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Infineon Technologies AG BSS138N-E8004 MOSFET N-CH 60V 230MA SOT23-3
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DigiKey	BSS138N-E8004	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.05214	Buy Now
NEC Electronics Group NE800495-7
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Bristol Electronics	NE800495-7		49			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NEC Electronics Group NE800495-4
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Bristol Electronics	NE800495-4		39			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NE800495-4		31			1 $90 10 $90 100 $72 1000 $72 10000 $72	Buy Now
	NE800495-4		10			1 $58.5 10 $56.25 100 $56.25 1000 $56.25 10000 $56.25	Buy Now
NEC Electronics Group NE800495-6
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Bristol Electronics	NE800495-6		21			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NEC Electronics Group NE800495-8 RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, C BAND, GALLIUM ARSENIDE, N-CHANNEL, METAL SEMICONDUCTOR FET
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Quest Components	NE800495-8		23			1 $58.5 10 $56.25 100 $54 1000 $54 10000 $54	Buy Now

NE8004 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
micro servo 9g Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	PDF	V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
NE800296 Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4 Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	PDF	AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
uPD3599 Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	PDF	X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
sc5 s dc 6v relay Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997	Original	PDF	Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
NE800296 Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	PDF	AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
ne8004 FET Abstract: ne800495-6 NE800495 NE8004 ne0800 NE8004956 Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S2HVS FREQUENCY CLASS A OPERATION HIGH EFFICIENCY: t]A D D ;> 35% TYP BROADBAND CAPABILITY AVAILABILITY: Chip Hermetic Package m •o PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES CO PROVEN RELIABILITY	OCR Scan	PDF	NE8004 NE800495-X NE800495 E800400 gm037 ne8004 FET ne800495-6 ne0800 NE8004956
NE800495-4 Abstract: NE8004 NE800495-5 NE800495-7 Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES N E 800495-X S 2i>vs FR E Q U E N C Y CLASS A OPERATION HIGH EFFICIENCY: t ia d d £ 35% TYP BROADBAND CAPABILITY AVAILABILITY: C hip H e rm e tic P a c k a g e CD T3 PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES	OCR Scan	PDF	NE8004 800495-X vol56 S12S21\| NE800495-4 NE800495-5 NE800495-7
NE8004 Abstract: NE800495-4 Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S 212vs FREQUENCY . CLASS A OPERATION • HIGH EFFICIENCY: t ADD > 3 5 % T Y P • BROADBAND CAPABILITY • AVAILABILITY: Chip H erm etic Package . PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES •	OCR Scan	PDF	NE8004 NE800495-X 212vs L42752S 0DLSS40 NE800495-4
NE8004 Abstract: NE800 DIODE 3d ND4131-3A ND4131-3D GaAs MESFET NEC 45L package diode Text: N E C/ 1SE D CALIFORNIA □427414 0001=141 fi T~01'07 NEC C-BAND POWER GaAs MESFET (2 WATTS NE8004 SERIES PHYSICAL DIMENSIONS FEATURES • HIGH SENSITIVITY (Units In mm) 3A PACKAGE* • LOW DRIVE L EV E L 4.0 MIN. - • S M A L L SIZE •— 4 4.0 MIN.	OCR Scan	PDF	b4e7414 00d1141 NE8004 b4S7414 0GDn42 NE800 DIODE 3d ND4131-3A ND4131-3D GaAs MESFET NEC 45L package diode
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	PDF	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
881-1 nec Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B Text: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S	OCR Scan	PDF	b4S7414 G001S37 NE345 NE3451600 ofSiOz/SiNs72 S22-S21S12 NE345100 NE3451600 881-1 nec NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NES1417-10B NES1723-20B
NE800495-4 Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196 Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D	OCR Scan	PDF	NEZ4450-15D NEZ4450-15DD NEZ4450-8D NEZ4450-8DD MEZ4450-4D NEZ4450-4DD MEZ5964-15D NEZ5964-15DD NEZ5964-8D KEZ5964-8DD NE800495-4 GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196