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    NPN 300 VOLTS VCE POWER TRANSISTOR Search Results

    NPN 300 VOLTS VCE POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN 300 VOLTS VCE POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MMBTA42-AU NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • NPN silicon, planar design 0.110(2.80) • Collector-emitter voltage VCE = 300V • • • • • Collector current IC = 500mA Acqire quality system certificate : TS16949


    Original     		PDF MMBTA42-AU 500mA TS16949 AEC-Q101 2011/65/EU IEC61249 OT-23, MIL-STD-750, 2013-REV

    Untitled

    Abstract: No abstract text available
    Text: MMBTA42 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • NPN silicon, planar design 0.110(2.80) • Collector-emitter voltage VCE = 300V • Collector current IC = 500mA • Lead free in comply with EU RoHS 2011/65/EU directives


    Original     		PDF MMBTA42 500mA 2011/65/EU IEC61249 OT-23, MIL-STD-750, 2013-REV

    MMBTA42

    Abstract: No abstract text available
    Text: MMBTA42 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic


    Original     		PDF MMBTA42 500mA 2002/95/EC OT-23, MIL-STD-750, MMBTA42

    TRANSISTOR a4w

    Abstract: No abstract text available
    Text: MMBTA42W NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 150 mWatts FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current I C = 500mA • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. .


    Original     		PDF MMBTA42W 500mA 2011/65/EU IEC61249 OT-323, MIL-STD-750, 2013-REV TRANSISTOR a4w

    TRANSISTOR a4w

    Abstract: marking a4w a4w transistor a4w sot a4w marking code a4w marking a4w 55
    Text: MMBTA42W NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 150 mWatts FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current I C = 500mA • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. .


    Original     		PDF MMBTA42W 500mA 2011/65/EU IEC61249 OT-323, MIL-STD-750, 2013-REV TRANSISTOR a4w marking a4w a4w transistor a4w sot a4w marking code a4w marking a4w 55

    ZTX657

    Abstract: ZTX656 DSA003772
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain % 1.6 VCE(sat) - (Volts) 1.4 1.2 IC/IB=10


    Original     		PDF ZTX656 ZTX657 100mA, ZTX657 ZTX656 DSA003772

    ZTX454

    Abstract: ZTX455
    Text: ZTX454 ZTX455 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS tf ns 900 0.4 tr ns 500 800 400 700 300 600 ts µS Switching time VCE sat - (Volts)


    Original     		PDF ZTX454 ZTX455 IC/10 150mA, 200mA, ZTX454 ZTX455

    MJD122T4G

    Abstract: TRANSISTOR MJD122
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122T4G TRANSISTOR MJD122

    sot23 1303

    Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
    Text: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers


    Original     		PDF MA4T3243 OT-23 MA4T324335 sot23 1303 IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335

    NSP5665

    Abstract: sat 1205
    Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *


    Original     		PDF 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205

    Untitled

    Abstract: No abstract text available
    Text: BDW42* − NPN, BDW46, BDW47* − PNP Preferred Device Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.


    Original     		PDF BDW42* BDW46, BDW47* BDW46 BDW42/BDW47 O-220AB BDW42 BDW47

    Untitled

    Abstract: No abstract text available
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors http://onsemi.com . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDX53B, BDX53C BDX54B, BDX54C BDX53C, O-220AB BDX53B BDX54B

    Untitled

    Abstract: No abstract text available
    Text: PNP MJ11021 (NPN) MJ11022 Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. http://onsemi.com • High dc Current Gain @ 10 Adc − • • •


    Original     		PDF MJ11021 MJ11022 MJ11022,

    BDW42G

    Abstract: 30VDC BDW42 BDW46 BDW46G BDW47 BDW47G
    Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.


    Original     		PDF BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D 30VDC BDW42 BDW46 BDW46G BDW47

    tip120tip122

    Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
    Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D tip120tip122 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127

    transistor data

    Abstract: npn transistor data CHIP transistor 348
    Text: 2N2060 Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • Matched, Dual Transistors • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N2060J • JANTX level (2N2060JX)


    Original     		PDF 2N2060 MIL-PRF-19500 2N2060J) 2N2060JX) 2N2060JV) MIL-STD-750 MIL-PRF-19500/270 transistor data npn transistor data CHIP transistor 348

    MJD127T4

    Abstract: npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125
    Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4 npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125

    828 npn

    Abstract: MPS6523
    Text: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector–Emitter Voltage


    Original     		PDF MPS6521* MPS6523 MPS6521 MPS6523 828 npn

    mj14002

    Abstract: mj14003
    Text: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors http://onsemi.com Designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • •


    Original     		PDF MJ14001 MJ14002* MJ14003* mj14002 mj14003

    SEMICOA SEMICONDUCTORS

    Abstract: 2N2060 2N2060J 2N2060JV 2N2060JX 2N2060 JAN npn transistor data MIL-STD-750 2072
    Text: 2N2060 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Matched, Dual Transistors • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2060J • JANTX level (2N2060JX)


    Original     		PDF 2N2060 MIL-PRF-19500 2N2060J) 2N2060JX) 2N2060JV) MIL-STD-750 MIL-PRF-19500/270 SEMICOA SEMICONDUCTORS 2N2060 2N2060J 2N2060JV 2N2060JX 2N2060 JAN npn transistor data MIL-STD-750 2072

    2N1016

    Abstract: 2N1015C STA3265 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E STA9760
    Text: Silicon power transistors NPN TO-61 isolated collector (contad) lc | M A X ) Il FE IC/VCE VcEO(SUS| (Min-Max Tvp e# (Volts) @ A/V) STA9760 10-200 10/4 225 STA9761 300 10-200@ 8/4 10-200@5/4 STA 9762 350 VCE|S*T| @ Ic/Ib (V <a A/A) 2@ 10/1 2 @ 8 /.8


    OCR Scan     		PDF STA9760 STAB760 STA9761 STA3265 STA3285 STA3266 STA8860 2N1016 2N1015C 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E

    21E sot

    Abstract: IC 3263 1303 SOT23
    Text: M an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • D esigned for 3-5 Volt O peration • U seable to 6 GHz in Oscillators • U seable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz


    OCR Scan     		PDF MA4T3243 MA4T324335 21E sot IC 3263 1303 SOT23

    GES5819

    Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30


    OCR Scan     		PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20S6535 100mA) MPSA20 MPSA55

    Untitled

    Abstract: No abstract text available
    Text: lAiur Data Sheet Linear Array 005152 Benefits • High-frequency performance, typical fî of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design


    OCR Scan     		PDF LA400 50AL203140 DS86-352LBC