SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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ne8004 FET
Abstract: ne800495-6 NE800495 NE8004 ne0800 NE8004956
Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S2HVS FREQUENCY CLASS A OPERATION HIGH EFFICIENCY: t]A D D ;> 35% TYP BROADBAND CAPABILITY AVAILABILITY: Chip Hermetic Package m •o PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES CO PROVEN RELIABILITY
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NE8004
NE800495-X
NE800495
E800400
gm037
ne8004 FET
ne800495-6
ne0800
NE8004956
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NE800495-4
Abstract: NE8004 NE800495-5 NE800495-7
Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES N E 800495-X S 2i>vs FR E Q U E N C Y CLASS A OPERATION HIGH EFFICIENCY: t ia d d £ 35% TYP BROADBAND CAPABILITY AVAILABILITY: C hip H e rm e tic P a c k a g e CD T3 PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES
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NE8004
800495-X
vol56
S12S21|
NE800495-4
NE800495-5
NE800495-7
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NE8004
Abstract: NE800495-4
Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S 212vs FREQUENCY . CLASS A OPERATION • HIGH EFFICIENCY: t ADD > 3 5 % T Y P • BROADBAND CAPABILITY • AVAILABILITY: Chip H erm etic Package . PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES •
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NE8004
NE800495-X
212vs
L42752S
0DLSS40
NE800495-4
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NE800495-4
Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196
Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D
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NEZ4450-15D
NEZ4450-15DD
NEZ4450-8D
NEZ4450-8DD
MEZ4450-4D
NEZ4450-4DD
MEZ5964-15D
NEZ5964-15DD
NEZ5964-8D
KEZ5964-8DD
NE800495-4
GaAs MESFET
NE900474-15
NE800400
NE8004
NE800296
NES2527-20B
NE900400
NES1417-20B
NE800196
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