstract text available
    Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.


    Original     		PDF BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 220AB BDW42/D

    2N6284G

    Abstract: 2N6284-D 2N6287G 2N6286G 1N5825 2N6284 2N6286 2N6287
    Text: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc −


    Original     		PDF 2N6284 2N6286, 2N6287 2N6286 2N6284/87 2N628t 2N6284/D 2N6284G 2N6284-D 2N6287G 2N6286G 1N5825 2N6284 2N6286 2N6287

    2n6284

    Abstract: No abstract text available
    Text: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc −


    Original     		PDF 2N6284 2N6286, 2N6287 2N6286 2N6284/87 2N6284/D 2n6284

    2N6282 MOTOROLA

    Abstract: 2N6282 2N6287 2n6285 1N5825 2N6283 2N6284 2N6286 MSD6100 2N6284 motorola
    Text: MOTOROLA Order this document by 2N6282/D SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc —


    Original     		PDF 2N6282/D 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 2N6282 MOTOROLA 2N6282 2N6287 2n6285 1N5825 2N6283 2N6284 2N6286 MSD6100 2N6284 motorola

    2N605

    Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224
    Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc


    Original     		PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224

    mj150* darlington mj15002

    Abstract: BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 Typ — 2N6282, 2N6283, 2N6284


    Original     		PDF 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 2N6286 mj150* darlington mj15002 BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100

    TIP140

    Abstract: tip142 TIP141 transistor tip142 MPS-U52 pnp resistor darlington TIP142 power amplifier tip142/TIP147 AMPLIFIER CIRCUIT
    Text: ON Semiconductort NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V TIP142 * PNP


    Original     		PDF TIP140 TIP141* TIP142 TIP145 TIP146 TIP147 TIP141 TIP142 transistor tip142 MPS-U52 pnp resistor darlington TIP142 power amplifier tip142/TIP147 AMPLIFIER CIRCUIT

    Untitled

    Abstract: No abstract text available
    Text: TIP140, TIP141, TIP142, NPN ; TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − • • • Min hFE = 1000 @ IC


    Original     		PDF TIP140, TIP141, TIP142, TIP145, TIP146, TIP147, TIP145 TIP146

    tip142/TIP147 AMPLIFIER CIRCUIT

    Abstract: MPS-U52 TIP142 Application Note TIP140/D tip142/147 tip141 equivalent 1N5825 MSD6100 TIP140 TIP141
    Text: ON Semiconductort NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors TIP142 * . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V PNP


    Original     		PDF TIP140 TIP141* TIP142 TIP145 TIP146 TIP147 TIP140, TIP141, tip142/TIP147 AMPLIFIER CIRCUIT MPS-U52 TIP142 Application Note TIP140/D tip142/147 tip141 equivalent 1N5825 MSD6100 TIP140 TIP141

    TIP14x

    Abstract: TIP147G 80K-40 TIP140-D tip142g TIP141G
    Text: TIP140, TIP141, TIP142, NPN ; TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − • • • Min hFE = 1000 @ IC


    Original     		PDF TIP140, TIP141, TIP142, TIP145, TIP146, TIP147, TIP145 TIP146 TIP14x TIP147G 80K-40 TIP140-D tip142g TIP141G

    TIP142 Application Note

    Abstract: TIP147 Application Note 300 watts amplifier schematics tip142/TIP147 AMPLIFIER CIRCUIT darlington TIP142 power amplifier TIP141 TIP142 TIP145 TIP142 TIP147 1N5825
    Text: ON Semiconductort NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors TIP142 * . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V PNP


    Original     		PDF TIP140 TIP141* TIP142 TIP145 TIP146 TIP147 TIP140, TIP141, TIP142 Application Note TIP147 Application Note 300 watts amplifier schematics tip142/TIP147 AMPLIFIER CIRCUIT darlington TIP142 power amplifier TIP141 TIP142 TIP145 TIP142 TIP147 1N5825

    bd775

    Abstract: 2SC7 BD779 Diode BAY 61 bd776 MDS20 BD776-778-780 BUX98A AMPLIFIER 2SD718 2sb688 schematic MJW16010
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD777 PNP BD776 BD778 BD780 * Plastic Darlington Complementary Silicon Power Transistors . . . designed for general purpose amplifier and high–speed switching applications. • High DC Current Gain hFE = 1400 Typ @ IC = 2.0 Adc


    Original     		PDF BD776 BD777, BD780 BD777 BD778 TIP73B TIP74 TIP74A bd775 2SC7 BD779 Diode BAY 61 MDS20 BD776-778-780 BUX98A AMPLIFIER 2SD718 2sb688 schematic MJW16010

    2N6286

    Abstract: 2n6284 2N6287 2N6284G 80 amp 30v npn darlington 2n6284 transistor circuit schematic
    Text: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. Features •ăHigh DC Current Gain @ IC = 10 Adc hFE = 2400 (Typ) - 2N6284


    Original     		PDF 2N6284 2N6286, 2N6287 2N6286 2N6284/87 2N6284/D 2n6284 2N6287 2N6284G 80 amp 30v npn darlington 2n6284 transistor circuit schematic

    Untitled

    Abstract: No abstract text available
    Text: TIP131, TIP132 NPN , TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original     		PDF TIP131, TIP132 TIP137 TIP131 TIP132, TIP137 O-220AB TIP131/D

    1N5825

    Abstract: 2N6283 2N6284 2N6286 2N6287 MSD6100 amplifier transistor 2N6284
    Text: ON Semiconductort NPN 2N6283 Darlington Complementary Silicon Power Transistors 2N6284 . . . designed for general−purpose amplifier and low−frequency switching applications. PNP 2N6286 • High DC Current Gain @ IC = 10 Adc − • • w hFE = 2400 Typ − 2N6284


    Original     		PDF 2N6283 2N6284 2N6286 2N6287 2N6284/D 1N5825 2N6283 2N6284 2N6286 2N6287 MSD6100 amplifier transistor 2N6284

    2N6284-D

    Abstract: 1N5825 2N6283 2N6284 2N6286 2N6287 MSD6100
    Text: ON Semiconductort NPN Darlington Complementary Silicon Power Transistors 2N6283 . . . designed for general–purpose amplifier and low–frequency switching applications. 2N6286 2N6284 PNP • High DC Current Gain @ IC = 10 Adc – • • 2N6287 hFE = 2400 Typ – 2N6284


    Original     		PDF 2N6283 2N6286 2N6284 2N6287 r14525 2N6284/D 2N6284-D 1N5825 2N6283 2N6284 2N6286 2N6287 MSD6100

    2N6282

    Abstract: No abstract text available
    Text: ON Semiconductort NPN Darlington Complementary Silicon Power Transistors 2N6282 . . . designed for general−purpose amplifier and low−frequency switching applications. 2N6284* thru • High DC Current Gain @ IC = 10 Adc — • • PNP 2N6285 hFE = 2400 Typ — 2N6282, 2N6283, 2N6284


    Original     		PDF 2N6282 2N6284* 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285

    BDW41

    Abstract: 1N5825 BDW40 BDW42 BDW46 BDW47 MSD6100
    Text: MOTOROLA Order this document by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc.


    Original     		PDF BDW42/D BDW42* BDW46 BDW47* BDW42/BDW47 220AB BDW42/D* BDW41 1N5825 BDW40 BDW42 BDW46 BDW47 MSD6100

    1N5825

    Abstract: BDW42 BDW46 BDW47 MSD6100
    Text: ON Semiconductor NPN BDW42 * Darlington Complementary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47 * • High DC Current Gain – hFE = 2500 typ.) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:


    Original     		PDF BDW42 BDW46 BDW47 BDW42/BDW47 220AB r14525 BDW42/D 1N5825 BDW42 BDW46 BDW47 MSD6100

    NTE2540

    Abstract: 600V NPN 2A
    Text: NTE2540 Silicon NPN Transistor Darlington, High Voltage Switch Features: D High DC Current Gain: hFE = 600 Min VCE = 2V, IC = 2A D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE2540 NTE2540 600V NPN 2A

    BDW45

    Abstract: 1N5825 BDW42 BDW46 BDW47 MSD6100
    Text: ON Semiconductort NPN BDW42 * Darlington Complementary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47 * • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:


    Original     		PDF BDW42 BDW46 BDW47 BDW42/BDW47 220AB r14525 BDW42/D BDW45 1N5825 BDW42 BDW46 BDW47 MSD6100

    TIP142 TRANSISTOR REPLACEMENT

    Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V


    Original     		PDF TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142